In-line lithography and etch system

ABSTRACT

The invention can provide a method of processing a wafer using Site-Dependent (S-D) processing sequences that can include S-D creation procedures, S-D evaluation procedures, and S-D transfer sequences. The S-D creation procedures can be performed using S-D processing elements, the S-D evaluation procedures can be performed using S-D evaluation elements, and S-D transfer sequences can be performed using site-dependent transfer subsystems. Site-dependent data can be stored in site-dependent libraries and/or databases.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to co-pending U.S. patent application Ser.No. 11/694,428, entitled “Method and Apparatus for Verifying asite-Dependent Wafer,” filed on even date herewith; co-pending U.S.patent application Ser. No. 11/730,284, entitled “Method and Apparatusfor Verifying a site-Dependent Procedure,” filed on even date herewith;co-pending U.S. patent application Ser. No. 11/730,341, entitled “Methodand Apparatus for Creating a site-Dependent Evaluation Library,” filedon even date herewith; co-pending U.S. patent application Ser. No.11/730,279, entitled “Method and Apparatus for Performing asite-Dependent Dual Damascene Procedure,” filed on even date herewith;and co-pending U.S. patent application Ser. No. 11/730,339, entitled“Method and Apparatus for Performing a site-Dependent Dual PatterningProcedure,” filed on even date herewith. The contents of each of theseapplications are herein incorporated by reference in their entireties.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to wafer processing, and more particularlyto improving the wafer processing using site-dependent (S-D) proceduresand subsystems.

2. Description of the Related Art

Current manufacturing methodology and factory design used for integratedcircuits require many tools located as stand-alone platforms or groupedin general areas, usually separated by 2000 feet or more. Facilities torun these tools must therefore also be widely distributed throughout thefactory. Typical functions required by these platforms are substratecoating (Adhesion, BARC, TARC, Resist, Top Coat), bake (post apply bakeand post exposure bake) imaging (exposure), metrology (overlay, criticaldimension, defect and film thickness), pre and post exposure cleaningusing in immersion processing, etch (defining the pattern in theunderling thin films) and post etch clean-up (polymer and otherbyproduct removal). Technologies targeting sub 32 nm gate lengths subwill require many of these operations to be repeated to complete asingle active layer of the semiconductor device i.e. double BARC, doubleor triple patterning, double or triple imaging, etc.

The required gate level defect density for 15 nm gate technology isgoing to be approximately 0.01/cm² at 10 nm in size per ITRS 2005roadmap. Critical dimension control will need to be about 0.6 nm(3sigma), post etch, for the gate element. No lithographic and etchprocess tool exists with these performance capabilities.

These advanced technologies will need real time, wafer-to-wafer upstreamadjustment of the process to maintain acceptable device results.Defectivity requirements will demand less movement of wafers from toolto tool within the factory as those movements add defects and factoryclean room cost.

Platforms in use today function as manufacturing “islands”. This doesnot afford the best CoO development or allow for optimum processcontrol. No 300 mm track design today can meet 300 wafers per hourthroughput as claimed possible by some exposure tool manufacturers.

SUMMARY OF THE INVENTION

The present invention provides a method of processing a wafer inreal-time using S-D processing procedures and/or S-D evaluationprocedures. In some embodiments, one or more controllers in one or moresubsystems and/or systems can be used to perform S-D processingprocedures and/or S-D evaluation procedures using real-time S-Dparameters. In addition, S-D processing procedures and/or S-Dmeasurement procedures may operate using historical data.

Other aspects of the invention will be made apparent from thedescription that follows and from the drawings appended hereto.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 shows an exemplary block diagram of a processing system inaccordance with embodiments of the invention;

FIG. 2 illustrates an exemplary flow diagram of method for processingwafers using S-D procedures in accordance with embodiments of theinvention;

FIG. 3 shows a simplified view of a wafer map in accordance withembodiments of the invention;

FIG. 4 shows a simplified block diagram of an exemplary subsystem inaccordance with embodiments of the invention;

FIG. 5 illustrates an exemplary flow diagram of a method for verifying aS-D feature, a S-D wafer, and/or a S-D procedure in accordance withembodiments of the invention;

FIG. 6 illustrates an exemplary flow diagram of a method for creating aS-D evaluation library in accordance with embodiments of the invention;

FIG. 7 illustrates an exemplary flow diagram of a method for creating aDual Damascene structure on a wafer using S-D procedures;

FIG. 8 illustrates another exemplary flow diagram for creating a S-Devaluation library; and

FIG. 9 is a block diagram of an embodiment of the present invention,which illustrates a system of modules each module containing all thenecessary equipment to process wafers.

DETAILED DESCRIPTION

The present invention provides apparatus and methods for processingwafers having a large number of semiconductor devices thereon usingSite-Dependent (S-D) procedures, sequences, and/or subsystems. Whenwafers are received, the wafers can be identified as Site-Dependent(S-D) wafers or Non-Site-Dependent (N-S-D) wafers. In variousembodiments, apparatus and methods are provided for performing S-Dtransfer sequences, for processing S-D wafers, for creating an S-Devaluation library, for performing S-D processing sequences that caninclude one or more S-D creation procedures, and/or one or more S-Devaluation procedures, for performing S-D verification procedures.

Processing systems can include S-D processing elements, S-D evaluationelements, and one or more S-D transfer subsystem coupled to one or moreof the S-D processing elements and one or more of the S-D evaluationelements. Alternatively, other configurations may be used.

One or more sites can be provided at various locations on an S-D wafer.Sites can be process-related, and one or more of the sites can be usedin S-D evaluation and/or verification procedures. S-D evaluation and/orverification procedures can be used to evaluate and/or verify S-Dtransfer sequences, S-D wafers, S-D procedures, S-D evaluationlibraries, S-D processing sequences, or specific sites used in aprocessing step, or any combination thereof.

S-D wafers can have wafer data associated with them, and the wafer datacan include real-time and historical data. The wafer data can be S-Dand/or N-S-D data. In addition, the wafer data can include confidencedata and/or risk data for the wafer. S-D wafers can have site dataassociated with them, and the site data can include the number ofrequired sites, the number of visited sites, confidence data and/or riskdata for one or more of the sites, site ranking data, transferringsequence data, or process-related data, orevaluation/verification-related data, or any combination thereof. Thewafer data can include one or more transfer sequence variables that canbe used to establish the S-D transfer sequence properties. S-D transfersequences can be changed in real-time to optimize throughput, tomaximize the use of processing elements, to maximize the use ofevaluation elements, to rework faulty wafers as soon as possible. Thewafer data can include one or more processing sequence variables thatcan be used to establish the S-D processing sequence properties. S-Dtransfer sequences can be changed in real-time to optimize throughput,to maximize the use of processing elements, to maximize the use ofevaluation elements, to rework faulty wafers as soon as possible, toavoid off-line and/or faulty elements, to transfer wafers when one ormore sites have been evaluated and/or verified.

S-D transfer and/or S-D processing sequences can also be established foreach S-D wafer using the wafer data. S-D processing sequences can beestablished based on a variety of conditions detailed herein, and S-Dtransfer sequences can be established based on a variety of conditionsdetailed herein.

S-D transfer sequences can be established based on the number of sitesrequired for each wafer, the number of wafers that require processing,the number of available S-D processing elements, and the loading datafor the S-D transfer subsystem.

S-D transfer sequences can also be established to obtain confidence datafor a first one of the required sites on a first wafer in the shortestamount of time, to obtain confidence data for one or more of therequired sites on a first wafer in the shortest amount of time, toobtain confidence data for all of the required sites on a first wafer inthe shortest amount of time, to obtain confidence data for a first oneof the required sites on one or more additional wafers in the shortestamount of time, to obtain confidence data for one or more of therequired sites on one or more additional wafers in the shortest amountof time, to obtain confidence data for all of the required sites on oneor more additional wafers in the shortest amount of time, to obtainconfidence data for a first required site on all of the wafers in afirst group in the shortest amount of time, to obtain confidence datafor one or more of the required sites on all of the wafers in a firstgroup in the shortest amount of time, or to obtain confidence data forall of the required sites on all of the wafers in a first group in theshortest amount of time, or any combination thereof.

In other embodiments, S-D transfer sequences can be established toobtain risk data for a first wafer in the shortest amount of time, toobtain risk data for one or more additional wafers in the shortestamount of time, or to obtain risk data for all of the wafers in a firstgroup in the shortest amount of time, or any combination thereof. Inaddition, transfer sequences can be established to obtain new wafer datafor a first wafer in the shortest amount of time, to obtain new waferdata for one or more additional wafers in the shortest amount of time,or to obtain new wafer data for all of the wafers in a first group inthe shortest amount of time, or any combination thereof. For example,S-D and/or N-S-D wafers can be used, S-D and/or N-S-D confidence datacan be obtained, and S-D and/or N-S-D risk data can be obtained.

In still other embodiments, S-D transfer sequences can be established toobtain risk data for a first procedure in the shortest amount of time,to obtain risk data for one or more additional procedures in theshortest amount of time, or to obtain risk data for all of theprocedures in a first group from a first library in the shortest amountof time, or any combination thereof.

In additional embodiments, S-D transfer sequences can be established toobtain first library-related data in the shortest amount of time, toobtain additional library-related data in the shortest amount of time,or to obtain all of the library-related data in a first subset of afirst library in the shortest amount of time, or any combinationthereof. For example, S-D and/or N-S-D library-related data can beobtained.

In addition, S-D transfer sequences can be established to transferwafers to one or more designated processing elements and/or evaluationelements, to one or more available processing elements and/or evaluationelements, to one or more “golden” processing elements and/or evaluationelements, to one or more low-risk processing elements and/or evaluationelements, to one or more high-confidence processing elements and/orevaluation elements. For example, S-D and/or N-S-D wafers can be used,S-D and/or N-S-D processing elements can be used, and S-D and/or N-S-Devaluation elements can be used.

In additional embodiments, when one or more processing elements and/orevaluation elements are not available, S-D transfer sequences can beestablished to use a S-D transfer subsystem to “delay” and/or “store”wafers for the shortest amount of time, or when one or more processingelements and/or evaluation elements are not available, S-D transfersequences can be established to use a S-D transfer subsystem to “delay”and/or “store” wafers for a predetermined amount of time, or when one ormore processing elements and/or evaluation elements are not available ina first subsystem, S-D transfer sequences can be established to use aS-D transfer subsystem to transfer the wafers to another subsystem inthe shortest amount of time.

S-D transfer sequences can also be established to transfer “delayed”and/or “stored” wafers to one or more processing elements and/orevaluation elements in the shortest amount of time, to one or morenewly-available processing elements and/or evaluation elements, to oneor more available processing elements and/or evaluation elements after aperiod of time, to one or more low-risk processing elements and/orevaluation elements, or to one or more high-confidence processingelements and/or evaluation elements.

In other additional embodiments, S-D transfer sequences can beestablished to transfer “delayed” and/or “stored” wafers to one or moreprocessing elements and/or evaluation elements in the shortest amount oftime, to one or more newly-available processing elements and/orevaluation elements, to one or more available processing elements and/orevaluation elements after a period of time, to one or more low-riskprocessing elements and/or evaluation elements, or to one or morehigh-confidence processing elements and/or evaluation elements.

S-D transfer sequences can be established to transfer wafers to one ormore subsystems for pre- and/or post-processing. For example, S-D waferdata such as wafer profile data, wafer thickness data, wafer temperaturedata, or optical data, or any combination thereof can be obtained duringpre- and/or post-processing. S-D transfer sequences can be establishedto transfer wafers to one or more rework subsystems in the shortestamount of time when an error occurs.

S-D transfer sequences can be established to allow wafers to continuethrough processing with at least one verified device thereon to maximizeyield, to allow operator intervention, to allow host systemintervention, or to minimize the delays caused by a scanner subsystem,or any combination thereof. Current factory systems do not include S-Dtransfer subsystems for transferring wafers and/or S-D processingsubsystems for processing wafers. In addition, current factory systemsdo not include S-D procedures for processing wafers and/or forcommunicating S-D wafer data from one subsystem to another subsystemafter the wafer is processed. S-D variations caused by a wafer processmay not be uniform across the wafer, and S-D variations can includechamber-to-chamber variations, processing times, processing chemistries,and chamber drift over time.

As feature sizes decrease below the 65 nm node accurate processingand/or measurement data becomes more important and more difficult toobtain. S-D procedures can be used to more accurately process and/ormeasure these ultra-small features. The S-D data can be compared withthe warning and/or control limits, and when a run-rule is violated, analarm can be generated, indicating a processing problem.

FIG. 1 shows an exemplary block diagram of a processing system inaccordance with embodiments of the invention. In the illustratedembodiment, processing system 100 comprises system controller 195, afirst lithography subsystem 110, a scanner subsystem 115, a secondlithography subsystem 120, a third lithography subsystem 125, a thermalprocessing subsystem 130, an inspection subsystem 135, an etchingsubsystem 140, a deposition subsystem 145, a evaluation subsystem 150,and a rework subsystem 155. Single subsystems (110, 115, 120, 125, 130,135, 140, 145, 150, and 155) are shown in the illustrated embodiment;however, multiple subsystems can also be used. For example, in someembodiments, multiple subsystems (110, 115, 120, 125, 130, 135, 140,145, 150, and 155) may be used in a processing system 100. In addition,one or more of the subsystems (110, 115, 120, 125, 130, 135, 140, 145,150, and 155) can comprise one or more processing elements that can beused to perform one or more processes.

The system controller 195 can be coupled to the first lithographysubsystem 110, the scanner subsystem 115, the second lithographysubsystem 120, the third lithography subsystem 125, the thermalprocessing subsystem 130, the inspection subsystem 135, the etchingsubsystem 140, the deposition subsystem 145, the evaluation subsystem150, and the rework subsystem 155 using a data transfer subsystem 106.For example, the second lithography subsystem 120 can include a (postimmersion) cleaning subsystem (not shown).

The first lithography subsystem 110 can be coupled 111 a to a first S-Dtransfer subsystem 101 and coupled 111 b to a second S-D transfersubsystem 102. The scanner subsystem 115 can be coupled 116 a to a firstS-D transfer subsystem 101 and coupled 116 b to a second S-D transfersubsystem 102. The second lithography subsystem 120 can be coupled 121 ato a first S-D transfer subsystem 101 and coupled 122 to a second S-Dtransfer subsystem 102. The third lithography subsystem 125 can becoupled 126 a to a first S-D transfer subsystem 101 and coupled 126 b toa second S-D transfer subsystem 102. The thermal processing subsystem130 can be coupled 131 a to a first S-D transfer subsystem 101 andcoupled 131 b to a second S-D transfer subsystem 102. The inspectionsubsystem 135 can be coupled 136 a to a first S-D transfer subsystem 101and coupled 136 b to a second S-D transfer subsystem 102. The etchingsubsystem 140 can be coupled 141 a to a first S-D transfer subsystem 101and coupled 141 b to a second S-D transfer subsystem 102. The depositionsubsystem 145 can be coupled 146 a to a first S-D transfer subsystem 101and coupled 146 b to a second S-D transfer subsystem 102. The evaluationsubsystem 150 can be coupled 151 a to a first S-D transfer subsystem 101and coupled 151 b to a second S-D transfer subsystem 102. The reworksubsystem 155 can be coupled 156 a to a first S-D transfer subsystem 101and coupled 156 b to a second S-D transfer subsystem 102. Alternatively,other coupling configurations can be used.

In addition, a third transfer subsystem 103 can be coupled to the firstS-D transfer subsystem 101 and coupled to the second S-D transfersubsystem 102. The third transfer subsystem 103 can be coupled to othertransfer systems and/or processing systems (not shown). For example,transfer systems (101, 102, and 103) can use transfer elements 104 thatare coupled to delivery elements 105 to receive wafers, transfer wafers,align wafers, store wafers, and/or delay wafers. Alternatively, othertransferring means may be used.

A manufacturing execution system (MES) 180 can be coupled to the systemcontroller 195 using the data transfer subsystem 106. Alternatively, afactory level and/or host system may be used and other couplingtechniques may be used. In alternate embodiments, one or more additionalsubsystems may be required. For example, system controller 195 may becoupled to other processing systems and/or subsystems (not shown).Alternatively, other configurations may be used and other couplingtechniques may be used.

The first lithography subsystem 110 can comprise one or more processingelements 112 that can be coupled to the internal transfer device 113and/or can be coupled 111 a to the first S-D transfer subsystem 101. Thescanner subsystem 115 can comprise one or more processing elements 117that can be coupled to the internal transfer device 118 and/or can becoupled 116 a to the first S-D transfer subsystem 101. The secondlithography subsystem 120 can comprise one or more processing elements122 that can be coupled to the internal transfer device 123 and/or canbe coupled 121 a to the first S-D transfer subsystem 101. The thirdlithography subsystem 125 can comprise one or more processing elements127 that can be coupled to the internal transfer device 128 and/or canbe coupled 126 a to the first S-D transfer subsystem 101. The thermalprocessing subsystem 130 can comprise one or more processing elements132 that can be coupled to the internal transfer device 133 and/or canbe coupled 131 a to the first S-D transfer subsystem 101. The inspectionsubsystem 135 can comprise one or more S-D evaluation elements 137 thatcan be coupled to the internal transfer device 138 and/or can be coupled136 a to the first S-D transfer subsystem 101. The etching subsystem 140can comprise one or more processing elements 142 that can be coupled tothe internal transfer device 143 and/or can be coupled 141 a to thefirst S-D transfer subsystem 101. The deposition subsystem 145 cancomprise one or more processing elements 147 that can be coupled to theinternal transfer device 148 and/or can be coupled 146 a to the firstS-D transfer subsystem 101. The evaluation subsystem 150 can compriseone or more S-D evaluation elements 152 that can be coupled to theinternal transfer device 153 and/or can be coupled 151 a to the firstS-D transfer subsystem 101. The rework subsystem 155 can comprise one ormore processing elements 157 that can be coupled to the internaltransfer device 158 and/or can be coupled 156 a to the first S-Dtransfer subsystem 101. Various numbers of processing elements may beused in a subsystem. The processing elements can be coupled in seriesand/or in parallel and can have one or more input ports and/or one ormore output ports. For example, the processing elements may includetools, modules, chambers, sensors, and/or other devices.

In some embodiments, the subsystems can comprise additional transferdevices. The first lithography subsystem 110 can comprise one or moreinternal transfer devices 113 that can be coupled 111 b to the secondS-D transfer subsystem 102. The scanner subsystem 115 can comprise oneor more internal transfer devices 118 that can be coupled 116 b to thesecond S-D transfer subsystem 102. The second lithography subsystem 120can comprise one or more internal transfer devices 123 that can becoupled 121 b to the second S-D transfer subsystem 102. The thirdlithography subsystem 125 can comprise one or more internal transferdevices 128 that can be coupled 126 b to the second S-D transfersubsystem 102. The thermal processing subsystem 130 can comprise one ormore internal transfer devices 133 that can be coupled 131 b to thesecond S-D transfer subsystem 102. The inspection subsystem 135 cancomprise one or more internal transfer devices 138 that can be coupled136 b to the second S-D transfer subsystem 102. The etching subsystem140 can comprise one or more internal transfer devices 143 that can becoupled 141 b to the second S-D transfer subsystem 102. The depositionsubsystem 145 can comprise one or more internal transfer devices 148that can be coupled 146 b to the second S-D transfer subsystem 102. Theevaluation subsystem 150 can comprise one or more internal transferdevices 153 that can be coupled 151 b to the second S-D transfersubsystem 102. The rework subsystem 155 can comprise one or moreinternal transfer devices 158 that can be coupled 156 b to the secondS-D transfer subsystem 102. Alternatively, other coupling configurationscan be used. In other embodiments, any number of transfer devices and/ortransfer subsystems may be used in a system. The transfer devices and/ortransfer subsystems can be coupled in series and/or in parallel and canhave one or more input ports and/or one or more output ports.

The first lithography subsystem 110 can comprise one or more controllers114 that can be coupled to the system controller 195 and/or othercontrollers using a data transfer subsystem 106. The scanner subsystem115 can comprise one or more controllers 119 that can be coupled to thesystem controller 195 and/or other controllers using a data transfersubsystem 106. The second lithography subsystem 120 can comprise one ormore controllers 124 that can be coupled to the system controller 195and/or other controllers using a data transfer subsystem 106. The thirdlithography subsystem 125 can comprise one or more controllers 129 thatcan be coupled to the system controller 195 and/or other controllersusing a data transfer subsystem 106. The thermal processing subsystem130 can comprise one or more controllers 134 that can be coupled to thesystem controller 195 and/or other controllers using a data transfersubsystem 106. The inspection subsystem 135 can comprise one or morecontrollers 139 that can be coupled to the system controller 195 and/orother controllers using a data transfer subsystem 106. The etchingsubsystem 140 can comprise one or more controllers 144 that can becoupled to the system controller 195 and/or other controllers using adata transfer subsystem 106. The deposition subsystem 145 can compriseone or more controllers 149 that can be coupled to the system controller195 and/or other controllers using a data transfer subsystem 106. Theevaluation subsystem 150 can comprise one or more controllers 154 thatcan be coupled to the system controller 195 and/or other controllersusing a data transfer subsystem 106. The rework subsystem 155 cancomprise one or more controllers 159 that can be coupled to the systemcontroller 195 and/or other controllers. Alternatively, other couplingconfigurations can be used. In other embodiments, any number ofcontrollers may be used in a system. The controllers can be coupled inseries and/or in parallel and can have one or more input ports and/orone or more output ports. For example, the controllers may include8-bit, 16-bit, 32-bit, and/or 64-bit processors.

In addition, subsystems (110, 115, 120, 125, 130, 135, 140, 145, 150,and 155) can be coupled to each other and to other devices usingintranet, internet, and wired, and/or wireless connections. Thecontrollers (114, 119, 124, 129, 134, 139, 144, 149, 154, 159, and 195)can be coupled to each other as required.

One or more of the controllers (114, 119, 124, 129, 134, 139, 144, 149,154, 159, and 195) can be used when performing real-time S-D procedures.A controller can receive real-time data to update subsystem, processingelement, process, recipe, profile, and/or model data. One or more of thecontrollers (114, 119, 124, 129, 134, 139, 144, 149, 154, 159, and 195)can perform real-time S-D procedures using real-time data and providereal-time S-D data as described herein. In some embodiments, one or morecontrollers can be used to exchange one or more SECS messages with theMES 180, read and/or remove S-D information, feed forward and/orfeedback the S-D information, and/or send S-D information as an SECSmessage. One or more of the controllers (114, 119, 124, 129, 134, 139,144, 149, 154, 159, and 195) can perform S-D procedures using real-timedata and provide real-time S-D data. For example, a controller can beused to receive, process, and/or send the messages containing real-timedata.

In addition, controllers (114, 119, 124, 129, 134, 139, 144, 149, 154,159, and 195) can include memory (not shown) as required. For example,the memory (not shown) can be used for storing information andinstructions to be executed by the controllers (114, 119, 124, 129, 134,139, 144, 149, 154, and 159), and may be used for storing temporaryvariables or other intermediate information during the execution ofinstructions by the various computers/processors in the processingsystem 100. One or more controllers (114, 119, 124, 129, 134, 139, 144,149, 154, and 159), or other system components can comprise the meansfor reading data and/or instructions from a computer readable medium andcan comprise the means for writing data and/or instructions to acomputer readable medium.

The processing system 100 can perform a portion of or all of theprocessing steps of the invention in response to thecomputers/processors in the processing system executing one or moresequences of one or more instructions contained in a memory and/orreceived in a message. Such instructions may be received from anothercomputer, a computer readable medium, or a network connection.

Stored on any one or on any combination of computer readable media, thepresent invention includes software for controlling the processingsystem, for driving a device or devices for implementing the invention,and for enabling the processing system 100 to interact with a humanuser. Such software may include, but is not limited to, device drivers,operating systems, development tools, and applications software. Suchcomputer readable media further includes the computer program product ofthe present invention for performing all or a portion (if processing isdistributed) of the processing performed in implementing the invention.

The term “computer readable medium” as used herein refers to any mediumthat participates in providing instructions to the processor forexecution. A computer readable medium may take many forms, including butnot limited to, non-volatile media, volatile media, and transmissionmedia.

Subsystems (110, 115, 120, 125, 130, 135, 140, 145, 150, and 155) cancomprise processing tools (not shown). In some embodiments, anintegrated system can be configured using system components from TokyoElectron Limited (TEL). In other embodiments, external subsystems and/ortools may be included. The processing tools and/or processing elementscan include one or more etch tools, deposition tools, ALD tools,measurement tools, ionizations tools, polishing tools, coating tools,developing tools, cleaning tools, exposure tools, and thermal treatmenttools. In addition, measurement tools can be provided that can include aCD-Scanning Electron Microscopy (CDSEM) tool, a Transmission ElectronMicroscopy (TEM) tool, a focused ion beam (FIB) tool, an ODP tool, anAtomic Force Microscope (AFM) tool, or another optical metrology tool.The subsystems and/or processing elements can have different interfacerequirements, and the controllers can be configured to satisfy thesedifferent interface requirements.

One or more of the subsystems (110, 115, 120, 125, 130, 135, 140, 145,150, and 155) can comprise control components, GUI components, and/ordatabase components (not shown). For example, GUI components (not shown)that can provide easy to use interfaces that enable users to: viewstatus; create/view/edit site dependent and/or non-S-D procedures,strategies, plans, errors, faults, databases, rules, recipes, modelingapplications, simulation and/or spreadsheet applications, emailmessages, and diagnostics screens. As should be apparent to thoseskilled in the art, the GUI components need not provide interfaces forall functions, and may provide interfaces for any subset of thesefunctions or others not listed here.

One or more of the controllers (114, 119, 124, 129, 134, 139, 144, 149,154, 159, and 195) and/or the system controller 195 can be coupled todata transfer system 190 for exchanging information with the MES 180 andother subsystems. The data transfer system 190 can comprise hardwire andwireless components.

Subsystems (110, 115, 120, 125, 130, 135, 140, 145, 150, and 155),controllers (114, 119, 124, 129, 134, 139, 144, 149, 154, and 159),and/or the system controller 195 can include Advanced Process Control(APC) applications, Fault Detection and Classification (FDC), and/orRun-to-Run (R2R) applications. In some embodiments, S-D APCapplications, S-D FDC applications, and/or S-D R2R applications can beperformed.

In some embodiments, one or more of the controllers (114, 119, 124, 129,134, 139, 144, 149, 154, 159, and 195) can perform S-D processoptimization procedures, S-D model optimization procedures, or canperform S-D library optimization procedures, or any combination thereof.The S-D optimization procedures can use wafer data, models, recipes, andprofile data to update and/or optimize a procedure. For example, the S-Doptimization procedures can be operating in real-time. By usingreal-time S-D optimization, more accurate process results can beachieved. In smaller geometry technologies below the 65 nm node, resultsthat are more accurate are required.

Material and/or process variations that can affect process recipes,profiles, models, and/or process results can change from site-to-sitewithin a wafer, from wafer-to-wafer, and from lot-to-lot. Thesevariations can be caused by changes and/or problems in the one or moreof the subsystems (110, 115, 120, 125, 130, 135, 140, 145, 150, and155). Non-uniform films and/or non-uniform processes can cause problems.In addition, tool-to-tool variations, chamber-to-chamber variations, andchamber drift can lead to problems over time. Thicknesses and/oruniformities can change from site-to-site within a wafer, from wafer towafer, and from lot to lot during the etch process due to the nature ofusing end pointing and sacrificial films to control a bottom CD. Inaddition, thickness variations can cause changes in the opticalproperties and other physical properties. S-D procedures can be used toeliminate or minimize the problems caused by “over-etching”.

Output data and/or messages from S-D procedures can be used insubsequent procedures to optimize the process accuracy and precision.Data can be passed to S-D calculation procedures in real-time asreal-time variable parameters, overriding current model default valuesand narrowing the search space for resolving accurate results.Information can be used with a library-based system or in real-timeregression steps or any combination thereof to optimize a procedure.

An evaluation subsystem, such as 150, can include an integrated OpticalDigital Profiling (iODP) system (not shown). Alternatively, othermetrology systems may be used. An iODP tool is available from TimbreTechnologies Inc. (a TEL company). For example, ODP techniques can beused to obtain critical dimension (CD) information, structure profileinformation, or via profile information, and the wavelength ranges foran iODP system can range from less than approximately 200 nm to greaterthan approximately 900 nm. An exemplary iODP system can include an ODPProfiler Library, a Profiler Application Server (PAS), and ODP ProfilerSoftware. The ODP Profiler Library can comprise an application specificdatabase of optical spectra and its corresponding semiconductorprofiles, CDs, and film thicknesses. The PAS can comprise at least onecomputer that connects with optical hardware and computer network. ThePAS handles the data communication, ODP library operation, measurementprocess, results generation, results analysis, and results output. TheODP Profiler Software includes the software installed on PAS to managemeasurement recipe, ODP Profiler library, ODP Profiler data, ODPProfiler results search/match, ODP Profiler resultscalculation/analysis, data communication, and PAS interface to variousmetrology tools and computer network.

An evaluation subsystem, such as 150, can use polarizing reflectometry,spectroscopic ellipsometry, reflectometry, or other optical measurementtechniques to measure accurate device profiles, accurate criticaldimensions (CD), and multiple layer film thickness of a wafer. Theintegrated metrology process (iODP) can be executed in-line, whicheliminates the need to break the wafer for performing the analyses orwaiting for long periods for data from external tools. ODP techniquescan be used with the existing thin film metrology tools for inlineprofile and CD measurement, and can be integrated with TEL processingtools and/or lithography systems to provide real-time process monitoringand control. An exemplary optical metrology system is described in U.S.Pat. No. 6,913,900, entitled GENERATION OF A LIBRARY OF PERIODIC GRATINGDIFFRACTION SIGNAL, by Niu, et al., issued on Sep. 13, 2005, and isincorporated in its entirety herein by reference.

An alternative procedure for generating an S-D library ofsimulated-diffraction signals can include using a machine learningsystem (MLS). Prior to generating the library of simulated-diffractionsignals, the MLS is trained using known input and output data. In oneexemplary embodiment, simulated diffraction signals can be generatedusing a machine learning system (MLS) employing a machine learningalgorithm, such as back-propagation, radial basis function, supportvector, kernel regression, and the like. For a more detailed descriptionof machine learning systems and algorithms, see “Neural Networks” bySimon Haykin, Prentice Hall, 1999, which is incorporated herein byreference in its entirety. See also U.S. patent application Ser. No.10/608,300, titled OPTICAL METROLOGY OF STRUCTURES FORMED ONSEMICONDUCTOR WAFERS USING MACHINE LEARNING SYSTEMS, filed on Jun. 27,2003, which is incorporated herein by reference in its entirety.

For detailed description of metrology model optimization, refer to U.S.patent application Ser. No. 10/206,491, OPTIMIZED MODEL AND PARAMETERSELECTION FOR OPTICAL METROLOGY, by Vuong, et al., filed Jun. 27, 2002;Ser. No. 10/946,729, OPTICAL METROLOGY MODEL OPTIMIZATION BASED ONGOALS, by Vuong, et al., filed Sep. 21, 2004; and U.S. patentapplication Ser. No. 11/061,303, OPTICAL METROLOGY OPTIMIZATION FORREPETITIVE STRUCTURES, by Vuong, et al., filed on Apr. 27, 2004, all ofwhich are incorporated herein by reference in their entireties.

When a regression-based process is used, a measured diffraction signalmeasured off the patterned structure can be compared to simulateddiffraction signals. The simulated diffraction signals can beiteratively generated based on sets of profile parameters, to get aconvergence value for the set of profile parameters that generates theclosest match simulated diffraction signal compared to the measureddiffraction signal. For a more detailed description of aregression-based process, see U.S. Pat. No. 6,785,638, titled METHOD ANDSYSTEM OF DYNAMIC LEARNING THROUGH A REGRESSION-BASED LIBRARY GENERATIONPROCESS, issued on Aug. 31, 2004, which is incorporated herein byreference in its entirety.

When a library-based process is used, an optical metrology data librarycan be generated and/or enhanced using S-D and/or optimized recipes,profiles, and/or models. The optical metrology data library can comprisepairs of simulated diffraction signals and corresponding set of profileparameters. A detailed description of generating optical metrology datasuch as a library of simulated diffraction signals and corresponding setof profile parameters is described in U.S. Pat. No. 6,913,900, entitledGENERATION OF A LIBRARY OF PERIODIC GRATING DIFFRACTION SIGNAL, by Niu,et al., issued on Sep. 13, 2005, and is incorporated in its entiretyherein by reference. The regression-based and/or the library-basedprocess can include S-D and/or non-S-D steps.

One or more of the controllers (114, 119, 124, 129, 134, 139, 144, 149,154, 159, and 195) can perform APC, R2R, FDC, and/or S-D procedures thatcan operate as control strategies, control plans, control models, and/orrecipe managers to provide real-time S-D processing. S-D control and/oranalysis strategies/plans can cover multiple process steps within awafer processing sequence, and can be used to analyze the real-timeand/or collected data, and establish error conditions. An S-D analysisprocedure can be executed when a context is matched. During theexecution of an S-D analysis procedure, one or more analysis plans canbe executed. An S-D plan can create an error when a data failure occurs,an execution problem occurs, or a control problem occurs. An S-D datacollection plan and/or analysis plan can reject the data at one or moreof the evaluation sites for a wafer or reject the data because an S-Dprocedure fails. For example, dynamic S-D context matching allows forcustom configuration at each site.

In one embodiment, an S-D procedure failure may not terminate the S-Dprocedure. For example, an S-D procedure can indicate a failure when alimit is exceeded. Successful S-D procedures can create warning messageswhen limits are being approached. Pre-specified failure actions for S-Dprocedures errors can be stored in a database, and can be retrieved fromthe database when an error occurs.

In some embodiments, one or more of the subsystems (110, 115, 120, 125,130, 135, 140, 145, 150, and 155), can use S-D data received via thedata transfer system 190 to perform S-D procedures.

When a 25-wafer lot is being processed in a processing system, theprocessing throughput may be enhanced by providing 25 parallelprocessing paths, but this is impractical. However, an S-D processingsystem 100 can be used to efficiently and cost-effectively process oneor more 25-wafer lots. In addition, an S-D processing system 100 can beused to efficiently and cost-effectively process smaller and/or largerwafer lots.

Transfer subsystems (101, 102, and 103) and transfer devices (113, 118,123, 128, 133, 138, 143, 148, 153, and 158) can use S-D transfersequences and/or procedures to efficiently and cost-effectivelytransfer, align, delay, and/or store one or more wafers in one or morewafer lots. Some S-D procedures can be wafer-dependent, lot-dependent,and/or product dependent procedures.

The first lithography subsystem 110 can comprise one or more processingelements 112 that can process, measure, inspect, align, and/or store oneor more wafers using S-D procedures and/or non-S-D procedures. Thetransfer device 113, the first S-D transfer subsystem 101, and/or thesecond S-D transfer subsystem 102 can transfer, measure, inspect, align,and/or store one or more wafers using S-D procedures and/or non-S-Dprocedures. In some embodiments, the first lithography subsystem 110 cancomprise one or more processing elements 112 that can perform coatingprocedures, thermal procedures, measurement procedures, inspectionprocedures, alignment procedures, and/or storage procedures on one ormore wafers using S-D procedures and/or non-S-D procedures. For example,one or more of the processing elements 112 can be used to deposit one ormore masking layers that can include photoresist material, and/oranti-reflective coating (ARC) material, and one or more of theprocessing elements 112 can be used to thermally process (bake) one ormore of the masking layers. In addition, one or more processing elements112 can be used to measure and/or inspect one or more of the maskinglayers. S-D procedures and/or non-S-D procedures can be used to measureand/or inspect one or more of the wafers. One or more controllers 113can perform S-D procedures and/or non-S-D procedures to determine if thewafer has been processed correctly or if a rework procedure is required.The internal transfer device 113, the first S-D transfer subsystem 101,and/or the second S-D transfer subsystem 102 can transfer a defectivewafer to a rework subsystem.

In other embodiments, the first lithography subsystem 110 can compriseone or more processing elements 112 that can perform the potentiallycontaminating processes. One or more processing elements 112 can beisolated from the other subsystems, and this can provide lowerdefectivity and minimize possible contamination. One or more processingelements 112 can comprise airborne particle counters that can beestablished in the wafer path and/or in critical process areas tomonitor ambient defect levels. Detection levels can be established forwarning and/or alarm conditions. For example, these processes caninclude the “dirty” bake processes, and this allows these “dirty”processes to be isolated from the rest of the system. In addition, oneor more rework procedures may be performed by processing elementsisolated from the other subsystems.

The scanner subsystem 115 can comprise one or more processing elements117 that can process, measure, inspect, align, and/or store one or morewafers using S-D procedures and/or non-S-D procedures. The internaltransfer device 118, the first S-D transfer subsystem 101, and/or thesecond S-D transfer subsystem 102 can transfer, measure, inspect, align,and/or store one or more wafers using S-D procedures and/or non-S-Dprocedures. In some embodiments, the scanner subsystem 115 can compriseone or more processing elements 117 that can perform exposureprocedures, thermal procedures, drying procedures, measurementprocedures, inspection procedures, alignment procedures, and/or storageprocedures on one or more wafers using S-D procedures and/or non-S-Dprocedures. In addition, the scanner subsystem 115 can be used toperform wet and/or dry exposure procedures that can be S-D. In otherprocessing sequences, the scanner subsystem 115 can be used to performextreme ultraviolet (EUV) exposure procedures that can be S-D. Forexample, one or more of the processing elements 117 can be used toexpose one or more masking layers that can include photoresist material,and/or anti-reflective coating (ARC) material, and one or more of theprocessing elements 117 can be used to pattern one or more of themasking layers. In addition, one or more processing elements 112 can beused to measure and/or inspect one or more of the patterned layers. S-Dprocedures and/or non-S-D procedures can be used to measure and/orinspect one or more of the wafers. One or more controllers 113 canperform S-D procedures and/or non-S-D procedures to determine if thewafer has been processed correctly or if a rework procedure is required.The internal transfer device 118, the first S-D transfer subsystem 101,and/or the second S-D transfer subsystem 102 can transfer a defectivewafer to a rework subsystem.

The second lithography subsystem 120 can comprise one or more processingelements 112 that can process, measure, inspect, align, and/or store oneor more wafers using S-D procedures and/or non-S-D procedures. Theinternal transfer device 123, the first S-D transfer subsystem 101,and/or the second S-D transfer subsystem 102 can transfer, measure,inspect, align, and/or store one or more wafers using S-D proceduresand/or non-S-D procedures. In some embodiments, the second lithographysubsystem 120 can comprise one or more processing elements 122 that canperform cleaning procedures, thermal procedures, measurement procedures,inspection procedures, alignment procedures, and/or storage procedureson one or more wafers using S-D procedures and/or non-S-D procedures.For example, one or more of the processing elements 122 can be used toperform post-immersion cleaning procedures, and one or more of theprocessing elements 122 can be used to thermally process (dry) one ormore of the wafers. In addition, one or more processing elements 122 canbe used to measure and/or inspect one or more of the cleaned and/ordried wafers. S-D procedures and/or non-S-D procedures can be used tomeasure and/or inspect one or more of the wafers. One or morecontrollers 124 can perform S-D procedures and/or non-S-D procedures todetermine if the wafer has been cleaned correctly or if a reworkprocedure is required. For example, water spots and/or otherabnormalities can be detected. The internal transfer device 123, thefirst S-D transfer subsystem 101, and/or the second S-D transfersubsystem 102 can transfer a defective wafer to a rework subsystem.

The third lithography subsystem 125 can comprise one or more processingelements 127 that can process, measure, inspect, align, and/or store oneor more wafers using S-D procedures and/or non-S-D procedures. Theinternal transfer device 128, the first S-D transfer subsystem 101,and/or the second S-D transfer subsystem 102 can transfer, measure,inspect, align, and/or store one or more wafers using S-D proceduresand/or non-S-D procedures. In some embodiments, the third lithographysubsystem 125 can comprise one or more processing elements 127 that canperform developing procedures, thermal procedures, measurementprocedures, inspection procedures, alignment procedures, and/or storageprocedures on one or more wafers using S-D procedures and/or non-S-Dprocedures. For example, one or more of the processing elements 127 canbe used to develop one or more patterned mask layers that can includephotoresist material, and/or anti-reflective coating (ARC) material, andone or more of the processing elements 127 can be used to thermallyprocess (bake) one or more of the patterned mask layers. In addition,one or more processing elements 127 can be used to measure and/orinspect one or more of the patterned mask layers. S-D procedures and/ornon-S-D procedures can be used to measure and/or inspect one or more ofthe wafers. One or more controllers 129 can perform S-D proceduresand/or non-S-D procedures to determine if the wafer has been processedcorrectly or if a rework procedure is required. The internal transferdevice 128, the first S-D transfer subsystem 101, and/or the second S-Dtransfer subsystem 102 can transfer a defective wafer to a reworksubsystem.

In other embodiments, the third lithography subsystem 125 can compriseone or more processing elements 127 that can perform the potentiallycontaminating processes. One or more processing elements 127 can beisolated from the other subsystems, and this can provide lowerdefectivity and minimize possible contamination. One or more processingelements 127 can comprise airborne particle counters that can beestablished in the wafer path and/or in critical process areas tomonitor ambient defect levels. Detection levels can be established forwarning and/or alarm conditions. For example, these processes caninclude the “dirty” bake processes, and this allows these “dirty”processes to be isolated from the rest of the system. In addition, oneor more rework procedures may be performed by processing elementsisolated from the other subsystems.

The thermal processing subsystem 130 can comprise one or more processingelements 132 that can process, measure, inspect, align, and/or store oneor more wafers using S-D procedures and/or non-S-D procedures. Theinternal transfer device 133, the first S-D transfer subsystem 101,and/or the second S-D transfer subsystem 102 can transfer, measure,inspect, align, and/or store one or more wafers using S-D proceduresand/or non-S-D procedures. In some embodiments, the thermal processingsubsystem 130 can comprise one or more processing elements 132 that canperform baking procedures, annealing procedures, spike-annealingprocedures, thermal procedures, measurement procedures, inspectionprocedures, alignment procedures, and/or storage procedures on one ormore wafers using S-D procedures and/or non-S-D procedures. For example,one or more of the processing elements 132 can be used to raise and/orcontrol the temperature of one or more of the wafers, and one or more ofthe processing elements 132 can be used to lower and/or control thetemperature of one or more of the wafers. In addition, one or moreprocessing elements 132 can be used to measure and/or inspect one ormore of the wafers. S-D procedures and/or non-S-D procedures can be usedto measure and/or inspect one or more of the wafers. One or morecontrollers 134 can perform S-D procedures and/or non-S-D procedures todetermine if the wafer has been processed correctly or if a reworkprocedure is required. The internal transfer device 133, the first S-Dtransfer subsystem 101, and/or the second S-D transfer subsystem 102 cantransfer a defective wafer to a rework subsystem.

The inspection subsystem 135 can comprise one or more S-D evaluationelements 137 that can evaluate, process, measure, inspect, align,verify, and/or store one or more wafers using S-D procedures and/ornon-S-D procedures. The internal transfer device 138, the first S-Dtransfer subsystem 101, and/or the second S-D transfer subsystem 102 cantransfer, measure, inspect, align, and/or store one or more wafers usingS-D procedures and/or non-S-D procedures. In some embodiments, theinspection subsystem 135 can comprise one or more S-D evaluationelements 137 that can perform evaluation procedures, inspectionprocedures, particle detection procedures, measurement procedures,alignment procedures, verification procedures, and/or storage procedureson one or more wafers using S-D procedures and/or non-S-D procedures.For example, one or more of the S-D evaluation elements 137 can be usedto perform optical inspections, and one or more of the S-D evaluationelements 137 can be used to perform inspections at shorter wavelengthson one or more of the wafers. In addition, one or more S-D evaluationelements 137 can be used to detect particles on one or more of thewafers. S-D procedures and/or non-S-D procedures can be used to measureand/or inspect one or more surfaces of the wafers. One or morecontrollers 139 can perform S-D procedures and/or non-S-D procedures todetermine if the wafer has been processed correctly or if a reworkprocedure is required. The internal transfer device 138, the first S-Dtransfer subsystem 101, and/or the second S-D transfer subsystem 102 cantransfer a defective wafer to a rework subsystem.

The etching subsystem 140 can comprise one or more processing elements142 that can process, measure, inspect, align, and/or store one or morewafers using S-D procedures and/or non-S-D procedures. The internaltransfer device 143, the first S-D transfer subsystem 101, and/or thesecond S-D transfer subsystem 102 can transfer, measure, inspect, align,and/or store one or more wafers using S-D procedures and/or non-S-Dprocedures. In some embodiments, the etching subsystem 140 can compriseone or more processing elements 142 that can perform etching procedures,chemical oxide removal (COR) procedure, ashing procedures, inspectionprocedures, rework procedures, measurement procedures, alignmentprocedures, and/or storage procedures on one or more wafers using S-Dprocedures and/or non-S-D procedures. For example, one or more of theprocessing elements 142 can be used to create and/or modify patternedwafers using one or more S-D and/or non-S-D plasma etching procedures,and one or more of the processing elements 142 can be used to createand/or modify patterned wafers using one or more S-D and/or non-S-Dnon-plasma etching procedures. In addition, one or more processingelements 142 can be used to remove layer material and/or process residuefrom one or more of the wafers. S-D procedures and/or non-S-D procedurescan be used to measure and/or inspect one or more surfaces of thewafers. One or more controllers 144 can perform S-D procedures and/ornon-S-D procedures to determine if the wafer has been processedcorrectly or if a rework procedure is required. The internal transferdevice 143, the first S-D transfer subsystem 101, and/or the second S-Dtransfer subsystem 102 can transfer a defective wafer to a reworksubsystem.

The deposition subsystem 145 can comprise one or more processingelements 147 that can process, measure, inspect, align, and/or store oneor more wafers using S-D procedures and/or non-S-D procedures. Theinternal transfer device 148, the first S-D transfer subsystem 101,and/or the second S-D transfer subsystem 102 can transfer, measure,inspect, align, and/or store one or more wafers using S-D proceduresand/or non-S-D procedures. In some embodiments, the deposition subsystem145 can comprise one or more processing elements 147 that can performdeposition procedures, inspection procedures, measurement procedures,alignment procedures, and/or storage procedures on one or more wafersusing S-D procedures and/or non-S-D procedures. For example, one or moreof the processing elements 147 can be used to perform physical vapordeposition (PVD) procedures, chemical vapor deposition (CVD) procedures,ionized physical vapor deposition (iPVD) procedures, atomic layerdeposition (ALD) procedures, plasma enhanced atomic layer deposition(PEALD) procedures, and/or plasma enhanced chemical vapor deposition(PECVD) procedures. S-D procedures and/or non-S-D procedures can be usedto measure and/or inspect one or more surfaces of the wafers. One ormore controllers 149 can perform S-D procedures and/or non-S-Dprocedures to determine if the wafer has been processed correctly or ifa rework procedure is required. The internal transfer device 148, thefirst S-D transfer subsystem 101, and/or the second S-D transfersubsystem 102 can transfer a defective wafer to a rework subsystem.

The evaluation subsystem 150 can comprise one or more S-D evaluationelements 152 that can evaluate, measure, inspect, align, verify, and/orstore one or more wafers using S-D procedures and/or non-S-D procedures.The internal transfer device 153, the first S-D transfer subsystem 101,and/or the second S-D transfer subsystem 102 can transfer, measure,inspect, align, and/or store one or more wafers using S-D proceduresand/or non-S-D procedures. In some embodiments, the evaluation subsystem150 can comprise one or more S-D evaluation elements 152 that canperform evaluation procedures, inspection procedures, temperaturecontrol procedures, measurement procedures, alignment procedures,verification procedures, and/or storage procedures on one or more wafersusing S-D procedures and/or non-S-D procedures. For example, one or moreof the S-D evaluation elements 152 can be used to perform opticalmetrology procedures that can be used to measure features and/orstructures on the wafer, and one or more of the S-D evaluation elements152 can be used to perform measurements of the wafer surface. Inaddition, one or more S-D evaluation elements 152 can be used todetermine wafer curvature or to measure and/or inspect one or moresurfaces of the wafers. An S-D evaluation element 152 can perform S-Devaluation procedures and/or non-S-D evaluation procedures. One or morecontrollers 154 can perform S-D procedures and/or non-S-D procedures todetermine if the wafer has been processed correctly or if a reworkprocedure is required. The internal transfer device 153, the first S-Dtransfer subsystem 101, and/or the second S-D transfer subsystem 102 cantransfer a defective wafer to a rework subsystem.

The rework subsystem 155 can comprise one or more processing elements157 that can process, measure, inspect, align, and/or store one or morewafers using S-D procedures and/or non-S-D procedures. The internaltransfer device 158, the first S-D transfer subsystem 101, and/or thesecond S-D transfer subsystem 102 can transfer, measure, inspect, align,and/or store one or more wafers using S-D procedures and/or non-S-Dprocedures. In some embodiments, the rework subsystem 155 can compriseone or more processing elements 157 that can perform cleaningprocedures, etching procedures, layer removal procedures, ashingprocedures, inspection procedures, residue removal procedures,measurement procedures, alignment procedures, and/or storage procedureson one or more wafers using S-D procedures and/or non-S-D procedures.For example, one or more of the processing elements 157 can be used toremove material from one or more patterned wafers using one or more S-Dand/or non-S-D plasma etching procedures, and one or more of theprocessing elements 157 can be used to remove material from one or morepatterned using one or more S-D and/or non-S-D non-plasma etchingprocedures. In addition, one or more processing elements 157 can be usedto remove damaged material from one or more of the wafers. S-Dprocedures and/or non-S-D procedures can be used to measure and/orinspect one or more surfaces of the wafers. One or more controllers 159can perform S-D procedures and/or non-S-D procedures to determine if thewafer has been processed correctly or if a rework procedure is required.The internal transfer device 158, the first S-D transfer subsystem 101,and/or the second S-D transfer subsystem 102 can transfer a defectivewafer to a rework subsystem.

Each subsystem can process one or more wafers in parallel, and one ormore S-D procedures and/or non-S-D procedures can be performed.

One or more of the formatted messages can be exchanged betweensubsystems. The controllers can process messages and extract new data.When new data is available, a controller can either use the new data toupdate a recipe, profile, and/or model currently being used for thewafer lot or can use the new data to update a recipe, profile, and/ormodel for the next wafer lot. When the controller uses the new data toupdate recipe data, profile data, and/or modeling data for the wafer lotcurrently being processed, the controller can determine if a recipe, aprofile, and/or a model can be updated before the current wafer isprocessed. The current wafer can be processed using the updated recipe,profile, and/or model when the recipe, profile, and/or model can beupdated before the current wafer is processed. The current wafer can beprocessed using a non-updated recipe, profile, and/or model when thedata cannot be updated before the current wafer is processed. Forexample, when a new S-D etching recipes, profiles, and/or models areavailable, an etching subsystem and/or etching controller may determinewhen to use the new S-D etching recipes, profiles, and/or models.

One or more evaluation procedures can provide S-D damage-assessment dataand/or non-S-D damage-assessment data that can include data for damagedlayers, features, and/or structures for different sites, wafers, and/orlots. One or more processing subsystems can use the damage-assessmentdata to update, and/or optimize processing recipe data, process profiledata, and/or modeling data. For example, the etching subsystem 140 canuse the damage-assessment data to update, and/or optimize an etchingchemistry and/or etching time. In addition, the deposition subsystem 145and/or lithography subsystem (110, 120, and 125) can use thedamage-assessment data to update, and/or optimize recipe data, profiledata, and/or modeling data.

S-D procedures can be used to create, modify, and/or evaluate isolatedand/or nested structures at different times and/or sites. For example,wafer thickness data can be different near isolated and/or nestedstructures, and wafer thickness data can be different near open areasand/or trench array areas. A processing subsystem can use new S-D datafor isolated and/or nested structures to update and/or optimize an S-Dprocess recipe and/or process time. S-D procedures can use end-pointdetection (EPD) data and process time data to improve the computationalaccuracy. While a wafer and/or lot is being processed, S-D data can begenerated, and this data can be fed forward and/or fed back in real timeby the processing system to update process, measurement, and/orsimulation recipes before the current wafer is processes or beforeadditional wafers in the wafer lot are processed. Alternatively, non-S-Ddata may be used. When EPD data is used to stop an S-D procedure, theEPD time data and the process rate data can be used to calculate and/orestimate an S-D film thickness. During processing, monitor and/orverification wafers can be run periodically, and S-D measurementprocedures can be used to verify the S-D film thicknesses before and/orafter S-D processing procedures, such as etch, deposition, lithography,cleaning, and polishing procedures.

Evaluation subsystem 150 data can include measured and/or simulatedsignals associated with S-D patterned structures or un-patternedstructures, and the S-D signals can be stored using processing statedata, and wafer, lot, recipe, site, or wafer location data. Measurementdata can include variables associated with patterned structure profile,metrology device type and associated variables, and ranges used for thevariables floated in the modeling and values of variables that werefixed in the modeling. The library profile data, the S-D data mayinclude fixed and/or variable profile parameters (such as CD, sidewallangle, N&K parameters), and/or metrology device parameters (such aswavelengths, angle of incidence, and/or azimuth angle).

In some embodiments, S-D procedures can use measured, predicted, and/orsimulated diffraction signals to optimize an optical metrology recipe,structure, and/or model. S-D procedures may utilizecontext/identification information such as site ID, wafer ID, slot ID,lot ID, recipe, state, and patterned structure ID as a means fororganizing and indexing data. In some example, the library data caninclude verified data associated with products, devices, wafers,procedures, lots, recipes, sites, locations, patterned and/orun-patterned structures. S-D data may include underlying film data andthe underlying film data may be used by the S-D procedures to makereal-time updates and/or corrections. During processing, somemeasurement sites can be non-measurable due to interference fromunderlying layers and or structures. S-D interference-based maps can becreated and used to determine site locations that can be used for themeasurements. In addition, S-D interference profiles and/or models canbe created can be used to overcome these problems.

In addition, the S-D procedures may create, update, and/or optimize alibrary of S-D signals and the corresponding set of S-D profileparameters. The S-D procedures may create, update, and/or optimize adata set from a trained machine learning system (MLS), and the MLS maybe trained with a subset of the library data. Changed and/or updatedvalues can be stored and/or used to improve performance. S-D and/ornon-S-D libraries and databases can be used.

Intervention and/or judgment rules can be defined in an S-D strategy,plan, model, subsystem, element, or procedure. Intervention and/orjudgment rules can be assigned to execute whenever a matching context isencountered. The intervention and/or judgment rules can be for variousprocedures and can be maintained in the database.

In some examples, the MES 180 may be configured to monitor some systemprocesses, and factory level intervention and/or judgment rules can beused to determine which processes are monitored and which data can beused. In addition, factory level intervention and/or judgment rules canbe used to determine how to manage the data when a process can bechanged, paused, and/or stopped. In addition, the MES 180 can provideS-D configuration information and S-D update information. Data can beexchanged using GEM SECS communications protocol.

In general, rules allow S-D procedures to change based on the dynamicstate of a semiconductor processing system and/or the processing stateof a product. Some setup and/or configuration information can bedetermined by the processing system subsystems when they are initiallyconfigured. In addition, rules can be used to establish a controlhierarchy for S-D procedures. Rules can be used to determine when aprocess can be paused and/or stopped, and what can be done when aprocess is paused and/or stopped. In addition, processing rules can beused to determine what corrective actions are to be performed.Processing sequence rules and transfer sequence rules can also be usedto determine what wafers are to be processes and/or transferred.Exemplary methods of processing a wafer can include receiving one ormore wafers and associated wafer data, and establishing a processingsequence and/or state data for each wafer.

The wafer state data can include a sequencing state (SQ_(n,m)) variablethat can be determined from the processing sequence. In someembodiments, the processing sequence can be obtained from a MES 180 andcannot be modified. In other embodiments, a virtual (modifiable)processing sequence can be established, and the sequencing state and/orprocess start time can be changed by a subsystem computer and/or anoperator. For example, additional sequence states altered start timesmay be used to establish additional processing steps, to hold waferswhile processing steps are being performed, to hold wafers whilecalculations are being performed, to route wafers to different toolswhen a tool goes off-line, and/or to correct and/or analyze faultconditions. In addition, additional sequence steps and/or delayed starttimes may be used to hold and/or re-route wafers while S-D data and/ormessages are created, processed, sent, and/or received.

In some examples, an S-D transfer subsystem can use loading data todetermine where to transfer a wafer. In other examples, an S-D transfersubsystem can use processing sequence data to determine where totransfer a wafer. In still other examples, an S-D transfer subsystem canuse confidence data to determine where to transfer a wafer.Alternatively, other procedures may be used.

The confidence data can include an assessment of each process that wasperformed on the wafer. When processing data from an S-D procedure isclose to expected values, the confidence value for that S-D procedurecan be high, and when processing data from an S-D procedure is not closeto the expected values, the confidence value for that S-D procedure canbe low. For example, confidence values can range from zero to nine,where zero indicates a failure condition and nine indicates a correctperformance.

Wafer state data can include wafer number (WN) data, processing sequence(PS) data, step counter (SC) data, process type (PT) data, process state(PS) data, site dependency (SD) data, status (ST) data, and delay time(DT) data. The wafer number (WN) data can be used to identify a wafer,the processing sequence (PS) data can be used to identify the processingsequences associated with a wafer, step counter (SC) data can be used toidentify the number of process steps for a wafer, process type (PT) datacan be used to establish the type of process that was performed at eachprocess step, site dependency (SD) can be a site dependency number andcan be used to establish the one or more sites that were used toestablish the type of S-D procedure to perform at each process step, thestatus (ST) and can be used to establish if a process step has beenperformed and whether or not the process step was successful, and thedelay time (DT) data can include timing data. A delay time data can beused to delay wafer sequencing, calculations, processes, and/ormeasurements.

In some embodiments, the wafer data can include a variable data. Forexample, when a feed-forward variable is a first value, the data and/ormessages can be fed forward, and when the feed-forward variable is asecond value, the data and/or messages are not fed forward. When an S-Dvariable is a first value, an S-D procedure can be performed, and whenthe S-D variable is a second value, a non-S-D procedure can beperformed.

In some embodiments, input and output messages can include faultmessages, response messages, error messages, S-D messages, feedbackmessages, non-S-D messages, internal messages, external messages,optimization messages, status messages, timing messages, process resultsmessages, and/or other messages. In addition, messages can includereal-time command, configuration, calculation, and/or overrideinformation. The data can be used in real-time as S-D procedurevariables/parameters, can be used to override current recipe data,profile, and/or model default values, to override current transfersequence data, to override current start times, and can be used tonarrow the search space for determining recipes, profiles, and/or modelsand their associated accuracy limits.

In various embodiments, one or more input messages can be receivedand/or processed by one or more of the controllers (114, 119, 124, 129,134, 139, 144, 149, 154, and 159), and one or more output messages canbe created and/or sent by one or more of the controllers (114, 119, 124,129, 134, 139, 144, 149, 154, and 159). In some examples, an inputmessage can be a formatted message comprising S-D data and non-S-D data.A controller can process a formatted message to create an S-D messageand/or a separate non-S-D message for a subsystem. The S-D message caninclude S-D wafer data that can be used to reduce search times inlibraries and databases, to reduce calculation errors, to improveaccuracy. For example, a smaller profile space within a library spacecan be identified using the S-D data. In addition, S-D thickness and/ortemperature data can be used and an S-D procedure can use this data todetermine profiles from the profile library in real-time, therebydecreasing measurement time and increasing throughput. The controllercan examine the input message in real time to determine when the inputmessage includes an S-D message that it can use, and/or the controllercan determine how to extract in real-time the S-D message. Messages canuse XML format and/or SML format. The system can provide and manageexception handling with S-D messages that are being sent, split, and/orparsed for multiple subsystems.

For example, some devices/products may require 20-30 nm gate structures,and there may millions of these structures on every wafer beingproduced. S-D processing can be used to minimize the amount of testingthat must be performed to guarantee that the structures are correct.

The processing sequence can also depend on the throughput of othersubsystems including the scanner subsystem. The S-D transfer system canbe configured to maximize the overall throughput. For example, S-Dtransfer sequences can be established and used to minimize throughputissues caused by slower subsystems, such as the scanner subsystem. Insome embodiments, the S-D transfer subsystem can delay wafers having alower confidence value and/or higher risk. In other embodiments, the S-Dtransfer subsystem can immediately send wafers having a lower confidencevalue and/or higher risk to a rework subsystem when a rework processingsequence can be established and performed in a relatively short amountof time.

An S-D procedure can produce a specific result at a specific location ona wafer. When a process is mature, confidence values should be high, anda minimum amount of wafers should require evaluation, one site on awafer can be used to declare a wafer and/or group of wafers. When theprocess is mature, the process results from all of the sites on a wafershould be the same (within a uniformity limit). When a product is beingdeveloped, evaluation features/properties/structures at a large numberof sites can be used to establish low risk procedures.

The processing system 100 can be used to verify one or more S-Dprocessing procedures.

In some embodiments, one or more wafers can be received by one or moreS-D transfer subsystems (101, 102), and the S-D TRANSFER subsystems(101, 102) can be coupled to one or more subsystems (110, 115, 120, 125,130, 135, 140, 145, 150, and 155) in the processing system 100. Eachwafer can have one or more layers thereon, can have wafer dataassociated therewith, and the wafer data can include historical and/orreal-time data. An S-D transfer subsystem can use business rules todetermine when to send wafers to the rework subsystem and or storagelocations. These business rules can be different as the wafers areprocessed (acquire additional layers).

For example, a “golden wafer” can be produced using a “golden” S-Dprocessing sequence. At some locations on the wafer, measurementstructure can be established that are near one or more of the gatestructures. At these locations, CDSEM data can be processed using thefirst wafer data and first confidence data can be obtained during thecomparisons. The confidence data can be compared to confidence limits.If the first confidence limit is not with a first delta, the processing(measurement) sequence for that wafer can be changed and measurementdata can be obtained from one or more additional sites on the wafer. Ifthe confidence data is bad, the wafer can be reworked. If the confidencedata at more than one site is bad, the wafer can be reworked. If theconfidence data for more than one wafer is bad, the entire group can bereworked.

The S-D transfer system can be configured to maximize the overallthroughput. For example, S-D transfer sequences can be established andused to minimize throughput issues caused by slower subsystems, such asthe scanner subsystem. In some embodiments, the S-D transfer subsystemcan delay wafers having a lower confidence value and/or higher risk. Inother embodiments, the S-D transfer subsystem can immediately sendwafers having a lower confidence value and/or higher risk to a reworksubsystem when a rework processing sequence can be established andperformed in a relatively short amount of time.

An S-D procedure will produce a specific result at a specific locationon a wafer. When a process is mature, confidence values should be high,and a minimum amount of wafers should require evaluation, one site on awafer can be used to declare a wafer and/or group of wafers. When theprocess is mature, the process results from all of the sites on a wafershould be the same (within a uniformity limit).

When a product is being developed, evaluationfeatures/properties/structures at a large number of sites can be used toestablish low risk procedures.

The processing system 100 can be used to verify one or more S-Dprocessing procedures.

In some embodiments, one or more wafers can be received by one or moreS-D transfer subsystems (101, 102), and the S-D transfer subsystems(101, 102) can be coupled to one or more subsystems (110, 115, 120, 125,130, 135, 140, 145, 150, and 155) in the processing system 100. Eachwafer can have one or more layers thereon, can have wafer dataassociated therewith, and the wafer data can include historical and/orreal-time data. An S-D transfer subsystem can use business rules todetermine when to send wafers to the rework subsystem and or storagelocations. These business rules can be different as the wafers areprocessed (acquire additional layers).

One or more of the controllers (114, 119, 124, 129, 134, 139, 144, 149,154, 159, and 195) can be configured for determining wafer state datafor each wafer, for determining a first unverified S-D procedure usingthe wafer data and/or the wafer state data. The first unverified S-Dprocedure being performed using one or more subsystems (110, 115, 120,125, 130, 135, 140, 145, 150, and 155).

One or more of the controllers (114, 119, 124, 129, 134, 139, 144, 149,154, 159, and 195) can be configured for establishing a first number ofS-D wafers to be processed using the first unverified S-D procedure, forestablishing a number of required verification sites for each S-D waferusing the wafer data and the first unverified S-D procedure, fordetermining operational state data for the one or more S-D processingelements in the first processing subsystem, for determining loading datafor the one or more S-D transfer elements (104) in the one or more S-Dtransfer subsystems (101, 102), for establishing a first transfersequence for a first S-D wafer in the first number of S-D wafers usingthe wafer data, the wafer state data, the operational state data,loading data, or the number of required verification sites, or anycombination thereof, and for delaying the first S-D wafer for a firstperiod of time using the S-D transfer subsystem coupled to the firstprocessing subsystem when the first S-D processing element is notavailable.

One or more of the S-D transfer subsystems (101, 102) can be configuredfor transferring a first S-D wafer to one of the S-D processing elements(112, 117, 122, 127, 132, 142, 147, and 157) in one or more subsystems(110, 115, 120, 125, 130, 135, 140, 145, 150, and 155). In addition, theone or more of the S-D transfer subsystems (101, 102) can be configuredfor delaying the first S-D wafer for the first period of time using atransfer element 104 in the S-D transfer subsystems (101, 102), and thetransfer element 104 can support two or more wafers. After the firstperiod of time, the delayed first S-D wafer can be processed in one ormore of the subsystems (110, 115, 120, 125, 130, 135, 140, 145, 150, and155).

After the first S-D wafer is transferred, the first unverified S-Dprocedure can be performed using the first S-D wafer, and during thefirst unverified S-D procedure a first set of S-D verification featurescan be created on a first processed S-D wafer. The first set of S-Dverification features can include a first verification feature at afirst site on the first processed S-D wafer.

A first processed S-D wafer can be created when the first unverified S-Dprocedure is performed on the first wafer, the first processed S-D wafercan be transferred to a first S-D evaluation element 137 in aninspection subsystem 135 or a first S-D evaluation element 152 in afirst evaluation subsystem 150 using one or more of the S-D transfersubsystems (101, 102) that are coupled to the inspection subsystem 135and the evaluation subsystem 150 when the first S-D evaluation element(137, 152) is available, and the first S-D wafer can be delayed for asecond period of time using one or more of the S-D transfer subsystems(101, 102) when the first S-D evaluation element is not available. Inaddition, the one or more of the S-D transfer subsystems (101, 102) canbe configured for delaying the first processed S-D procedure using atransfer element 104 in the S-D transfer subsystems (101, 102), and thetransfer element 104 can support two or more wafers. After the secondperiod of time, the first processed S-D wafer can be evaluated in theinspection subsystem 135 and/or the evaluation subsystem 150.

When an evaluation procedure is performed, a first site can be used. Insome example, evaluation decisions can be made using the data from afirst site. One or more of the controllers (114, 119, 124, 129, 134,139, 144, 149, 154, 159, and 195) can be configured for selecting afirst site from the number of required sites on the first processed S-Dwafer, wherein the first site has a first unverified feature associatedtherewith that was created using the first unverified S-D procedure, forobtaining first unverified data from the first site on the first S-Dwafer, where the first site has first unverified measurement and/orinspection data associated therewith, for establishing firstverification data for the first site on the first S-D wafer, wherein thefirst verification data comprises verified measurement and/or inspectiondata, for establishing a first confidence value for the first site usinga first difference between the first unverified data and the firstverification data, for establishing a first risk factor for the firstunverified S-D procedure using the first confidence value, the firstdifference, or the wafer data, or any combination thereof; f)establishing a first total risk factor for the first unverified S-Dprocedure using the first risk factor, or any combination thereof; g)identifying the first unverified S-D procedure as a first verifiedprocedure having the first risk factor associated therewith, decreasingthe number of required sites by one, and increasing the number ofvisited sites by one, when the first risk factor is less than or equalto a new threshold limit; h) identifying the first unverified S-Dprocedure as a first unverified procedure having a second risk factorassociated therewith, decreasing the number of required sites by one,and increasing the number of visited sites by one, when the first riskfactor is greater than the first threshold limit, wherein the firstunverified S-D procedure has confidence data, risk data, and/orverification data associated therewith.

In some examples, when an evaluation procedure is performed, additionalsites can be used on the first S-D wafer. For example, evaluationdecisions can be made using the data from a first site and data from oneor more additional sites on the first S-D wafer. One or more of thecontrollers (114, 119, 124, 129, 134, 139, 144, 149, 154, 159, and 195)can also be configured to perform the following steps: a) selecting anew site from the number of required sites on the first S-D wafer,wherein the new site has a new unverified feature associated therewiththat was created using the first S-D verification procedure; b)obtaining new unverified data from the new site on the first S-D wafer,wherein the new site has new unverified measurement and/or inspectiondata associated therewith; c) establishing new verification data for thenew site; d) establishing a new confidence value for the new site on thefirst S-D wafer using a new difference between the new unverified dataand the new verification data; e) establishing a new first risk factorfor the first unverified S-D procedure using the new confidence value,the new difference, first confidence value, the first difference, or thewafer data, or any combination thereof; f) establishing a new firsttotal risk factor for the first unverified S-D procedure using the waferdata, the first risk factor, or the new first risk factor, or anycombination thereof; g) identifying the first unverified S-D procedureas a new verified procedure having the new first total risk factorassociated therewith, decreasing the number of required sites by one,and increasing the number of visited sites by one, when the new firsttotal risk factor is less than or equal to a new threshold limit; h)identifying the first unverified S-D procedure as a new unverifiedprocedure having a new second risk factor associated therewith,decreasing the number of required sites by one, and increasing thenumber of visited sites by one, when the new first total risk factor isgreater than the new threshold limit; i) repeating steps a)-h) when thenumber of required sites is greater than zero; and j) stopping theverification of the first wafer when the number of required sites isequal to zero.

In other examples, when an evaluation procedure is performed, sites onadditional S-D wafers can be used. For example, evaluation decisions canbe made using the data from sites on one or more S-D wafers. One or moreof the controllers (114, 119, 124, 129, 134, 139, 144, 149, 154, 159,and 195) can also be configured for establishing an additionalprocedure-verification sequence for an additional S-D wafer in the firstset of S-D wafers using the wafer data, the process state data, thenumber of required verification sites, the number of verificationvisited sites, or the number of required verification sites or anycombination thereof, and for determining a first unverified S-Dprocedure for the additional S-D wafer, wherein the first unverified S-Dprocedure is determined using the additional procedure-verificationsequence and comprises one or more processing procedures.

One or more of the S-D transfer subsystems (101, 102) can be configuredfor transferring an additional S-D wafer to one of the S-D processingelements (112, 117, 122, 127, 132, 142, 147, and 157) in one or moresubsystems (110, 115, 120, 125, 130, 135, 140, 145, 150, and 155). Inaddition, the one or more of the S-D transfer subsystems (101, 102) canbe configured for delaying the additional S-D wafer for a second periodof time using a transfer element 104 in the S-D transfer subsystems(101, 102), and the transfer element 104 can support two or more wafers.After the second period of time, the additional S-D wafer can beprocessed in one or more of the subsystems (110, 115, 120, 125, 130,135, 140, 145, 150, and 155).

After the additional S-D wafer is transferred, the first unverified S-Dprocedure can be performed using the additional S-D wafer, and duringthe first unverified S-D procedure a first set of S-D verificationfeatures can be created on an additional processed S-D wafer. The firstset of S-D verification features can include a first verificationfeature at a first site on the additional processed S-D wafer.

A additional processed S-D wafer can be created when the firstunverified S-D procedure is performed on the additional wafer, theadditional processed S-D wafer can be transferred to a first S-Devaluation element 137 in an inspection subsystem 135 or a first S-Devaluation element 152 in a first evaluation subsystem 150 using one ormore of the S-D transfer subsystems (101, 102) that are coupled to theinspection subsystem 135 and the evaluation subsystem 150 when the firstS-D evaluation element (137, 152) is available, and the additionalprocessed S-D wafer can be delayed for a third period of time using oneor more of the S-D transfer subsystems (101, 102) when the first S-Devaluation element is not available. In addition, the one or more of theS-D transfer subsystems (101, 102) can be configured for delaying theadditional processed S-D wafer for the third period of time using atransfer element 104 in the S-D transfer subsystems (101, 102), and thetransfer element 104 can support two or more wafers. After the thirdperiod of time, the first processed S-D wafer can be evaluated in theinspection subsystem 135 and/or the evaluation subsystem 150.

When first sites on additional processed S-D wafers are used, one ormore of the controllers (114, 119, 124, 129, 134, 139, 144, 149, 154,159, and 195) can also be configured to perform the following steps: a1)selecting a first site from the number of required sites on anadditional processed S-D wafer, where the first site has a firstverification feature associated therewith; b1) obtaining additionalunverified data from the first site on the additional processed S-Dwafer, wherein the first site has first unverified measurement and/orinspection data associated therewith; c1) establishing additionalverification data for the additional processed S-D wafer using the firstsite on the additional S-D wafer, where the first verification datacomprises verified measurement and/or inspection data; d1) establishingan additional confidence value for the first site on the additionalprocessed S-D wafer using an additional difference between theadditional unverified data and the additional verification data; e1)establishing an additional risk factor for the first unverified S-Dprocedure using the additional confidence value, the additionaldifference the first confidence value, the first difference, or thewafer data, or any combination thereof; f1) establishing an additionaltotal risk factor for the first unverified S-D procedure using theadditional risk factor, the additional confidence value, the additionaldifference, the first risk factor, the first confidence value, the firstdifference, or the wafer data, or any combination thereof; g1)identifying the first unverified S-D procedure as a verified procedurehaving the additional total risk factor associated therewith, decreasingthe number of required sites by one, and increasing the number ofvisited sites by one, when the additional total risk factor is less thanor equal to an additional threshold limit; h1) identifying the firstunverified S-D procedure as an additional unverified procedure having anadditional second risk factor associated therewith, decreasing thenumber of required sites by one, and increasing the number of visitedsites by one, when the additional total risk factor is greater than theadditional threshold limit; i1) repeating steps a1)-h1) when the numberof required additional S-D wafers is greater than zero; and j1) stoppingthe verification of the first wafer when the number of requiredadditional S-D wafers is equal to zero.

When additional required sites on additional processed S-D wafers areused, one or more of the controllers (114, 119, 124, 129, 134, 139, 144,149, 154, 159, and 195) can also be configured to perform the followingsteps: a2) selecting a new site from the number of required sites on anadditional processed S-D wafer, wherein the new site has a firstverification feature associated therewith that was created using thefirst unverified S-D procedure; b2) obtaining additional new unverifieddata from the new site on the additional processed S-D wafer, where thenew site has new unverified measurement and/or inspection dataassociated therewith; c2) establishing new additional verification datafor the additional processed S-D wafer using the new site on theadditional processed S-D wafer, where the new verification datacomprises new verified measurement and/or inspection data; d2)establishing a new additional confidence value using the new site on theadditional processed S-D wafer using a new additional difference betweenthe new additional unverified data and the new additional verificationdata; e2) establishing a new additional risk factor for the firstunverified S-D procedure using the new additional confidence value, thenew additional difference, the additional confidence value, theadditional difference, the first confidence value, the first difference,or the wafer data, or any combination thereof; f2) establishing a newadditional total risk factor for the first unverified S-D procedureusing the new additional risk factor, the new additional confidencevalue, the new additional difference, the additional risk factor, theadditional confidence value, the additional difference, the first riskfactor, the first confidence value, the first difference, or the waferdata, or any combination thereof; g2) identifying the first unverifiedS-D procedure as a verified procedure having the new additional totalrisk factor associated therewith, decreasing the number of requiredsites by one, and increasing the number of visited sites by one, whenthe new total first risk factor is less than or equal to a newadditional threshold limit; h2) identifying the first unverified S-Dprocedure as an additional unverified procedure having an additionalsecond risk factor associated therewith, decreasing the number ofrequired sites by one, and increasing the number of visited sites byone, when the additional first risk factor is greater than the newadditional threshold; i2) repeating steps a2)-h2) when the number ofrequired additional S-D wafers is greater than zero; and j2) stoppingthe verification of the first wafer when the number of requiredadditional S-D wafers is equal to zero.

When additional required sites on delayed processed S-D wafers are used,one or more of the controllers (114, 119, 124, 129, 134, 139, 144, 149,154, 159, and 195) can also be configured to perform the followingsteps: a3) selecting a site from the number of remaining sites on adelayed processed S-D wafer, wherein the site has a first verificationfeature associated therewith; b3) obtaining delayed unverified data fromthe site on the delayed processed S-D wafer, where the site has delayedunverified measurement and/or inspection data associated therewith; c3)establishing delayed verification data for the delayed processed S-Dwafer using the site on the delayed processed S-D wafer, where thedelayed verification data comprises delayed verified measurement and/orinspection data; d3) establishing a delayed confidence value for thesite on the delayed processed S-D wafer using a delayed differencebetween the delayed unverified data and the delayed verification data;e3) establishing a delayed risk factor for the first unverified S-Dprocedure using the delayed confidence value, the delayed difference,the additional confidence value, the additional difference, the firstconfidence value, the first difference, or the wafer data, or anycombination thereof; f3) establishing a delayed total risk factor forthe first unverified S-D procedure using the delayed risk factor, thedelayed confidence value, the delayed difference, the first risk factor,the first confidence value, the first difference, or the wafer data, orany combination thereof; g3) identifying the first unverified S-Dprocedure as a verified procedure having the delayed total risk factorassociated therewith, decreasing the number of remaining sites by one,and increasing the number of visited sites by one, when the delayedtotal risk factor is less than or equal to a delayed threshold limit;h3) identifying the first unverified S-D procedure as an additionalunverified procedure having an additional second risk factor associatedtherewith, decreasing the number of remaining sites by one, andincreasing the number of visited sites by one, when the delayed totalrisk factor is greater than the additional threshold limit; i3)repeating steps a3)-h3) when the number of remaining delayed S-D wafersis greater than zero; and j3) stopping the verification when the numberof remaining delayed S-D wafers is equal to zero.

In various embodiments, the one or more S-D processing elements caninclude one or more S-D lithography-related processing elements, one ormore S-D scanner-related processing elements, one or more S-Dinspection-related processing elements, one or more S-Dmeasurement-related elements, one or more S-D evaluation-relatedelements, one or more S-D etch-related processing elements, one or moreS-D deposition-related processing elements, one or more S-D thermalprocessing elements, one or more S-D coating-related processingelements, one or more S-D alignment-related processing elements, one ormore S-D polishing-related processing elements, one or more S-Dstorage-related elements, one or more S-D transfer elements, one or moreS-D cleaning-related processing elements, one or more S-D rework-relatedprocessing elements, one or more S-D oxidation-related processingelements, one or more S-D nitridation-related processing elements, orone or more S-D external processing elements, or any combinationthereof.

In addition, the first unverified S-D procedure can be performed inreal-time and can include one or more S-D lithography-relatedprocedures, one or more S-D scanner-related procedures, one or more S-Dinspection-related procedures, one or more S-D measurement-relatedprocedures, one or more S-D evaluation-related procedures, one or moreS-D etch-related procedures, one or more S-D deposition-relatedprocedures, one or more S-D thermal processing procedures, one or moreS-D coating-related procedures, one or more S-D alignment-relatedprocedures, one or more S-D polishing-related procedures, one or moreS-D storage-related procedures, one or more S-D transfer procedures, oneor more S-D cleaning-related procedures, one or more S-D rework-relatedprocedures, one or more S-D oxidation-related procedures, one or moreS-D nitridation-related procedures, or one or more S-D externalprocedures, or any combination thereof.

In some embodiments, the unverified data can include S-D intensity data,S-D transmission data, S-D absorption data, S-D reflectance data, or S-Ddiffraction data, S-D optical properties data, S-D image data, or anycombination thereof. The verification data can include historical data,library data, optical metrology data, imaging data, particle data,CD-scanning electron microscope (CD-SEM) data, transmission electronmicroscope (TEM) data, and/or focused ion beam (FIB) data. The thresholdlimit can include S-D data including goodness of fit data, CD data,accuracy data, wavelength data, sidewall data, particle data, processdata, historical data, or a combination thereof.

In one example, the first set of S-D verification features are createdon the first S-D processed wafer by developing an exposed masking. Inanother example, the first set of S-D verification features are createdon the first S-D processed wafer by etching one or more layers. In otherexamples, the first set of S-D verification features are created on thefirst S-D processed wafer by exposing a deposited masking layer.

In the various embodiments disclosed herein, the wafers can include oneor more layers that can include semiconductor material, carbon material,dielectric material, glass material, ceramic material, metallicmaterial, oxidized material, mask material, or planarization material,or a combination thereof.

In some examples, the lithography-related processing elements canperform mask layer deposition procedures, mask layer exposureprocedures, and/or development procedures that can be S-D and/ornon-S-D, and the evaluation elements can be used to verify mask layerdeposition procedures, mask layer exposure procedures, and/ordevelopment procedures that can be S-D and/or non-S-D.

An S-D transfer sequence can be used to determine the S-D transfersubsystem to use, the number of transfer devices to use, the number oftransfer elements to use, the transfer times, and/or the transferspeeds.

S-D wafer state data can be dependent on the number of required sites,the number of visited (evaluated/completed) site, or the number ofremaining sites, or any combination thereof. S-D process state data canbe dependent on the number of required procedures, the number ofcompleted procedures, or the number of remaining procedures, or anycombination thereof. In some cases, the number of evaluations actuallyperformed can be less than the original number when excellent resultsare obtained at the sites already measured.

A throughput time can be used to determine the number of processingelements required to process the one or more wafers.

When an S-D procedure is verified, the S-D procedure and the dataassociated with the S-D procedure can be stored in a library and/ordatabase.

When a product is being developed, one or more S-D libraries can becreated, refined, updated, and/or used. S-D evaluation libraries caninclude site dependent S-D features, properties, structures, procedures,images, and/or optical data.

The processing system 100 can use S-D creation procedures and/or S-Devaluation procedures to create S-D data for one or more S-D evaluationlibraries.

In some embodiments, one or more wafers can be received by one or moreprocessing elements (112, 117, 122, 127, 132, 142, 147, and 157) coupledto one or more S-D transfer subsystems (101, 102), and the S-D transfersubsystems (101, 102) can be coupled to one or more subsystems (110,115, 120, 125, 130, 135, 140, 145, 150, and 155) in the processingsystem 100. Each wafer can have one or more layers thereon, can havewafer data associated therewith, and the wafer data can includehistorical and/or real-time data.

One or more of the controllers (114, 119, 124, 129, 134, 139, 144, 149,154, 159, and 195) can be configured for receiving wafer data for thefirst set of S-D wafers.

One or more processing elements (112, 117, 122, 127, 132, 142, 147, and157) can perform one or more first S-D creation procedures, wherein afirst set of processed S-D wafers are created that have one or morelibrary-related reference features at a first number of evaluationsites. wafers;

One or more of the controllers (114, 119, 124, 129, 134, 139, 144, 149,154, 159, and 195) can also be configured for establishing S-D waferstate data for each processed S-D wafer, and the S-D wafer state datacan include a number of required creation sites and a number of requiredevaluation sites for each processed S-D wafer, for establishing a firstset of evaluation wafers comprising a first number of the processed S-Dwafers, wherein the first set of evaluation wafers are to be evaluatedusing a first S-D evaluation procedure, for establishing firstoperational states for a plurality of S-D evaluation elements in the oneor more subsystems coupled to the one or more S-D transfer subsystems,for determining a first number of available evaluation elements usingthe first operational states for one or more of the S-D evaluationelements, for establishing a first S-D transfer sequence using the waferdata, the S-D wafer state data, the first number of S-D evaluationwafers, or the first number of available evaluation elements, or anycombination thereof, and for applying a first corrective action when thenumber of S-D evaluation wafers is greater than the first number ofavailable evaluation elements.

The first set of S-D evaluation wafers can be transferred to the firstnumber of available evaluation elements (137, 152) IN the one or moreevaluation subsystem (135, 150) using the first S-D transfer sequencewhen the number of S-D evaluation wafers is less than or equal to thefirst number of available evaluation elements. The one or more of theS-D transfer subsystems (101, 102) can be coupled to the inspectionsubsystem 135 and the evaluation subsystem 150.

In addition, one or more of the controllers (114, 119, 124, 129, 134,139, 144, 149, 154, 159, and 195) can be configured for determining anumber of required evaluation sites for each S-D evaluation wafer usingthe wafer data, data from the first S-D creation procedure, the S-Dwafer state data, or S-D evaluation library creation rules, or anycombination thereof, for selecting a first site from the number ofrequired sites on a first S-D evaluation wafer, wherein the first sitehas a first library-related reference feature associated therewith thatwas created using the first S-D creation procedure, for obtaining firstlibrary-related evaluation data from the first site on the first S-Devaluation wafer, wherein the first site has first library-relatedmeasurement and/or inspection data associated therewith, forestablishing first predicted data for the first site on the first S-Devaluation wafer, wherein the first predicted data comprises predictedmeasurement and/or inspection data, establishing a first confidencevalue for the first site on the first S-D evaluation wafer using a firstlibrary-related difference calculated using the first library-relatedevaluation data and the first predicted data, for establishing a firstrisk factor for the first site on the first S-D evaluation wafer usingthe first confidence value, the first library-related difference, or thewafer data, or any combination thereof, for establishing a first totalrisk factor for the first site on the first S-D evaluation wafer usingthe first risk factor, the first confidence value, the firstlibrary-related difference, or the wafer data, or any combinationthereof, for identifying the first site on the first S-D evaluationwafer as a first verified site having the first total risk factorassociated therewith, decreasing the number of remaining sites by one,increasing the number of visited sites by one, and storing dataassociated with the first site as verified data in a S-D evaluationlibrary, when the first total risk factor is less than or equal to afirst library-related creation limit, and for identifying the first siteas a first unverified site having a second risk factor associatedtherewith, decreasing the number of remaining sites by one, andincreasing the number of visited sites by one, when the first total riskfactor is greater than the first library-related creation limit, whereinthe first verified site has verified library-related data associatedtherewith.

When a S-D evaluation library is created, additional sites on the firstS-D evaluation wafer can be used, and one or more of the controllers(114, 119, 124, 129, 134, 139, 144, 149, 154, 159, and 195) can beconfigured to perform the following steps: a) selecting a new site fromthe number of required sites on the first S-D evaluation wafer, whereinthe new site has a new library-related reference (evaluation) featureassociated therewith that was created using the first S-D creationprocedure; b) obtaining new library-related evaluation data from the newsite on the first S-D evaluation wafer, wherein the new site has newlibrary-related measurement and/or inspection data associated therewith;c) establishing new predicted data for the new site on the on the firstS-D evaluation wafer, wherein the new predicted data comprises newpredicted measurement and/or inspection data; d) establishing a newconfidence value for the new site on the first S-D evaluation waferusing a new library-related difference calculated using the newlibrary-related evaluation data and the new predicted data; e)establishing a new risk factor for the new site on the first S-Devaluation wafer using the new confidence value, the new library-relateddifference, the first confidence value, the first library-relateddifference, or the wafer data, or any combination thereof; f)establishing a new total risk factor for the new site on the first S-Devaluation wafer using the new risk factor, the new confidence value,the new library-related difference, the first risk factor, the firstconfidence value, the first library-related difference, or the waferdata, or any combination thereof; g) identifying the new site on thefirst S-D evaluation wafer as a new verified site having the new totalrisk factor associated therewith, decreasing the number of requiredsites by one, increasing the number of visited sites by one, and storingdata associated with the new site as verified data in the evaluationlibrary, when the new total risk factor is less than or equal to a newlibrary-related creation limit; h) identifying the new site on the firstS-D evaluation wafer as a new unverified site having a new second riskfactor associated therewith, decreasing the number of required sites byone, and increasing the number of visited sites by one, when the newtotal risk factor is greater than the new library-related creationlimit, wherein the new verified site has new verified library-relateddata associated therewith; i) repeating steps a)-h) when the number ofrequired sites is greater than zero; and j) stopping the S-D librarycreation process when the number of required sites is equal to zero.

When a S-D evaluation library is created, additional sites on additionalS-D evaluation wafers can be used, and one or more of the controllers(114, 119, 124, 129, 134, 139, 144, 149, 154, 159, and 195) can also beconfigured to perform the following steps: a1) selecting an additionalS-D evaluation wafer; b1) determining a first number of required sitesfor the additional S-D evaluation wafer; c1) selecting an additionalsite from the first number of required sites on an additional S-Devaluation wafer, wherein the additional site has an additionallibrary-related reference (evaluation) feature associated therewith thatwas created using the first S-D creation procedure; d1) obtainingadditional library-related evaluation data from the additional site onthe additional S-D evaluation wafer, wherein the additional site hasadditional library-related measurement and/or inspection data associatedtherewith; e1) establishing additional predicted data for the additionalsite on the additional S-D evaluation wafer, wherein the additionalpredicted data comprises additional predicted measurement and/orinspection data; f1) establishing an additional confidence value for theadditional site on the additional S-D evaluation wafer using anadditional library-related difference calculated using the additionallibrary-related evaluation data and the additional predicted data; g1)establishing an additional risk factor for the additional site on theadditional S-D evaluation wafer using the additional confidence value,the additional library-related difference, the new confidence value, thenew library-related difference, the first confidence value, the firstlibrary-related difference, or the wafer data, or any combinationthereof; h1) establishing an additional total risk factor for theadditional site on the additional S-D evaluation wafer using theadditional risk factor, the additional confidence value, the additionallibrary-related difference, the new risk factor, the new confidencevalue, the new library-related difference, the first risk factor, thefirst confidence value, the first library-related difference, or thewafer data, or any combination thereof; i1) identifying the additionalsite on the additional S-D evaluation wafer as an additional verifiedsite having the additional total risk factor associated therewith,decreasing the number of required sites by one, increasing the number ofvisited sites by one, and storing data associated with the additionalsite as verified data in the evaluation library, when the additionaltotal risk factor is less than or equal to an additional library-relatedcreation limit; j1) identifying the additional site on the additionalS-D evaluation wafer as an additional unverified site having anadditional second risk factor associated therewith, decreasing thenumber of required sites by one, and increasing the number of visitedsites by one, when the additional total risk factor is greater than theadditional library-related creation limit, wherein the additionalverified site has additional verified library-related data associatedtherewith; k1) repeating steps a1)-j1) when an additional S-D evaluationwafer is available and the number of required sites on the additionalS-D evaluation wafer is greater than zero; and l1) stopping the S-Dlibrary creation process when an additional S-D evaluation wafer is NOTavailable or the number of required sites on the additional S-Devaluation wafer is equal to zero.

In some examples, when a first corrective action is performed, one ormore of the controllers (114, 119, 124, 129, 134, 139, 144, 149, 154,159, and 195) can be configured for determining a first number ofdelayed S-D wafers using a difference between the first number of S-Dprocess wafers and the first number of available processing elements,and one or more transfer elements 104 in the one or more S-D transfersubsystems (101, 102) can be configured for storing and/or delaying thefirst number of delayed wafers for a first period of time.

In another example, when a first corrective action is performed, one ormore of the controllers (114, 119, 124, 129, 134, 139, 144, 149, 154,159, and 195) can be configured for determining a first number ofdelayed S-D wafers using a difference between the first number of S-Devaluation wafers and the first number of available evaluation elements,for determining updated S-D wafer state data for a first delayed S-Devaluation wafer, for determining updated operational state data for theone or more S-D processing elements in the first processing subsystem,for determining a first updated transfer sequence for the first delayedS-D evaluation wafer, for identifying one or more newly-available S-Dprocessing elements using the updated operational state data, and forapplying a second corrective action when the first newly-available S-Devaluation element is NOT available. In addition, one or more transferelements 104 in the one or more S-D transfer subsystems (101, 102) canbe configured for transferring one or more of the delayed wafers usingthe first updated transfer sequence when one or more newly-available S-Devaluation elements become available.

In additional example, corrective actions can include stopping theprocessing, pausing the processing, re-evaluating one or more of the S-Devaluation wafers, re-measuring one or more of the S-D evaluationwafers, re-inspecting one or more of the S-D evaluation wafers,re-working one or more of the S-D evaluation wafers, storing one or moreof the S-D evaluation wafers, cleaning one or more of the S-D evaluationwafers, delaying one or more of the S-D evaluation wafers, or strippingone or more of the S-D evaluation wafers, or any combination thereof.

One set of additional processing steps can include calculating S-Dconfidence maps for the processed S-D wafers, a first S-D confidence mapincluding confidence data for the one or more library-related referencefeatures created at a first number of evaluation sites on each of theprocessed S-D wafers; and establishing the first set of evaluationwafers using the S-D confidence maps for the processed S-D wafers.

A second set of additional processing steps can include calculating S-Dconfidence maps for the processed S-D wafers, a first S-D confidence mapincluding confidence data for the one or more library-related referencefeatures created at a first number of evaluation sites on each of theprocessed S-D wafers; decreasing the number of required evaluation sitesby one or more when one or more values in the first S-D confidence mapare not within a first confidence limit; and increasing the number ofrequired evaluation sites by one or more when one or more values in thefirst S-D confidence map are within the first confidence limit.

A third set of additional processing steps can include calculating S-Drisk assessment maps for the processed S-D wafers, a first S-D riskassessment map including risk assessment data for the one or morelibrary-related reference features created at a first number ofevaluation sites on each of the processed S-D wafers; decreasing thenumber of required evaluation sites by one or more when one or morevalues in the first S-D risk assessment map are not within a firstconfidence limit; and increasing the number of required evaluation sitesby one or more when one or more values in the first S-D risk assessmentmap are within the first confidence limit;

In an alternate embodiment, a first set of non-S-D wafers can bedetermined, these wafers can be processed using a first non-S-Dprocessing sequence, and the first non-S-D processing sequence caninclude one or more non-S-D procedures. The first set of non-S-D waferscan be transferred to one or more first non-S-D processing elements inthe one or more first subsystems using the S-D transfer subsystem, andthe first non-S-D processing sequence can be used to determine the oneor more first non-S-D processing elements in the one or more firstsubsystems.

In some embodiments, the S-D evaluation library data can includegoodness of fit data, creation rules data, S-D measurement data, S-Dinspection data, S-D verification data, S-D map data, S-D confidencedata, S-D accuracy data, S-D process data, or S-D uniformity data, orany combination thereof.

FIG. 2 illustrates an exemplary flow diagram of method for processingwafers using S-D procedures in accordance with embodiments of theinvention. The wafers can include one or more layers that can includesemiconductor material, carbon material, dielectric material, glassmaterial, ceramic material, metallic material, oxidized material, dopedmaterial, implanted material, mask material, or planarization material,or a combination thereof. In some cases, S-D procedures can be usedthroughout the production cycle, and in other cases, S-D procedures canbe used the early stages of the production cycle when the more criticalprocessing steps are performed. In some example, S-D procedures may beused account for mobility differences between NMOS and PMOS structures,to locate test structures, to improve line width roughness and/or lineedge roughness, and to improve overlay problems.

In some examples, wafer data can include real-time data, historicaldata, S-D confidence data, non-S-D confidence data, S-D risk data,non-S-D risk data, S-D limit data, or non-S-D limit data, or anycombination thereof.

In 205, one or more wafers can be received by one or more subsystems(101, 102, 110, 115, 120, 125, 130, 135, 140, 145, 150, and 155) in aprocessing system (100). In some embodiments, one or more of the waferscan be received by one or more transfer subsystems (101, 102) coupled toone or more of the subsystems (101, 102, 110, 115, 120, 125, 130, 135,140, 145, 150, and 155). Alternatively, one or more of the wafers can bereceived by a different subsystem. In addition, a system controller 195can be used to receive the wafer data for the one or more wafers.Alternatively, some of the wafer date may be received by a differentcontroller. The wafer data can include historical and/or real-time data.For example, the wafer data can include S-D and/or non-S-D maps that caninclude wafer-related maps, process-related maps, damage-assessmentmaps, reference maps, measurement maps, prediction maps, risk maps,inspection maps, verification maps, evaluation maps, particle maps,and/or confidence map(s), for one or more wafers. In some cases, a MES180 system can exchange data with the system controller 195 and one ormore of the subsystems (110, 115, 120, 125, 130, 135, 140, 145, 150, and155), and the data can be used to determine and/or control theprocessing sequence and/or the transfer sequences. The exchanged datamay be used to determine which S-D and/or non-S-D procedures to use foreach wafer. The data can include system data, subsystem data, chamberdata, product data, sensor data, and historical data.

The wafers can include S-D wafers and non-S-D wafers. S-D wafer statedata can be established for S-D wafers, and non-S-D wafer state data canbe established for non-S-D wafers.

In 210, S-D processes and/or transfer sequences can be established forthe S-D wafers using the wafer data and the S-D wafer state data.Non-S-D processes and/or transfer sequences can be established for thenon-S-D wafers using the wafer data and the non-S-D wafer state data.Alternatively, other sequences and additional data may be used.

Verification-related sequences can be established for verifying sitesused in S-D procedures, S-D wafers, S-D procedures, and/or S-Dlibraries. Verification-related sequences can include S-D creationprocedures, S-D transfer procedures, S-D verification procedures, S-Devaluation procedures, S-D measurement procedures S-D inspectionprocedures, or any combination thereof. Alternatively, non-S-Dprocedures may be included. One or more S-D wafers can be processedusing one or more process-related procedures and can be verified usingthe process-verification processing sequence.

Sites in S-D procedures can be associated with a gate structure in atransistor, a drain structure in a transistor, a source structure in atransistor, a capacitor structure, a via structure, a trench structure,a two-dimensional memory structure, a three-dimensional memorystructure, a sidewall angle, a bottom critical dimension (CD), a top CD,a middle CD, an array, a periodic structure, an alignment feature, adoping feature, a strain feature, a damaged-structure, or a referencestructure, or any combination thereof.

The S-D processing sequences and/or the non-S-D processing sequences caninclude one or more mask creation procedures, one or more depositionprocedures, one or more coating procedures, one or more etchingprocedures, one or more thermal procedures, one or more implantingprocedures, one or more doping procedures, one or more exposureprocedures, one or more oxidation procedures, one or more nitridationprocedures, one or more ionization procedures, one or more developmentprocedures, one or more lithography procedures, one or morescanner-related procedures, one or more measurement procedures, one ormore inspection procedures, one or more evaluation procedures, one ormore simulation procedures, one or more prediction procedures, one ormore rework procedures, one or more storage procedures, one or moretransfer procedures, one or more loadlock procedures, or one or morecleaning procedures, or any combination thereof.

In some examples, S-D processing sequences can include pre- and/orpost-processing procedures that can be performed using a smaller numberof wafers. The pre- and/or post-processing procedures can be S-D and caninclude processing, evaluation, measurement, inspection, verification,and/or damage-assessment procedures. Alternatively, procedures may benon-S-D. During a product lifetime, the processing sequence can changemany times as the product matures, and the amount of pre-processingand/or post-processing may be different for different wafers and/ordifferent times. Some wafers may be identified as verification,inspection, evaluation, damage-assessment, test, and/or send-aheadwafers, and pre- and/or post-processing procedures can be performed onsome of these wafers. When a product is being developed and/or verified,the process results can be varying, and additional procedures may be canbe performed on a larger number of wafers. For example, when anadditional S-D procedure is required, pre- and/or post-processingprocedures can be performed using a pre-determined number of sites on awafer.

In 215, the number of required creation procedures can be determined foreach S-D wafer using one or more S-D verification-related sequences, thewafer data, the S-D wafer state data, and other data as required. Inaddition, the number of required creation procedures can be determinedfor each non-S-D wafer using one or more non-S-D processing sequences,the wafer data, and the non-S-D wafer state data. Alternatively,additional data may be used.

In some cases, the wafer state data can include the number of requiredprocess-related sites, the number of visited process-related sites, orthe number of remaining process-related sites or any combinationthereof. An S-D creation procedure can be determined for each“to-be-processed” S-D wafer, and the S-D creation procedure can includeone or more process-related procedures. The S-D creation procedure canbe used to identify an S-D processing subsystem and/or the S-Dprocessing elements in a processing subsystem to use.

In 220, the number of required evaluation procedures can be determinedfor each S-D wafer using one or more S-D processing sequences, the waferdata, and the S-D wafer state data. In addition, the number of requiredevaluation procedures can be determined for each non-S-D wafer using oneor more non-S-D processing sequences, the wafer data, and the non-S-Dwafer state data. Alternatively, additional data may be used.

In some cases, the wafer state data can include the number of requiredevaluation-related sites, the number of visited evaluation-relatedsites, or the number of remaining evaluation-related sites or anycombination thereof. A S-D evaluation procedure can be determined for“to-be-evaluated” sites, wafers, procedures, and/or libraries, and theS-D evaluation procedure can include one or more verification,evaluation, measurement, inspection, and/or test procedures. Inaddition, an S-D evaluation procedure can be determined for“to-be-verified” sites, wafers, procedures, and/or libraries. The S-Devaluation subsystems and/or the S-D evaluation elements that are to beused can be identified using an S-D evaluation procedure can be used toidentify a in a verification subsystem to use.

In other cases, the wafer state data can include the number of requiredverification-related sites, the number of visited verification-relatedsites, or the number of remaining verification-related sites or anycombination thereof. A S-D verification procedure can be determined for“to-be-verified” sites, wafers, procedures, and/or libraries, and theS-D verification procedure can include one or more verification,evaluation, measurement, inspection, and/or test procedures. The S-Dverification procedure can be used to identify an S-D verificationsubsystem and/or the S-D verification elements in a verificationsubsystem to use.

In 225, one or more S-D transfer sequences can be established for eachS-D wafer using S-D sequence data, loading data, availability data,operational state data, procedure data, system data, subsystem systemdata, wafer data, or S-D wafer state data, or any combination thereof.In addition, one or more non-S-D transfer sequences can be establishedfor each non-S-D wafer. Alternatively, different data may be used.

In some examples, a first S-D transfer sequence can be determined andcan be used to transfer a first wafer or a first group of wafers. Datafrom a first wafer or a first group of wafers can be used to makedecisions regarding other related wafers. One or more “golden” wafersand/or “golden” chambers may be used during processing. In addition,transfer and/or processing sequences can be used to eliminated and/orreduce “first wafer effects”. S-D transfer sequences can be used todetermine the S-D transfer subsystem to use, the number of transferdevices and/or elements to use, the loading order, the transfer times,and/or the transfer speeds.

When a lithography-related sequence is performed, one or morelithography-related evaluation features can be created at one or morelocations on one or more S-D wafers using a lithography-related creationprocedure, and one or more of the lithography-related evaluationfeatures can be evaluated and/or verified using a lithography-relatedevaluation procedure.

In some examples, a MES (180) can provide one or moreverification-related sequences, one or more process-related sequences,one or more creation procedures, one or more S-D evaluation procedures,or one or more transfer sequences, or any combination thereof. In otherexamples, a MES (180) can provide information that can be used toestablish one or more verification-related sequences, one or moreprocess-related sequences, one or more creation procedures, one or moreS-D evaluation procedures, or one or more transfer sequences, or anycombination thereof.

S-D transfer sequences can be established for internal transfer elementscoupled to an internal S-D delivery element within a subsystem, fortransfer elements coupled to a S-D delivery element within a S-Dtransfer subsystem, for exchanges between transfer elements, exchangesbetween transfer elements and processing elements, exchanges betweentransfer elements and loadlock elements, and exchanges between transferelements and non-S-D subsystems.

In 230, a first set of S-D “processing” wafers can be transferred to oneor more available S-D processing elements in one or more of theprocessing subsystems. Operational state data can be determined for oneor more S-D processing elements in the one or more processingsubsystems, and the operational state data can be used to determine theone or more available S-D processing elements. In some alternate cases,processing can be performed using non-S-D processing elements, andtransfer sequences may be established to allow this processing to occur.

For example, the operational state data for the processing elements caninclude availability data, matching data for the processing elements,expected processing times for some process steps and/or sites,confidence data and/or risk data for the processing elements, confidencedata, and/or risk data for one or more process-related sites.

In some example, real-time operational states can be established for oneor more S-D processing elements in one or more processing subsystem. Afirst number of a set of S-D processing wafers can be transferred to afirst number of the S-D processing elements using the S-D transfersubsystem when the first number of first S-D processing elements isavailable. Other S-D wafers in the set of S-D processing wafers can bedelayed for a first amount of time using the S-D transfer subsystem whenS-D processing elements are not available for the other S-D wafers inthe set of S-D processing wafers. Operational states can change aswafers are transferred into and out of the S-D processing elements.Real-time transfer sequences can be established and used to transferwafers into and out of the first S-D processing elements in thelithography-related subsystem. Updated operational states can beobtained by querying in real-time one or more processing elements,and/or one or more subsystems. Updated loading data can be obtained byquerying in real-time one or more transfer elements, and/or one or moretransfer subsystems.

Delayed wafers can be processed and/or transferred using “delayed”processing sequences and/or “delayed” transfer sequences that caninclude delayed procedures and provide delayed data. For example, when a“newly-available” S-D evaluation element is identified, a delayed S-Devaluation wafer can be transferred to the “newly-available” S-Devaluation element in the one or more evaluation subsystems using a“delayed” transfer sequence.

In 235, a creation procedure can be performed. A verified S-D creationprocedure can be used to create a verified wafer having one or moreverified features and/or structures at one or more sites. An un-verifiedcreation procedure can be used to create an un-verified wafer having oneor more un-verified features and/or structures at one or more sites.Wafer data, processing element, and/or processing subsystem data can beobtained and/or stored before, during, and/or after an S-D and/ornon-S-D creation procedure are performed.

During some creation procedures, output data can be obtained from one ormore process-dependent sites during one or more process steps in the S-Dprocedure, and S-D confidence data can be obtained for one or morewafers by comparing the S-D output data to one or more S-D productrequirements established for a process-dependent site.

In 240, a query can be performed to determine when an additionalcreation procedure is required for the current wafer. When anothercreation procedure is required for the current wafer, procedure 200 canbranch back to 240, and when another creation procedure is not requiredfor the current wafer, procedure 200 can branch to 250.

In 245, a first set of S-D evaluation wafers can be established, and thefirst set of S-D evaluation wafers can include a first number of S-Dwafers.

In 250, one or more of the first set of S-D evaluation wafers can betransferred to one or more available S-D evaluation elements in one ormore of the evaluation subsystems. Operational state data can bedetermined for one or more S-D evaluation elements in the one or moreevaluation subsystems, and the operational state data can be used todetermine the one or more available S-D evaluation elements. In somealternate cases, evaluation can be performed using non-S-D evaluationelements, and transfer sequences may be established to allow thisevaluation to occur. In addition, one or more of the first set of S-Devaluation wafers can be transferred to one or more available S-Devaluation elements in one or more of the inspection subsystems.Operational state data can be determined for one or more S-D evaluationelements in the one or more inspection subsystems, and the operationalstate data can be used to determine the one or more available S-Devaluation elements. In some alternate cases, inspections can beperformed using non-S-D evaluation elements, and transfer sequences maybe established to allow this evaluation to occur.

For example, the operational state data for the evaluation elements caninclude matching data for the evaluation elements, expected evaluationtimes for some evaluation steps and/or sites, confidence data, and/orrisk data for the evaluation elements, confidence data, and/or risk datafor one or more evaluation sites.

In some examples, a transfer sequence can be used to determine how andwhen to transfer a first number of the S-D evaluation wafers to a firstnumber of available evaluation elements, when the first number of theS-D evaluation wafers is less than or equal to the first number ofavailable evaluation elements. One or more corrective actions can beapplied when the first number of the first set of S-D wafers is greaterthan the first number of available evaluation elements, wherein thefirst number of available evaluation elements is determined using thefirst operational states.

In 255, an evaluation wafer can be selected. Evaluation wafers caninclude first wafers, additional wafers, and/or delayed wafers. Theremaining evaluation wafers can be examined. The selection decisions canbe based on the S-D wafer state data, the processing sequence, thenumber of remaining wafers, the number of required evaluation and/orverification sites, the number of visited evaluation and/or verificationsites, or the number of remaining evaluation and/or verification sites,or any combination thereof.

In 260, a site can be selected on the current wafer. In some examples, afirst site can be selected from the number of required sites on a firstS-D evaluation wafer, and the first site can have a first unverifiedevaluation feature associated therewith that was created using the firstS-D creation procedure. One or more additional sites can be selectedfrom the number of required sites on a first S-D evaluation wafer, andthe additional site can have an additional unverified evaluation featureassociated therewith that was created using the first S-D creationprocedure. The first wafer can be one of the most important wafers anddecisions can be made for a group of wafers based on the results fromthe first wafer. In other examples, decisions can be based on data fromadditional wafers and/or delayed wafers.

In 265, an evaluation procedure can be performed using the selectedsite. Evaluation data can be obtained for the site using an S-Devaluation procedure performed using an S-D evaluation element. Forexample, a measurement procedure can provide measurement data, and/or aninspection procedure can provide inspection data.

In some examples, a first site can be selected from the number ofremaining sites on an evaluation and/or verification wafer, and thefirst site can have a first unverified feature associated therewith.First unverified data can be obtained from the first site, and the Firstunverified data for the first site can have first unverified measurementand/or inspection data associated therewith. First verification data canbe established for the first site, and the first verification data caninclude verified measurement and/or inspection data. First confidencedata can be established for the first site using a first differencebetween the first unverified data and the first verification data, and afirst risk data can be established for a first site, wafer, and/orprocedure using the first confidence value. When the first confidencedata is greater than or equal to a first threshold limit, the first sitecan be identified as a first verified site having a first confidencelevel associated therewith, the number of remaining sites can bedecreased by one, and the number of visited sites can be increased byone. When the first confidence data is less than the first thresholdlimit, the first site can be identified as a first unverified sitehaving a second confidence level associated therewith, the number ofremaining sites can be decreased by one, and the number of visited sitescan be increased by one.

In some embodiments, the unverified data can include evaluation data fora gate structure in a transistor, a drain structure in a transistor, asource structure in a transistor, a capacitor structure, a viastructure, a trench structure, a two-dimensional memory structure, athree-dimensional memory structure, a sidewall angle, a criticaldimension (CD), an array, a periodic structure, an alignment feature, adoping feature, a strain feature, a damaged-structure, or a referencestructure, or any combination thereof. In other embodiments, theunverified data can include evaluation data, measurement data,inspection data, alignment data, verification data, process data, waferdata, library data, historical data, real-time data, optical data, layerdata, thermal data, or time data, or any combination thereof.Alternatively, other data may be used.

In some embodiments, the verified data can include verified, predicted,simulated, and/or library data for a gate structure in a transistor, adrain structure in a transistor, a source structure in a transistor, acapacitor structure, a via structure, a trench structure, atwo-dimensional memory structure, a three-dimensional memory structure,a sidewall angle, a critical dimension (CD), an array, a periodicstructure, an alignment feature, a doping feature, a strain feature, adamaged-structure, or a reference structure, or any combination thereof.In other embodiments, the verified data can include evaluation data,measurement data, inspection data, alignment data, verification data,process data, wafer data, library data, historical data, real-time data,optical data, layer data, thermal data, or time data, or any combinationthereof. Alternatively, other data may be used.

In other examples, one or more of the evaluation wafers can beidentified as evaluated and/or verified wafers when one or moreconfidence and/or risk limits are met or corrective action can beapplied if one or more limits are not met.

The historical verification data can include first S-D verified data ina S-D verification library, the first S-D verified data in the S-Dverification library can include first verified structure data andassociated first verified evaluation data, and the first verified signaldata can be characterized by a first S-D set of wavelengths.

The real-time verification data can include verified data obtained inreal-time. For example, real-time verification data can be establishedusing data from one or more wafers that are similar to the wafer, partof the same wafer lot, or from similarly processes wafers, or anycombination thereof. Historical verification data can be stored data.

S-D evaluation features, structures, data, wafers, procedures, and/orimages can be verified, when one or more limits are met. When multiplesites and/or wafers are evaluated, confidence and/or risk data can beestablished for individual wafers and/or groups of wafers.Alternatively, other data may be used. For example, confidence datavalues can range from zero to nine, where zero indicates a failurecondition and nine indicates the most accurate performance. In addition,risk data values can range from zero to nine, where zero indicates afailure or high-risk condition and nine indicates the lowest riskcondition. Alternatively, other range may be used. Ranges can beestablished for the limits to provide for multi-valued confidence dataand/or risk data

When a first (most accurate) threshold limit is met, the item beingevaluated can be identified as having the highest level of confidenceand/or the lowest risk factor associated therewith. When another (lessaccurate) threshold limit is met, the item being evaluated can beidentified as having a lower level of confidence and/or a higher riskfactor associated therewith. When one or more (varying in accuracy)threshold limits are not met, the item being evaluated can be identifiedas an unverified item having a low level of confidence and/or a highrisk factor associated therewith.

In 275, a query can be performed to determine if an additional site isrequired. When an additional site is required, procedure 200 can branchback to step 260, and when an additional site is not required, procedure200 can branch to step 280.

In 280, a query can be performed to determine if an additionalevaluation wafer is required. When an additional evaluation wafer isrequired, procedure 200 can branch back to step 255, and when anadditional evaluation wafer is not required, procedure 200 can branch tostep 285.

In 285, a query can be performed to determine if the current sequencehas been completed. When the current sequence has been completed,procedure 200 can branch back to step 290, and when the current sequencehas not been completed, procedure 200 can branch to step 215.

In 290, a query can be performed to determine if an additional sequenceis required. When an additional sequence is required, procedure 200 canbranch back to step 210, and when an additional sequence is notrequired, procedure 200 can branch to step 295. Procedure can end in295.

In some embodiments, a first double-patterning sequence can be performedfollowed by a second double-patterning sequence. A first set of waferscan be received by one or more subsystems (101, 102, 110, 115, 120, 125,130, 135, 140, 145, 150, and 155) in the processing system (100), andone or more first patterned layers can be created on one or more of thefirst set of patterned wafers using a first S-D DP processing sequence.The first S-D processing sequence can be performed using one or more ofthe subsystems (101, 102, 110, 115, 120, 125, 130, 135, 140, 145, 150,and 155) in the processing system (100). Next, first confidence dataand/or first risk data can be established for the first set of patternedwafers using a first S-D evaluation procedure, and a first set of highconfidence wafers can be established using data from the first S-Devaluation procedure. Then, one or more second patterned layers can becreated on a second set of patterned wafers, and the second set ofpatterned wafers can be created by performing a second S-D processingsequence using the first set of high confidence wafers. The second S-Dprocessing sequence can be performed using one or more of the subsystems(101, 102, 110, 115, 120, 125, 130, 135, 140, 145, 150, and 155) in aprocessing system (100), and the one or more second patterned layers arealigned relative to the one or more first patterned layers using ascanner subsystem (115). In addition, second confidence data and/orsecond risk data can be established for the second set of patternedwafers using a second S-D evaluation procedure, and a second set of highconfidence wafers can be established using the data from the firstand/or second S-D evaluation procedure.

In some embodiments, a first S-D processing sequence can be used tocreate a first damascene layer; and the new S-D processing sequence canbe used to create a second damascene layer.

In various embodiment, the S-D processing sequence can be performed inreal-time and can include one or more S-D lithography-relatedprocedures, one or more S-D scanner-related procedures, one or more S-Dinspection-related procedures, one or more S-D measurement-relatedprocedures, one or more S-D evaluation-related procedures, one or moreS-D etch-related procedures, one or more S-D deposition-relatedprocedures, one or more S-D thermal processing procedures, one or moreS-D coating-related procedures, one or more S-D alignment-relatedprocedures, one or more S-D polishing-related procedures, one or moreS-D storage-related procedures, one or more S-D transfer procedures, oneor more S-D cleaning-related procedures, one or more S-D rework-relatedprocedures, one or more S-D oxidation-related procedures, one or moreS-D nitridation-related procedures, or one or more S-D externalprocedures, or any combination thereof.

FIG. 3 shows a simplified view of a wafer map in accordance withembodiments of the invention. In the illustrated embodiment, a wafer mapis shown having one-hundred twenty-five chip/dies, but this is notrequired for the invention. Alternatively, a different number ofchip/dies may be shown. In addition, the circular shapes shown are forillustration purposes and are not required for the invention. Forexample, the circular wafer may be replaced by a non-circular wafer, andthe chip/dies may have non-circular shapes.

The illustrated view shows a wafer map 320 on a wafer 300 that includesone or more chip/dies 310. Rows and columns are shown that are numberedfrom zero to twelve for illustration. In addition, twelve sites 330labeled (1 a-12 a) can be used to define the location of the sites forthe S-D procedures associated with the illustrated wafer map 320. Inaddition, two circular lines (301 and 302) are shown, and these linescan be used to establish an outer region 305, a mid region 306, and aninner region 307 on the wafer 300. Alternatively, a different number ofregions having different shapes may be established on wafer map 320, anda different number of sites for S-D and/or non-S-D procedures may beestablished at different locations on the wafer. When an S-Dmeasurement, inspection, and/or evaluation plan is created for a wafer,one or more measurement, inspection, and/or evaluation sites can beestablished in one or more wafer areas. For example, when the S-Dstrategy, plan, and/or recipe is created, measurement, inspection,and/or evaluation procedures do not have to include and/or use all ofthe sites 330 shown in FIG. 3.

The S-D procedures can be specified by a semiconductor manufacturerbased on data stored in a historical database. For example, asemiconductor manufacturer may have historically chosen a number ofpositions on the wafer when making SEM measurements and would like tocorrelate the measurement data, inspection data, and/or evaluation datafrom one tool to the data measured using a SEM tool, a TEM tool, and/ora FIB tool.

In addition, the number of sites used in S-D and/or non-S-D procedurescan be reduced as the manufacturer becomes more confident that theprocess is and will continue to produce high quality products and/ordevices.

When new and/or additional measurement data, inspection data, and/orevaluation data is required, additional S-D data can be obtained fromone or more sites on the wafer. For example, measurement features, suchas periodic gratings, periodic arrays, and/or other periodic structures,on a wafer can be measured at one or more of the sites shown in FIG. 3.

The S-D measurement, inspection, and/or evaluation procedures can betime consuming and can affect the throughput of a processing system.During process runs, a manufacturer may wish to minimize the amount oftime used to measure, inspect, verify, and/or evaluate a wafer. The S-Dprocedures can be time-dependent, and different S-D procedures may beselected based on their execution time. A smaller number of sites may beused when execution time are too long.

During a development portion of the semiconductor process, one or moreS-D reference maps can be created and stored for later use. An S-Dreference measurement map can include measured data at measurement sitesthat are different from those shown in FIG. 3. An S-D referenceinspection map can include inspection data at sites that are differentfrom those shown in FIG. 3. An S-D reference verification map caninclude verification data from sites that are different from those shownin FIG. 3. An S-D reference evaluation map can include evaluation datafrom sites that are different from those shown in FIG. 3. Alternatively,a reference map can use the same set of sites or one or more referencemaps may not be required.

In addition, during an S-D procedure, one or more S-D prediction mapscan be created and/or modified, and the S-D prediction maps can includepredicted measured data, predicted inspection data, predictedverification data, and/or predicted evaluation data, and/or predictedprocess data. For example, predicted data can be obtained using an S-Dmodel.

Furthermore, one or more S-D and/or non-S-D confidence maps can becreated and/or modified, and the confidence maps can include confidencevalues for the measured data, the inspection data, the verificationdata, the evaluation data, the predicted data, and/or the process data.

The wafer maps can include one or more Goodness Of Fit (GOF) maps, oneor more grating thickness maps, one or more via-related maps, one ormore Critical Dimension (CD) maps, one or more CD profile maps, one ormore material related maps, one or more trench-related maps, one or moresidewall angle maps, one or more differential width maps, or acombination thereof. The data can also include site result data, sitenumber data, CD measurement flag data, number of measurement sites data,coordinate X data, and coordinate Y data, among others.

In some embodiments, curve-fitting procedures can be performed tocalculate data for the sites on the wafer that are not included in anS-D procedure. Alternatively, the wafer maps may be determined usingsurface estimating, surface fitting techniques, or other mathematicaltechniques. When maps are created for a wafer, the measurement sites canbe chosen based on expected, predicted, and/or actual accuracy valuesand/or requirements.

Some errors that are generated by mapping applications can be sent tothe FDC system, and the FDC system can decide how the processing systemshould respond to the error. Other errors can be resolved by the mappingapplications.

When wafer maps are created and/or modified, values may not becalculated and/or required for the entire wafer, and a wafer map mayinclude data for one or more sites, one or more chip/dies, one or moredifferent areas, and/or one or more differently shaped areas. Forexample, a processing chamber may have unique characteristics that mayaffect the quality of the processing results in certain areas of thewafer. In addition, a manufacturer may allow less accurate processand/or evaluation data for chips/dies in one or more regions of thewafer to maximize yield. A mapping application and/or the FDC system canuse business rules to determine confidence, risk, uniformity, and/oraccuracy limits.

When a value in a map is close to a limit, the confidence value may belower than when the value in a map is not close to a limit. In addition,the accuracy values can be weighted for different chips/dies and/ordifferent areas of the wafer. For example, a higher confidence weightcan be assigned to the accuracy calculations and/or accuracy dataassociated with one or more of the previously used evaluation sites.

In addition, process result, measurement, inspection, verification,evaluation, and/or prediction maps associated with one or more processesmay be used to calculate a confidence map for a wafer. For example,values from another map may be used as weighting factors.

FIG. 4 shows a simplified block diagram of an exemplary subsystem inaccordance with embodiments of the invention. In the illustratedembodiment, an exemplary S-D subsystem 400 is shown that includes fiveS-D elements (410, 420, 430, 440, and 450), a first S-D transfersubsystem 460, and a second S-D transfer subsystem 470. The first S-Dtransfer subsystem 460 can be coupled to a first non-S-D transfersubsystem 401, and to a second non-S-D transfer subsystem 402. Thesecond S-D transfer subsystem 470 can be coupled to the first non-S-Dtransfer subsystem 401, and to the second non-S-D transfer subsystem402. The first non-S-D transfer subsystem 401, and the second non-S-Dtransfer subsystem 402 can be coupled to and/or part of the transfersubsystems (101, 102, 103, FIG. 1). Alternatively, a different number ofsubsystems may be used, a different number of transfer subsystems may beused, and the subsystem may be configured differently. In addition,non-S-D subsystems may be used.

The exemplary S-D subsystem 400 can comprise five S-D loadlock elements(415, 425, 435, 445, and 455) that can be coupled to the first S-Dtransfer subsystem 460, and to the second S-D transfer subsystem 470.Alternatively, a different number of loadlock elements may be used andmay be configured differently. In other embodiments, the loadlockelements may not be required. S-D loadlock element 415 can be coupled toone or more S-D processing elements 410; S-D loadlock element 425 can becoupled to one or more S-D processing elements 420; S-D loadlock element435 can be coupled to one or more S-D processing elements 430; S-Dloadlock element 445 can be coupled to one or more S-D processingelements 440; and S-D loadlock element 455 can be coupled to one or moreS-D processing elements 450. In various embodiments, the S-D loadlockelements (415, 425, 435, 445, and 455) can comprise S-D internaltransfer devices (417, 427, 437, 447, and 457, respectively) fortransferring, delaying, storing, aligning, and/or inspecting one or morewafers at substantially the same time.

The first S-D transfer subsystem 460 can comprise a first S-D deliveryelement 467 that can be coupled to a first number of first S-D transferelements (461, 462, 463, 464, and 465). In some embodiments, a first S-Dtransfer element can be dynamically coupled or decoupled to the firstS-D delivery element 467 and can move in one or more directions 469. Inaddition, the coupling and/or decoupling can be S-D and can bedetermined using the first S-D delivery element 467, a first S-Dtransfer element, wafer data, system data, processing sequence data, ortransfer sequence data, or any combination thereof. The first S-Ddelivery element 467 can include one or more levels (not shown) and canoperate at one or more speeds. Alternatively, other wafer transfertechniques may be used.

Furthermore, the first S-D transfer subsystem 460 and the second S-Dtransfer subsystem 470 can load, carry, and/or unload wafers based on aprocessing sequence, a transfer sequence, operational states, the waferand/or processing states, the processing time, the current time, thewafer data, the number of sites on the wafer, the type of sites on thewafers, the number of required sites, the number of completed sites, thenumber of remaining sites, or confidence data, or any combinationthereof.

Five first S-D transfer elements (461, 462, 463, 464, and 465) are shownin the illustrated embodiment, but this is not required for theinvention. In other embodiments, a different number of first S-Dtransfer elements may be used. In addition, the illustrated first S-Dtransfer elements (461, 462, 463, 464, and 465) are shown at firsttransfer points in FIG. 4, but this is not required for the invention.When a first S-D transfer element is located at a first transfer point,one or more wafers (not shown) can be transferred between a first S-Dtransfer element and an S-D loadlock element.

The second S-D transfer subsystem 470 can comprise a second S-D deliveryelement 477 that can be coupled to a second number of second S-Dtransfer elements (471, 472, 473, 474, and 475). In some embodiments, asecond S-D transfer element can be dynamically coupled or decoupled tothe second S-D delivery element 477 and can move in one or moredirections 479. In addition, the coupling and/or decoupling can be S-Dand can be determined using the second S-D delivery element 477, asecond S-D transfer element, wafer data, system data, processingsequence data, or transfer sequence data, or any combination thereof.The second S-D delivery element 477 can include one or more levels (notshown) and can operate at one or more speeds. Alternatively, other wafertransfer techniques may be used.

Five second S-D transfer elements (471, 472, 473, 474, and 475) areshown in the illustrated embodiment, but this is not required for theinvention. In other embodiments, a different number of second S-Dtransfer elements may be used. In addition, the illustrated second S-Dtransfer elements (471, 472, 473, 474, and 475) are shown at secondtransfer points in FIG. 4, but this is not required for the invention.When a second S-D transfer element is located at a second transferpoint, one or more wafers (not shown) can be transferred between asecond S-D transfer element and an S-D loadlock element.

For example, an S-D processing sequence, and/or an S-D transfer sequencecan be used by the first S-D transfer subsystem 460, and/or the secondS-D transfer subsystem 470 to transfer wafers.

The exemplary S-D subsystem 400 can comprise five controllers (414, 424,434, 444, and 454). The first controller 414 can be coupled to the oneor more first S-D processing elements 410 and can be used to control theone or more first S-D processing elements 410 and the first S-D loadlockelements 415. In addition, the first controller 414 can be coupled 411to the data transfer subsystem (106, FIG. 1). The second controller 424can be coupled to the one or more second S-D processing elements 420 andcan be used to control the one or more second S-D processing elements420 and the second S-D loadlock elements 425. In addition, the secondcontroller 424 can be coupled 421 to the data transfer subsystem (106,FIG. 1). The third controller 434 can be coupled to the one or morethird S-D processing elements 430 and can be used to control the one ormore third S-D processing elements 430 and the third S-D loadlockelements 435. In addition, the third controller 434 can be coupled 431to the data transfer subsystem (106, FIG. 1). The fourth controller 444can be coupled to the one or more fourth S-D processing elements 440 andcan be used to control the one or more fourth S-D processing elements440 and the fourth S-D loadlock element 445. In addition, the fourthcontroller 444 can be coupled 441 to the data transfer subsystem (106,FIG. 1). The fifth controller 454 can be coupled to the one or morefifth S-D processing elements 450 and can be used to control the one ormore fifth S-D processing elements 450 and the fifth S-D loadlockelement 455. In addition, the fifth controller 454 can be coupled 451 tothe data transfer subsystem (106, FIG. 1). Alternatively, a differentnumber of controllers may be used, a different number of processingelements may be used, and the data transfer subsystem may be configureddifferently.

One or more of the controllers (414, 424, 434, 444, and 454) can create,process, modify, send, and/or receive one or more messages in real time.The first S-D transfer subsystem 460 can be coupled 466 to the datatransfer subsystem (106, FIG. 1), and can create, process, modify, send,and/or receive one or more messages in real time. The second S-Dtransfer subsystem 470 can be coupled 476 to the data transfer subsystem(106, FIG. 1) and can create, process, modify, send, and/or receive oneor more messages in real time. Data transfer subsystem 106 can also beused to create, process, modify, send, and/or receive one or moremessages in real time. Messages can include S-D data and/or non-S-Ddata, and the messages can include real-time data and/or historicaldata.

In some embodiments, one or more wafers can be received by the first S-Dtransfer subsystem 460, and/or the second S-D transfer subsystem 470. Aprocessing sequence can be established for the wafer by the system 400.For example, wafer and/or process state data can be used before and/orwhen a wafer is received to establish a processing sequence.Alternatively, a wafer can be received by a processing element.

One or more messages can be processed in real time by one or more of thecontrollers (414, 424, 434, 444, and 454). One or more wafers can beprocessed at substantially the same time by one or more of thesubsystems (410, 420, 430, 440, and 450). One or more messages can beused to determine a processing sequence for each wafer. For example, afirst wafer can be sent to the first processing element 410 using thefirst loadlock element 415; a second wafer can be sent to the secondprocessing element 420 using the second loadlock element 425; a thirdwafer can be sent to the third processing element 430 using the thirdloadlock element 435; a fourth wafer can be sent to the fourthprocessing element 440 using the fourth loadlock element 445; and afifth wafer can be sent to the fifth processing element 450 using thefifth loadlock element 455. In addition, one or more of the messages caninclude wafer data, recipe data, profile data, modeling data, tool data,and/or processing data.

One or more of the controllers (414, 424, 434, 444, and 454) can be usedto determine how and when to process the one or more wafers using theone or more of the S-D processing elements (410, 420, 430, 440, and450). A controller can be used to determine when an S-D processingelement in an S-D subsystem is available and/or when an S-D processingelement in an S-D subsystem is not available. For example, an S-Dmessage and/or data may not be available because of timing issues, and acontroller can wait until the S-D message and/or data is available. Inaddition, when new (updated) S-D data is not available, the wafer can beprocessed using non-updated S-D data.

In some embodiments, establishing a first number of wafers to beprocessed using the first processing sequence can be established. Asecond number of available processing elements in the S-D subsystem canbe identified by querying one or more processing elements in the S-Dsubsystem. For example, an operational state can be determined for eachprocessing element, and first operational state can be a first valuewhen a processing element is available and can be a second value when aprocessing element is not available for the second number of availableprocessing elements.

When the second number is equal to or greater than the first number, thefirst number of wafers can be transferred to the second number ofavailable processing elements in the S-D subsystem. When the secondnumber is less than the first number, one or more corrective actions canbe performed.

The corrective actions can include: 1) processing as many wafers aspossible and storing the remaining wafers; 2) processing as many wafersas possible and processing the remaining wafers as soon as processingelements become available; 3) processing as many wafers as possible andsending one or more of the remaining wafers to another subsystem as soonas processing elements become available in the other subsystem

In some embodiments, a first S-D mask procedure can be performed. Forexample, a mask deposition procedure can be performed using the firstS-D elements 410; an exposure procedure can be performed using thesecond S-D elements 420; a drying and/or inspection procedure can beperformed using the third S-D elements 430; a rework procedure can beperformed using the fourth S-D elements 440; and a development procedurecan be performed using the fifth S-D elements 450. In other examples,other subsystems may be substituted and/or additional subsystems can beused. Other S-D processing sequences can be used to determine thenumber, and/or type of subsystems to use and when to use them.

In additional embodiments, S-D measurement procedures can be performed.S-D processing sequences and/or S-D transfer sequences can beestablished for some wafers using wafer data, and the sequences caninclude S-D measurement procedures. S-D processing sequences and/or S-Dtransfer sequences can be performed using S-D processing elements (410,420, 430, 440, and 450) and transfer subsystems (401, 460, and 470). Forexample, the first non-S-D transfer subsystem 401, and/or the secondnon-S-D transfer subsystem 402 can receive a number of wafers that caninclude S-D and/or non-S-D wafers. A first set of wafers can be receivedby the first S-D transfer subsystem 460 and/or the second S-D transfersubsystem 470.

Each wafer can have wafer data associated therewith, and the wafer datacan include S-D data and/or non-S-D data. One or more of the wafers haveone or more evaluation structures thereon. S-D and/or non-S-D confidencedata can be determined for the wafers, the subsystems, the processingelements, the procedures, or the process result data, or any combinationthereof.

A first set of S-D measurement wafers can be established, and each waferin the first set of S-D measurement wafers can have one or moreevaluation structures thereon. The first set of S-D measurement waferscan be established using the S-D data and/or non-S-D data, and the firstset of S-D measurement wafers can be transferred to one or more the S-Dprocessing elements (410, 420, 430, 440, and 450). For example,confidence data, wafer state data, processing sequence data, orhistorical data may be used.

First S-D measurement procedures can be determined for the first set ofS-D measurement wafers, and the first set of S-D measurement wafersbeing measured in first S-D evaluation element 410 using the first S-Dmeasurement procedures. For example, confidence data, wafer state data,processing sequence data, or historical data may be used to establishthe first S-D measurement procedures.

The first set of S-D measurement wafers can be transferred to one ormore first S-D measurement-related elements 410 in the first S-Dsubsystems 400 using one or more of the S-D transfer subsystems (460,470). A first S-D transfer sequence, a first S-D processing sequence, orthe first S-D measurement procedures, or any combination thereof can beused to determine the one or more first S-D measurement-related elements410. The one or more first S-D measurement-related elements 410 canperform the first S-D measurement procedures.

In some embodiment, a first measurement wafer can be selected from thefirst set of S-D measurement wafers, and the first measurement wafer canhave a first S-D evaluation feature thereon. First measurement data canbe obtained that includes first S-D measured signal data from the firstS-D feature. First S-D best estimate signal data and associated firstS-D best estimate structure can be selected from a library of S-Dmeasurement signals and associated structures. For example, the signalsmay include diffraction signals and/or spectra, refraction signalsand/or spectra, reflection signals and/or spectra, or transmissionsignals and/or spectra, or any combination thereof.

In addition, the S-D evaluation features can include mask structures,etched structures, doped structures, filled structures, semi-filledstructures, damaged structures, dielectric structures, gate structures,gate electrode structures, gate stack structures, transistor structures,FinFET structures, CMOS structures, photoresist structures, periodicstructures, alignment structures, trench structures, or via structures,array structures, grating structures, or any combination thereof.

First S-D differences can be calculated between the first S-D measuredsignal data and the first S-D best estimate signal data, and first S-Dconfidence data can be established for the first measurement wafer usingthe first S-D differences. The first S-D confidence data can be comparedto first S-D product requirements and either the first measurement wafercan be identified as a first high confidence wafer and the processingcan continue if one or more of the first S-D product requirements aremet, or a first corrective action can be applied if one or more of thefirst S-D product requirements are not met.

The S-D measured signal data can be obtained from a S-D evaluationstructure, or from other structures, or any combination thereof;

The first S-D evaluation feature can be identified using the first S-Dbest estimate structure and associated first S-D best estimate signaldata when one or more of the first S-D product requirements are met.

In some embodiments, a first corrective action can include: selectingnew S-D best estimate signal data and associated new S-D best estimatestructure from the library of S-D diffraction signals and associatedstructures; calculating new S-D differences between the first S-Dmeasured signal data and the new S-D best estimate signal data;establishing new S-D confidence data for the first measurement waferusing the new S-D differences; comparing the new S-D confidence data tonew S-D product requirements; and either identifying the firstmeasurement wafer as a new high confidence wafer and continuing theprocessing if one or more of the new S-D product requirements are met,or stopping the selecting, the calculating, the establishing, thecomparing, and the identifying if one or more of the new S-D productrequirements are not met. The first S-D evaluation feature can beidentified using the new S-D best estimate structure and associated newS-D best estimate signal data when the first S-D profile librarycreation criteria is met. Alternatively, other best estimate data may beused, and other comparisons may be made.

In other embodiments, a first corrective action can include: selecting asecond measurement wafer from the first set of S-D measurement wafers,the second measurement wafer having the first S-D evaluation featurethereon; obtaining second measurement data including second S-D measuredsignal data from the first S-D feature; selecting second S-D bestestimate signal data and associated second S-D best estimate structurefrom the library of S-D measurement data [diffraction signals] andassociated structures; calculating second S-D differences between secondS-D measured signal data and the second S-D best estimate signal data;establishing second S-D confidence data for the second measurement waferusing the second S-D differences; comparing the second S-D confidencedata to second S-D product requirements; and either identifying thesecond measurement wafer as a second high confidence wafer andcontinuing the processing if one or more of the second S-D productrequirements are met, or applying a second corrective action if one ormore of the second S-D product requirements are not met.

In still other embodiments, a first corrective action can include:selecting a second S-D evaluation feature on a measurement wafer;obtaining second measurement data including second S-D measured signaldata from the second S-D feature; selecting second S-D best estimatesignal data and associated second S-D best estimate structure from thelibrary of S-D measurement data [diffraction signals] and associatedstructures; calculating second S-D differences between second S-Dmeasured signal data and the second S-D best estimate signal data;establishing second S-D confidence data for the first measurement waferusing the second S-D differences; comparing the second S-D confidencedata to second S-D product requirements; and either identifying thefirst measurement wafer as a second high confidence wafer and continuingthe processing if one or more of the second S-D product requirements aremet, or applying a second corrective action if one or more of the secondS-D product requirements are not met.

In some embodiments, additional corrective actions can include:selecting additional S-D evaluation features on one or more measurementwafers; obtaining additional measurement data including additional S-Dmeasured signal data from the additional S-D feature; selectingadditional S-D best estimate signal data and associated additional S-Dbest estimate structure from the library of S-D measurement data andassociated structures; calculating additional S-D differences betweenthe additional S-D measured signal data and the additional S-D bestestimate signal data; establishing additional S-D confidence data forthe one or more measurement wafers using the additional S-D differences;comparing the additional S-D confidence data to additional S-D productrequirements; and either identifying the one or more measurement wafersas additional high confidence wafers and continuing the processing ifone or more of the additional S-D product requirements are met, orstopping the selecting, the calculating, the establishing, thecomparing, and the identifying if one or more of the additional S-Dproduct requirements are not met.

When new sites are selected, library creation rules can be used.

In other embodiments, a double-patterning processing sequence can beperformed using one or more S-D procedures. A first set of wafers can bereceived by the first S-D transfer subsystem 460 and/or the second S-Dtransfer subsystem 470. The first set of wafers can be transferred toone or more the first S-D elements 410. A first masking layer can bedeposited on each wafer using a first S-D mask deposition procedure, anda first set of high confidence wafers can be established using a firstS-D evaluation procedure. The first set of high confidence wafers can bereceived by the first S-D transfer subsystem 460 and/or the second S-Dtransfer subsystem 470. The first set of high confidence wafers can betransferred to one or more the second S-D elements 420. The maskinglayer on each wafer can be exposed to first patterned radiation using afirst S-D exposure procedure, and a second set of high confidence waferscan be established using a second S-D evaluation procedure. The secondset of high confidence wafers can be received by the first S-D transfersubsystem 460 and/or the second S-D transfer subsystem 470. The secondset of high confidence wafers can be transferred to one or more thethird S-D elements 430. The exposed layer can be developed using an S-Ddevelopment procedure, and a third set of high confidence wafers can beestablished using a third S-D evaluation procedure. The third set ofhigh confidence wafers can be received by the first S-D transfersubsystem 460 and/or the second S-D transfer subsystem 470. The thirdset of high confidence wafers can be transferred to one or more thefourth S-D elements 440. The developed wafers can be etched using an S-Detching procedure, a first set of etched structures can be created inone or more layers on each wafer, and a fourth set of high confidencewafers can be established using a fourth S-D evaluation procedure. Thefourth set of high confidence wafers can be received by the first S-Dtransfer subsystem 460 and/or the second S-D transfer subsystem 470. Thefourth set of high confidence wafers can be transferred to one or morethe fifth S-D elements 450. One or more first materials can be depositedon the etched wafers using a S-D deposition procedure, a first set offilled structures can be created in one or more layers on each wafer,and a fifth set of high confidence wafers can be established using afifth S-D evaluation procedure.

The fifth set of high confidence wafers can be received by the first S-Dtransfer subsystem 460 and/or the second S-D transfer subsystem 470. Thefifth set of high confidence wafers can be transferred to one or morethe first S-D elements 410. A second masking layer can be deposited oneach wafer using a second S-D mask deposition procedure, and a sixth setof high confidence wafers can be established using a sixth S-Devaluation procedure. The sixth set of high confidence wafers can bereceived by the first S-D transfer subsystem 460 and/or the second S-Dtransfer subsystem 470. The sixth set of high confidence wafers can betransferred to one or more the second S-D elements 420. The secondmasking layer on each wafer can be exposed to second patterned radiationusing a second S-D exposure procedure, and a seventh set of highconfidence wafers can be established using a seventh S-D evaluationprocedure. The seventh set of high confidence wafers can be received bythe first S-D transfer subsystem 460 and/or the second S-D transfersubsystem 470. The seventh set of high confidence wafers can betransferred to one or more the third S-D elements 430. The secondexposed layer can be developed using a second S-D development procedure,and an eighth set of high confidence wafers can be established using aneighth S-D evaluation procedure. The eighth set of high confidencewafers can be received by the first S-D transfer subsystem 460 and/orthe second S-D transfer subsystem 470. The eighth set of high confidencewafers can be transferred to one or more the fourth S-D elements 440.The developed wafers can be etched using a second S-D etching procedure,a second set of etched structures can be created in one or more layerson each wafer, and a ninth set of high confidence wafers can beestablished using a ninth S-D evaluation procedure. The ninth set ofhigh confidence wafers can be received by the first S-D transfersubsystem 460 and/or the second S-D transfer subsystem 470. The ninthset of high confidence wafers can be transferred to one or more thefifth S-D elements 450. One or more second materials can be deposited onthe etched wafers using a second S-D deposition procedure, a second setof filled structures can be created in one or more layers on each wafer,and a tenth set of high confidence wafers can be established using atenth S-D evaluation procedure.

The first sets of high confidence wafers can be established by: 1a)obtaining S-D confidence data from one or more mask creation evaluationsites during the first S-D mask creation procedures; 2a) comparing theS-D confidence data for each wafer in the first set of wafers to one ormore confidence requirements established for the one or more maskcreation evaluation sites; and 3a) identifying a wafer in the first setof wafers as a member of the first set of high confidence wafers if afirst mask creation confidence requirement is met.

The second sets of high confidence wafers can be established by: 1b)obtaining S-D confidence (mapping) data from one or more exposuredependent sites during the S-D exposure procedures; 2b) comparing theS-D confidence (mapping) data for each wafer in the first set of highconfidence wafers to one or more confidence (mapping) requirementsestablished for the one or more exposure dependent sites; and 3b)identifying a wafer in the first set of high confidence wafers as amember of the second set of high confidence wafers if a firstexposure-related confidence (mapping) requirement is met.

The third sets of high confidence wafers can be established by: 1c)obtaining S-D confidence (mapping) data from one or more developmentdependent sites during the S-D developing procedures; 2c) comparing theS-D confidence (mapping) data for each wafer in the second set of highconfidence wafers to one or more confidence (mapping) requirementsestablished for the one or more development dependent sites; and 3c)identifying a wafer in the second set of high confidence wafers as amember of the third set of high confidence wafers if a firstdeveloping-related confidence (mapping) requirement is met.

The fourth sets of high confidence wafers can be established by: 1d)obtaining S-D confidence (mapping) data from one or more etch dependentsites during the S-D etching procedures; 2d) comparing the S-Dconfidence (mapping) data for each wafer in the third set of highconfidence wafers to one or more confidence (mapping) requirementsestablished for the one or more etch dependent sites; and 3d)identifying a wafer in the third set of high confidence wafers as amember of the fourth set of high confidence wafers if a firstetching-related confidence (mapping) requirement is met.

The fifth sets of high confidence wafers can be established by: 1e)obtaining S-D confidence (mapping) data from one or more depositiondependent sites during the S-D deposition procedures; 2e) comparing theS-D confidence (mapping) data for each wafer in the fourth set of highconfidence wafers to one or more confidence (mapping) requirementsestablished for the one or more deposition dependent sites; and 3e)identifying a wafer in the fourth set of high confidence wafers as amember of the fifth set of high confidence wafers if a firstdeposition-related confidence (mapping) requirement is met.

Additional sets of high confidence wafers can be established usingsimilar procedures.

The evaluation sites can include process-dependent sites,measurement-dependent sites, inspection-dependent sites, layer-dependentsites wafer-dependent sites, the S-D confidence data can includeconfidence values for S-D (mask creation) data including accuracy data,S-D processing data, S-D measurement data, S-D inspection data, S-Dsimulation data, S-D prediction data, or S-D historical data, or anycombination thereof and the first mask creation confidence requirementcan include confidence data limits for the mask creation data includingaccuracy limits, processing data limits, measurement data limits,inspection data limits, simulation data limits, prediction data limits,and/or historical data limits.

In some additional embodiments, the first non-S-D transfer subsystem401, and/or the second non-S-D transfer subsystem 402 can receive S-Dand/or non-S-D wafers can be included. The S-D wafers can be transferredto the first S-D transfer subsystem 460 and/or the second S-D transfersubsystem 470. The data associated with the wafers can include S-Dconfidence data and/or non-S-D confidence data.

A first set of S-D wafers can be established using the S-D confidencedata and/or non-S-D confidence data, and first S-D processing sequencescan be determined for the first set of S-D wafers. The first set of S-Dwafers can be processed in one or more of the S-D elements (410, 420,430, 440, and 450) using the first S-D processing sequences, and waferstate data can be used to establish the first S-D processing sequences.The first set of S-D wafers can be transferred to one or more S-Dprocessing elements (410, 420, 430, 440, and 450), and the first S-Dprocessing sequence can be used to determine the one or more first S-Dprocessing elements.

In addition, first S-D subsystem processing data can be collectedbefore, during, and/or after the first S-D processing sequences areperformed using the first set of S-D wafers, first S-D confidence datacan be established for one or more wafers in the first set of S-D wafersusing the wafer data and/or the first S-D subsystem processing data. Insome examples, a first S-D confidence value can be established for afirst S-D wafer in the first set of S-D wafers using the first S-Dsubsystem processing data. The first S-D confidence value for the firstS-D wafer can be compared to a first S-D confidence limit. Theprocessing of the first set of S-D wafers can continue, if the first S-Dconfidence limit is met, or a first S-D corrective action can be appliedif the first S-D confidence limit is not met. First S-D correctiveactions can include establishing S-D confidence values for one or moreadditional wafers in the first set of S-D wafers using the first S-Dsubsystem processing data, comparing the S-D confidence values for oneor more of the additional wafers to additional first S-D confidencelimits; and either continuing to process the first set of S-D wafers, ifone or more of the additional first S-D confidence limits are met, orstopping the establishing and the comparing, if one or more of theadditional first S-D confidence limits are not met.

Other sets of S-D wafers can also be established using the S-Dconfidence data and/or non-S-D confidence data, and other S-D processingsequences can be determined for the other sets of S-D wafers. The othersets of S-D wafers can be processed in other S-D subsystems using theother S-D processing sequences, and wafer state data can be used toestablish the other S-D processing sequences. The other sets of S-Dwafers can be transferred to one or more other S-D processing elementsin the other S-D subsystems, and the other S-D processing sequences canbe used to determine the one or more other S-D processing elements. Forexample, the other sets of S-D wafers can be transferred to one or moreS-D processing elements in the one or more other S-D subsystems.

During some wafer processing, a first set of non-S-D wafers can beestablished using the S-D confidence data and/or non-S-D confidencedata, and first non-S-D processing sequences can be determined for thefirst set of non-S-D wafers. In some cases, the first set of non-S-Dwafers can be processed in non-S-D subsystems using the first non-S-Dprocessing sequences, and wafer state data can be used to establish thefirst non-S-D processing sequences. The first set of non-S-D wafers canbe transferred to one or more non-S-D processing elements in the non-S-Dsubsystems, and the first non-S-D processing sequence can be used todetermine the one or more first non-S-D processing elements. Forexample, the first set of non-S-D wafers can be transferred to one ormore non-S-D processing elements in one or more of the other subsystems.

In various embodiments, a non-S-D wafer can be processed in non-S-Dsubsystems using non-S-D processing sequences, or a non-S-D wafer can beprocessed in S-D subsystems using non-S-D processing sequences, or anon-S-D wafer can be processed in non-S-D subsystems using non-S-Dprocessing sequences and wafer state data can be used to establish theprocessing sequences. In addition, non-S-D wafers can be transferredusing non-S-D transfer sequences and/or S-D transfer sequences.Processing sequences can be used to determine transfer sequences.

In addition, first non-S-D subsystem processing data can be collectedbefore, during, and/or after the first non-S-D processing sequences areperformed using the first set of non-S-D wafers, first non-S-Dconfidence data can be established for one or more wafers in the firstset of non-S-D wafers using the wafer data and/or the first non-S-Dsubsystem processing data. In other examples, a first non-S-D confidencevalue can be established for a first non-S-D wafer in the first set ofnon-S-D wafers using the first non-S-D subsystem processing data. Thefirst non-S-D confidence value for the first non-S-D wafer can becompared to a first non-S-D confidence limit. The processing of thefirst set of non-S-D wafers can continue, if the first non-S-Dconfidence limit is met, or a first non-S-D corrective action can beapplied if the first non-S-D confidence limit is not met. First non-S-Dcorrective actions can include establishing non-S-D confidence valuesfor one or more additional wafers in the first set of non-S-D wafersusing the first non-S-D subsystem processing data, comparing the non-S-Dconfidence values for one or more of the additional wafers to additionalfirst non-S-D confidence limits; and either continuing to process thenon-S-D wafers, if one or more of the additional first non-S-Dconfidence limits are met, or stopping the establishing and thecomparing, if one or more of the additional first non-S-D confidencelimits are not met.

Other sets of non-S-D wafers can also be established using the S-Dconfidence data and/or non-S-D confidence data, and other non-S-Dprocessing sequences can be determined for the other sets of non-S-Dwafers. The other sets of non-S-D wafers can be processed in othernon-S-D subsystems using the other non-S-D processing sequences, andwafer state data can be used to establish the other non-S-D processingsequences. The other sets of non-S-D wafers can be transferred to one ormore other non-S-D processing elements in the other non-S-D subsystems,and the other non-S-D processing sequences can be used to determine theone or more other non-S-D processing elements. For example, the othersets of non-S-D wafers can be transferred to one or more processingelements in one or more other subsystems.

The S-D processing sequences and/or the non-S-D processing sequences caninclude one or more coating procedures, one or more etching procedures,one or more thermal procedures, one or more exposure procedures, one ormore oxidation procedures, one or more nitridation procedures, one ormore development procedures, one or more lithography procedures, one ormore scanner-related procedures, one or more measurement procedures, oneor more inspection procedures, one or more evaluation procedures, one ormore simulation procedures, one or more prediction procedures, one ormore rework procedures, one or more storage procedures, one or moretransfer procedures, one or more loadlock procedures, or one or morecleaning procedures, or any combination thereof.

The S-D subsystems and/or the non-S-D subsystems can include one or morecoating subsystems, one or more etching subsystems, one or more thermalsubsystems, one or more exposure subsystems, one or more oxidationsubsystems, one or more nitridation subsystems, one or more developmentsubsystems, one or more lithography subsystems, one or morescanner-related subsystems, one or more measurement subsystems, one ormore inspection subsystems, one or more evaluation subsystems, one ormore simulation subsystems, one or more prediction subsystems, one ormore rework subsystems, one or more storage subsystems, one or moretransfer subsystems, one or more loadlock subsystems, or one or morecleaning subsystems, or any combination thereof.

The S-D processing elements and/or the non-S-D processing elements caninclude one or more coating processing elements, one or more etchingprocessing elements, one or more thermal processing elements, one ormore exposure processing elements, one or more oxidation processingelements, one or more nitridation processing elements, one or moredevelopment processing elements, one or more lithography processingelements, one or more scanner-related processing elements, one or moremeasurement processing elements, one or more inspection processingelements, one or more evaluation processing elements, one or moresimulation processing elements, one or more prediction processingelements, one or more rework processing elements, one or more storageprocessing elements, one or more transfer processing elements, one ormore loadlock processing elements, or one or more cleaning processingelements, or any combination thereof.

FIG. 5 illustrates an exemplary flow diagram of a method for verifyingan S-D feature, an S-D wafer, and/or an S-D procedure in accordance withembodiments of the invention.

In 510, a first set of S-D wafers can be received by one or more S-Dprocessing elements in one or more processing subsystems, and the one ormore S-D processing elements can be coupled to one or more S-D transfersubsystems, and wafer data can be received for the one or more wafers.Alternatively, a wafer can be received by one or more S-D transfersubsystems. The wafer data can include historical and/or real-time data.Wafer state data can be established for one or more of the wafers, andthe wafer state data can include S-D data, chip-dependent data, and/ordie-dependent data.

In 515, an S-D processing sequence can be determined for the S-D wafers.In some cases, different S-D processing sequences can be determined forsome of the S-D wafers. Alternatively, a non-S-D processing sequence maybe established.

In 520, one or more S-D wafers can be processed. In some embodiments, afirst set of unverified S-D wafers can be created by performing a firstS-D creation procedure using the one or more S-D processing elements,and one or more unverified evaluation features can be created at a firstnumber of evaluation sites on each of the unverified S-D wafers. S-Dwafer state data can be established for each unverified S-D wafer, andthe S-D wafer state data can include the number of required creationsites and the number of required evaluation sites for each unverifiedS-D wafer.

In 525, a query can be performed to determine if the one or more S-Dcreation procedures were performed correctly. When the one or more S-Dcreation procedures were performed correctly, procedure 500 can branchto step 530, and when the one or more S-D creation procedures were notperformed correctly, procedure 500 can branch to step 580. For example,tool data, chamber data, particle data, image data, and/or fault datamay be used.

In 580, the wafer can be post-processed using one or more additionalprocedures can include re-measuring, re-evaluating, re-working, and/orremoving the wafer from the processing sequence.

In 545, an S-D wafer can be evaluated using the selected site. In somecases, first wafer-verification data can be obtained from the first siteon the first S-D evaluation wafer. The first wafer-verification data caninclude first S-D measurement data and/or first S-D inspection data thatcan be obtained using S-D measurement procedures performed in S-Dmeasurement elements and/or first S-D inspection procedures performed inS-D inspection elements. Next, first verified data can be establishedfor the first site on the first S-D evaluation wafer, and the firstverified data can include first verified measurement data and/orinspection data that can be obtained from historical and/or real-timedatabases. Then, a first confidence value can be established for thefirst site on the first S-D evaluation wafer using a first wafer-verifydifference, and the first wafer-verify difference can be calculatedusing the first wafer-verification data and the first verified data.

A first risk factor can be established for the first site on the firstS-D evaluation wafer using the first confidence value, the firstwafer-verification difference, or the wafer data, or any combinationthereof, and a first total risk factor can be established for the firstS-D evaluation wafer using the first risk factor, the first confidencevalue, the first wafer-verify difference, or the wafer data, or anycombination thereof.

In 550, a query can be performed to determine if one or more of the S-Devaluation wafers has been verified. When the one or more S-D evaluationwafers have been verified, procedure 500 can branch to step 565, andwhen the one or more S-D evaluation wafers have not been verified,procedure 500 can branch to step 555.

When the first total risk factor is less than or equal to a firstwafer-verification limit; the first S-D evaluation wafer can beidentified as a first verified S-D wafer having the first total riskfactor associated therewith, the number of remaining sites can bedecreased by one, the number of visited sites can be increased by one,and the first S-D creation procedure associated with the first S-Devaluation wafer can be identified as a first verified S-D procedure.

When the first total risk factor is greater than the firstwafer-verification limit, the first site can be identified as a firstunverified site having the first risk factor associated therewith, thenumber of remaining sites can be decreased by one, the number of visitedsites can be increased by one, The first verified S-D evaluation wafercan have verified wafer data associated therewith.

In 555, a query can be performed to determine if an additional site isrequired. When an additional site is required, procedure 500 can branchback to step 540, and when an additional site is not required, procedure500 can branch to step 555.

When an additional site is required for the current wafer, the followingsteps can be performed: a) selecting a new site from the number ofrequired sites on the first S-D evaluation wafer, wherein the new sitehas a new unverified evaluation feature associated therewith that wascreated using the first S-D creation procedure; b) obtaining newwafer-verification data from the new site on the first S-D evaluationwafer, wherein the new wafer-verification data comprises new S-Dmeasurement and/or new S-D inspection data; c) establishing new verifieddata for the new site on the on the first S-D evaluation wafer, whereinthe new verified data includes new verified measurement and/orinspection data; d) establishing a new confidence value for the new siteon the first S-D evaluation wafer using a new wafer-verify differencecalculated using the new wafer-verification data and the new verifieddata; e) establishing a new risk factor for the new site on the firstS-D evaluation wafer using the new confidence value, the newwafer-verify difference, the first confidence value, the firstwafer-verify difference, or the wafer data, or any combination thereof;f) establishing a new total risk factor for the first S-D evaluationwafer using the new risk factor, the new confidence value, the newwafer-verify difference, the first risk factor, the first confidencevalue, the first wafer-verify difference, or the wafer data, or anycombination thereof; g) identifying the first S-D evaluation wafer as afirst verified S-D wafer having the new total risk factor associatedtherewith, decreasing the number of required sites by one, increasingthe number of visited sites by one, and identifying the first S-Dcreation procedure associated with the first S-D evaluation wafer as anew verified S-D procedure, when the new total risk factor is less thanor equal to a new wafer-verification limit; h) identifying the new siteas a new unverified site having a new first risk factor associatedtherewith, decreasing the number of required sites by one, andincreasing the number of visited sites by one, when the new total riskfactor is greater than the new wafer-verification limit, wherein thefirst verified wafer has new verified wafer data associated therewith;i) repeating steps a)-h) when the number of required sites is greaterthan zero; and j) stopping the S-D library creation process when thenumber of required sites is equal to zero.

Alternatively, other procedures may be used.

In 560, a query can be performed to determine if an additionalevaluation wafer is required. When an additional evaluation wafer isrequired, procedure 500 can branch back to step 535, and when anadditional evaluation wafer is not required, procedure 500 can branch tostep 565.

When an additional evaluation wafer is required, the following steps canbe performed: a1) selecting an additional S-D evaluation wafer; b1)determining a first number of required sites for the additional S-Devaluation wafer; c1) selecting an additional site from the first numberof required sites on an additional S-D evaluation wafer, wherein theadditional site has an additional unverified evaluation featureassociated therewith that was created using the first S-D creationprocedure; d1) obtaining additional wafer-verification data from theadditional site on the additional S-D evaluation wafer, wherein theadditional wafer-verification data includes additional S-D measurementdata and/or S-D inspection data; e1) establishing additional verifieddata for the additional site on the additional S-D evaluation wafer,wherein the additional verified data includes additional verifiedmeasurement and/or inspection data; f1) establishing an additionalconfidence value for the additional site on the additional S-Devaluation wafer using an additional wafer-verify difference calculatedusing the additional wafer-verification data and the additional verifieddata; g1) establishing an additional risk factor for the additional siteon the additional S-D evaluation wafer using the additional confidencevalue, the additional wafer-verify difference, the new confidence value,the new wafer-verify difference, the first confidence value, the firstwafer-verify difference, or the wafer data, or any combination thereof;h1) establishing an additional total risk factor for the additional S-Devaluation wafer using the additional risk factor, the additionalconfidence value, the additional wafer-verify difference, the new riskfactor, the new confidence value, the new wafer-verify difference, thefirst risk factor, the first confidence value, the first wafer-verifydifference, or the wafer data, or any combination thereof; i1)identifying the additional S-D evaluation wafer as an additionalverified S-D wafer having the additional total risk factor associatedtherewith, decreasing the number of required sites by one, increasingthe number of visited sites by one, and storing data associated with theadditional site as verified data in the evaluation library, when theadditional total risk factor is less than or equal to an additionalwafer-verification limit; j1) identifying the additional S-D evaluationwafer as an additional unverified site having an additional first riskfactor associated therewith, decreasing the number of required sites byone, and increasing the number of visited sites by one, when theadditional total risk factor is greater than the additionalwafer-verification limit, wherein the additional verified WAFER hasadditional verified WAFER data associated therewith; k1) repeating stepsa1)-j1) when an additional S-D evaluation wafer is available and thenumber of required sites on the additional S-D evaluation wafer isgreater than zero; and l1) stopping the S-D library creation processwhen an additional S-D evaluation wafer is NOT available or the numberof required sites on the additional S-D evaluation wafer is equal tozero.

In 565, a query can be performed to determine if an additional creationwafer is required. When an additional evaluation wafer is required,procedure 500 can branch back to step 515, and processing can proceed asshown in FIG. 5. When an additional creation wafer is not required,procedure 500 can branch to step 570. Procedure 500 can end in 570.

Exemplary first corrective actions can include determining a firstnumber of delayed S-D wafers using a difference between the first numberof S-D evaluation wafers and the first number of available evaluationelements; and storing and/or delaying the first number of delayed S-Dwafers for the first period of time using one or more transfer elementsin the S-D transfer subsystem, wherein the transfer element includesmeans for supporting two or more wafers.

Additional corrective actions can include determining a first number ofdelayed S-D wafers using a difference between the first number of S-Devaluation wafers and the first number of available evaluation elements;determining updated S-D wafer state data for a first delayed S-Devaluation wafer; determining updated operational state data for the oneor more S-D evaluation elements in the first evaluation subsystem;determining a first updated transfer sequence for the first delayed S-Devaluation wafer; identifying one or more newly-available S-D evaluationelements using the updated operational state data; transferring thefirst delayed S-D evaluation wafer to a first newly-available S-Devaluation element in the one or more evaluation subsystems using thefirst updated transfer sequence when a first newly-available S-Devaluation element is available; and applying a second corrective actionwhen the first newly-available S-D evaluation element is NOT available.

Other corrective action can include stopping the processing, pausing theprocessing, re-evaluating one or more of the S-D evaluation wafers,re-measuring one or more of the S-D evaluation wafers, re-inspecting oneor more of the S-D evaluation wafers, re-working one or more of the S-Devaluation wafers, storing one or more of the S-D evaluation wafers,cleaning one or more of the S-D evaluation wafers, delaying one or moreof the S-D evaluation wafers, or stripping one or more of the S-Devaluation wafers, or any combination thereof.

In addition, S-D confidence maps and/or S-D risk assessment maps can beused to verify a wafer.

FIG. 6 illustrates an exemplary flow diagram of a method for creating anS-D evaluation library in accordance with embodiments of the invention.A first set of S-D wafers can be received by one or more S-D processingelements in one or more processing subsystems, and the one or more S-Dprocessing elements can be coupled to one or more S-D transfersubsystems. Each wafer can have wafer data associated therewith, and thewafer data includes historical and/or real-time data. Alternatively, awafer can be received by a different subsystem. Wafer state data can beestablished for one or more of the wafers, and the wafer state data caninclude S-D data, chip-dependent data, and/or die-dependent data. Inaddition, one or more S-D processing sequence can be established for thewafers, and the S-D processing sequences can be established using S-Dwafer state data, chip-dependent wafer state data, and/or die-dependentwafer state data.

Wafer state data can be established for each S-D wafer, and the waferstate data includes a number of required creation sites and a number ofrequired evaluation sites for each S-D wafer.

In 610, a library-creation processing sequence can be established forcreating a library of S-D evaluation data, and the library-creationprocessing sequence can be created using the wafer state data. Thelibrary-creation processing sequence can include an S-D transferprocedure, an S-D creation procedure, or an S-D evaluation procedure, orany combination thereof.

In 620, the first number of S-D process wafers to be processed can bedetermined using a first library-creation processing sequence, and afirst S-D creation procedure and a first S-D evaluation procedure beingcan be determined using the first library-creation processing sequence.

First operational states establishing for a plurality of S-D processingelements in the one or more processing subsystems. The first number ofavailable processing elements can be determined using the firstoperational states for one or more of the S-D processing elements.

A first S-D transfer sequence can be established using the wafer data,the wafer state data, the first number of S-D process wafers, or thefirst number of available processing elements, or any combinationthereof.

In 625, when the first number of S-D process wafers is less than orequal to the first number of available processing elements, The firstnumber of S-D process wafers can be transferred to the first number ofavailable processing elements in the one or more processing subsystemsusing the first S-D transfer sequence. When the first number of S-Dprocess wafers is greater than the first number of available processingelements, a first corrective action can be applied.

In 630, the first S-D creation procedure can be performed, and one ormore library-related reference features can be created at a first numberof evaluation sites on each of the S-D process wafers. Updated waferdata and/or updated wafer state data are created using the first S-Dcreation procedure and the updated wafer state data can include a numberof required evaluation sites for each S-D process wafer.

In 635, a query can be performed to determine if the one or more S-Dcreation procedures were performed correctly. When the one or more S-Dcreation procedures were performed correctly, procedure 600 can branchto step 640, and when the one or more S-D creation procedures were notperformed correctly, procedure 600 can branch to step 690. For example,tool data, chamber data, particle data, image data, and/or fault datamay be used.

In 640, the first number of S-D evaluation wafers to be evaluated can bedetermined using the first S-D evaluation procedure. The number ofrequired evaluation sites can be determined for each S-D evaluationwafer using the updated wafer data, the updated wafer state data, thewafer data, or the wafer state data, or any combination thereof.

The first operational states can be determined for a plurality of S-Devaluation elements in one or more evaluation subsystems, the S-Dtransfer subsystem being coupled to one or more of the S-D evaluationelements.

The first number of available evaluation elements can be determinedusing the first operational states for one or more of the S-D evaluationelements. A second S-D transfer sequence can be established using theupdated wafer data, the updated wafer state data, the wafer data, thewafer state data, the first number of S-D evaluation wafers, or thefirst number of available evaluation elements, or any combinationthereof.

In 645, when the first number of S-D evaluation wafers is less than orequal to the first number of available evaluation elements, The firstnumber of S-D evaluation wafers can be transferred to the first numberof available evaluation elements IN the one or more evaluationsubsystems using the second S-D transfer sequence. When the first numberof S-D evaluation wafers is greater than the first number of availableevaluation elements, a second corrective action can be applied.

In 650, a first site can be selected from the number of required siteson a first S-D evaluation wafer, and the first site can have a firstlibrary-related reference (evaluation) feature associated therewith thatwas created using the first S-D creation procedure.

In 650, an evaluation procedure can be performed. First library-relatedevaluation data can be obtained from the first site on the first S-Dwafer, and the first site has first library-related measurement and/orinspection data associated therewith. First predicted data can beestablished for the first site on the first S-D wafer, and the firstpredicted data can include predicted measurement and/or inspection data.A first confidence value can be established for the first site using afirst library-related difference calculated using the firstlibrary-related evaluation data and the first predicted data. A firstrisk factor can be established for the first site using the firstconfidence value, the first library-related difference, or the waferdata, or any combination thereof. A first total risk factor can beestablished for the first site using the first risk factor, the firstconfidence value, the first library-related difference, or the waferdata, or any combination thereof.

In 660, when the first total risk factor is less than or equal to afirst library-related creation limit, the first site as a first verifiedsite can have the first total risk factor associated therewith, thenumber of remaining sites can be decreased by one, the number of visitedsites can be increased by one, and the data associated with the firstsite can be stored as verified data in an evaluation library. When thefirst total risk factor is greater than the first library-relatedcreation limit, the first site can be identified as a first unverifiedsite having a second risk factor associated therewith, the number ofremaining sites can be decreased by one, and the number of visited sitescan be increased by one. The first verified site can have verifiedlibrary-related data associated therewith.

In 665, a query can be performed to determine if an additional site isrequired. When an additional site is required, procedure 600 can branchback to step 650, and when an additional site is not required, procedure600 can branch to step 670.

When a new site is required for the first wafer, one or more controllerscan use the following steps: a) selecting a new site from the number ofrequired sites on the first S-D evaluation wafer, wherein the new sitehas a new library-related reference feature associated therewith thatwas created using the first S-D creation procedure; b) obtaining newlibrary-related evaluation data from the new site on the first S-Dwafer, wherein the new site has new library-related measurement and/orinspection data associated therewith; c) establishing new predicted datafor the new site on the first S-D wafer, wherein the new predicted datacomprises new predicted measurement and/or inspection data; d)establishing a new confidence value for the new site using a newlibrary-related difference calculated using the new library-relatedevaluation data and the new predicted data; e) establishing a new riskfactor for the new site using the new confidence value, the newlibrary-related difference, the first confidence value, the firstlibrary-related difference, or the wafer data, or any combinationthereof; f) establishing a new total risk factor for the new site usingthe new risk factor, the new confidence value, the new library-relateddifference, the first risk factor, the first confidence value, the firstlibrary-related difference, or the wafer data, or any combinationthereof; g) identifying the new site as a new verified site having thenew total risk factor associated therewith, decreasing the number ofrequired sites by one, increasing the number of visited sites by one,and storing data associated with the new site as verified data in theevaluation library, when the new total risk factor is less than or equalto a new library-related creation limit; h) identifying the new site asa new unverified site having a new second risk factor associatedtherewith, decreasing the number of required sites by one, andincreasing the number of visited sites by one, when the new total riskfactor is greater than the new library-related creation limit, whereinthe new verified site has new verified library-related data associatedtherewith; i) repeating steps a)-h) when the number of required sites isgreater than zero; and j) stopping the S-D library creation process whenthe number of required sites is equal to zero.

In 670, a query can be performed to determine if one or more of the S-Devaluation wafers are required. When the one or more S-D evaluationwafers are required, procedure 600 can branch to step 645, and when theone or more S-D evaluation wafers are not required, procedure 600 canbranch to step 675.

When an additional wafer is used, one or more controllers can use thefollowing steps: a1) selecting an additional site from the number ofrequired sites on an additional S-D evaluation wafer, wherein theadditional site has an additional library-related reference (evaluation)feature associated therewith that was created using the first S-Dcreation procedure; b1) obtaining additional library-related evaluationdata from the additional site on the additional S-D wafer, wherein theadditional site has additional library-related measurement and/orinspection data associated therewith; c1) establishing additionalpredicted data for the additional site on the additional S-D wafer,wherein the additional predicted data comprises additional predictedmeasurement and/or inspection data; d1) establishing an additionalconfidence value for the additional site using an additionallibrary-related difference calculated using the additionallibrary-related evaluation data and the additional predicted data; e1)establishing an additional risk factor for the additional site using theadditional confidence value, the additional library-related difference,the new confidence value, the new library-related difference, the firstconfidence value, the first library-related difference, or the waferdata, or any combination thereof; f1) establishing an additional totalrisk factor for the additional site using the additional risk factor,the additional confidence value, the additional library-relateddifference, the new risk factor, the new confidence value, the newlibrary-related difference, the first risk factor, the first confidencevalue, the first library-related difference, or the wafer data, or anycombination thereof; g1) identifying the additional site as anadditional verified site having the additional total risk factorassociated therewith, decreasing the number of required sites by one,increasing the number of visited sites by one, and storing dataassociated with the additional site as verified data in the evaluationlibrary, when the additional total risk factor is less than or equal toan additional library-related creation limit; h1) identifying theadditional site as an additional unverified site having an additionalsecond risk factor associated therewith, decreasing the number ofrequired sites by one, and increasing the number of visited sites byone, when the additional total risk factor is greater than theadditional library-related creation limit, wherein the additionalverified site has additional verified library-related data associatedtherewith; i1) repeating steps a1)-h1) when an additional S-D evaluationwafer is available and the number of required sites on the additionalS-D evaluation wafer is greater than zero; and j1) stopping the S-Dlibrary creation process when an additional S-D evaluation wafer is NOTavailable or the number of required sites on the additional S-Devaluation wafer is equal to zero.

In addition, delayed S-D evaluation wafer can be processed and/orevaluated at different times. Data from delayed wafers is used as soonas it is available. For example, data from delayed wafers can be fedforward and or fed back to be used in other procedures.

In 675, a query can be performed to determine if an additional creationwafer is required. When an additional creation wafer is required,procedure 600 can branch back to step 615, and processing can proceed asshown in FIG. 6. When an additional creation wafer is not required,procedure 600 can branch to step 680. Procedure 600 can end in 680.

FIG. 7 illustrates an exemplary flow diagram of a method for creating aDual Damascene structure on a wafer using S-D procedures.

In 710, one or more wafers can be received by an S-D transfer subsystem,and wafer data can be received for the one or more wafers.Alternatively, a wafer can be received by a different subsystem. Thewafer data can include historical and/or real-time data. Wafer statedata can be established for one or more of the wafers, and the waferstate data can include S-D data, chip-dependent data, and/ordie-dependent data. In addition, one or more S-D processing sequence canbe established for the wafers, and the S-D processing sequences can beestablished using S-D wafer state data, chip-dependent wafer state data,and/or die-dependent wafer state data.

In a first exemplary embodiment, referring back to FIG. 1, an S-D wafercan be received by one of the S-D transfer subsystems (101, 102) thatcan be coupled to the first lithography subsystem 110. One or morecontrollers (114, 119, 124, 129, 134, 139, 144, 149, 154, 159, and 195)can receive data. In some embodiments, when a wafer is received, thedata associated with the wafer and/or lot can be received, and the datacan include S-D and/or non-S-D data and/or messages. For example, thedata can include S-D maps, such as confidence maps, process maps, riskassessment maps, damage-assessment maps, reference maps, measurementmaps, prediction maps, confidence maps, imaging maps, library-relatedmaps, and/or other wafer-related maps for the in-coming S-D wafer and/orin-coming lot. The data can include data and/or messages from one ormore subsystems associated with the processing system, a host system,and/or another processing system. For example, S-D messages and/or datacan be used to determine and/or control the processing sequence and/orthe transferring sequences.

The data can be processed to obtain wafer data that can includehistorical and/or real-time data. S-D wafer data can also be determinedfor each wafer, and the S-D wafer data can include S-D wafer state dataand S-D confidence data

When additional S-D wafers require processing, the additional S-D waferscan be transferred to additional S-D processing elements in one or moreprocessing subsystems using a S-D transfer subsystem coupled to the oneor more processing subsystem when the first S-D processing element isavailable, and the an additional S-D wafer can be delayed using the S-Dtransfer subsystem coupled to the one or more processing subsystems whenthe first S-D processing element is not available. Transfer elements inthe S-D transfer subsystem can be used to store and/or delay wafers fora period of time.

In 715, one or more S-D processing sequence can be established for eachS-D wafer using the wafer data. Wafer data and/or S-D wafer state datacan be used before and/or when a wafer is received to establish an S-Dprocessing sequence for each S-D wafer. In addition, a first processingsubsystem can be identified for each wafer using the first S-Dprocessing sequence and/or the S-D wafer data. In one example, a firstprocessing sequence can be established for creating a number of etchedfeatures in one or more layer on the wafer.

In the first exemplary embodiment, an S-D Dual Damascene (DD) processingsequence can be established, the S-D DD processing sequence can includea first damascene creation procedure, a first damascene evaluationprocedure, a second damascene creation procedure, and a second damasceneevaluation procedure. A first set of S-D processing wafers can beestablished, and the S-D wafer data can be used to establish the firstset of S-D processing wafers. A first set of S-D processing wafers canbe processed using the first damascene creation procedure.

In 720, un-processed S-D wafers can either be transferred and/ordelayed. A first S-D procedure can be determined for a firstun-processed S-D wafer, and the first S-D procedure can include one ormore process-related procedures. When the first S-D processing elementis available, a first un-processed S-D wafer can be transferred to thefirst S-D processing element in a first processing subsystem using anS-D transfer subsystem coupled to the first processing subsystem. Whenthe first S-D processing element is not available, the firstun-processed S-D wafer can be delayed using the S-D transfer subsystemcoupled to the first processing subsystem.

In the first exemplary embodiment, an S-D transfer sequence can beestablished the first set of S-D processing wafers. Real-timeoperational states can be established for one or more of the first S-Dprocessing elements (112) in the first lithography subsystem (110).Operational states can change as wafers are transferred into and out ofthe S-D processing elements. Real-time transfer sequences can beestablished and used to transfer wafers into and out of the first S-Dprocessing elements (110) in the lithography-related subsystem. Inaddition, internal transfer device 113 can also be used. An S-D transfersequence can be established the first set of S-D processing wafers.Real-time operational states can be established for one or more of thefirst S-D processing elements (112) in the first lithography subsystem(110). Operational states can change as wafers are transferred into andout of the S-D processing elements. Real-time transfer sequences can beestablished and can change with time. When a first number of first S-Dprocessing elements are available, a first number of the first set ofS-D processing wafers can be transferred to the first number of thefirst S-D processing elements (112) in the first lithography subsystem(110) using the S-D transfer subsystem. When first S-D processingelements are not available for the other S-D wafers in the first set ofS-D processing wafers, the other S-D wafers in the first set of S-Dprocessing wafers can be delayed for a first amount of time using theS-D transfer subsystem. When the first set of S-D processing wafers aretransferred, a first S-D transfer sequence can be used. For example, theother S-D wafers in the first set of S-D processing wafers can bedelayed for the first amount of time using one or more transfer elementsin the S-D transfer subsystem. A transfer element can be configured tosupport two or more wafers. The other S-D wafers in the first set of S-Dprocessing wafers can be processed after the first period of time. Whenan S-D wafer is delayed, a new S-D transfer sequence can be established.

When a delayed un-processed S-D wafer has been identified, updated waferstate data can be determined for the delayed un-processed S-D wafer.After a first delay period, updated operational state data can bedetermined for the one or more S-D processing elements in the one ormore processing subsystems, and one or more newly-available S-Dprocessing elements can be identified using the updated operationalstate data. When a newly-available S-D processing element is available,a delayed un-processed S-D wafer can be transferred to the firstnewly-available S-D processing element in the one or more processingsubsystems using an S-D transfer subsystem coupled to the one or moreprocessing subsystems. When the first S-D processing element is notavailable, the first delayed un-processed S-D wafer can be delayed for asecond period of time using one or more S-D transfer subsystems coupledto the processing subsystems. A delayed un-processed S-D wafer can bepost-processed after being delayed for the second period of time, andthe post-processing can include stopping the processing, pausing theprocessing, re-evaluating one or more wafers, re-measuring one or morewafers, re-inspecting one or more wafers, re-working one or more wafers,storing one or more wafers, cleaning one or more wafers, or strippingone or more wafers, or any combination thereof.

One or more of the S-D wafers can be transferred to one or more S-Dprocessing elements in one or more processing subsystems identified byan S-D processing sequence for the wafer. In addition, one or more ofthe S-D wafers can be transferred using S-D transfer sequences.

In 725, one or more of the S-D wafers can be processed in one or moreS-D processing elements in the one or more processing subsystems. Afirst S-D procedure can be used to process a first un-processed S-Dwafer, and the first S-D procedure can include one or moreprocess-related procedures. In alternate embodiments, one or more of thewafers can be processed in non-S-D subsystem. For example, a firstprocedure in the S-D processing sequence can be performed in the firstprocessing subsystem, and an additional procedure in the S-D processingsequence can be performed in an additional subsystem.

When the first S-D verification procedure is performed, a first set ofunverified S-D verification features can be created on the firstverification wafer, and the first set of unverified S-D verificationfeatures can include a first unverified verification feature at a firstsite on the first verification wafer.

When an additional unprocessed S-D wafer has been identified, it can beprocessed using the first S-D procedure. An additional first set ofunverified S-D verification features can be created on the additionalverification wafer, and the additional first set of unverified S-Dverification features can include a first unverified verificationfeature at a first site on each additional verification wafer.

When a delayed unprocessed S-D wafer has been identified, it can beprocessed using the first S-D procedure at a later time. An additionalfirst set of unverified S-D verification features can be created on adelayed verification wafer, and the additional first set of unverifiedS-D verification features can include a first unverified verificationfeature at a first site on each delayed verification wafer.Alternatively, another unverified S-D procedure can be performed usingthe additional unprocessed wafer.

Continuing with the first exemplary embodiment, the first creationprocedure can be performed when the first damascene layer is beingproduced, and the second creation procedure can be performed when thesecond damascene layer is being produced. During the first creationprocedure, a first number of the first set of S-D processing wafers canbe processed using the first damascene creation procedure, and a firstset of processed wafers can be established. The first damascene creationprocedure can be used to create a first set of S-D damascene features onthe first number of the first set of S-D wafers, and the first set ofS-b DAMASCENE features can include one or more verification feature atone or more sites on each of the first set of S-D processing wafers.During the second creation procedure, a first number of a second set ofS-D processing wafers can be processed using the second damascenecreation procedure, and a second set of processed wafers can beestablished. The second damascene creation procedure can be used tocreate a second set of S-D damascene features on the first number of thesecond set of S-D wafers, and the second set of S-D damascene featurescan include one or more second verification feature at one or more siteson each of the second set of S-D processing wafers. During and/or afterthe first creation procedure, a first set of S-D evaluation wafers canbe established, and the first set of S-D evaluation wafers can includeone or more of the first set of processed wafers. In addition, duringand/or after the first creation procedure, a first set of S-D evaluationwafers can be established, and the first set of S-D evaluation waferscan include one or more of the first set of processed wafers.

In 730, one or more of the processed S-D wafers can either betransferred and/or delayed. In various embodiments, processed S-D waferscan be site-verification, procedure-verification, wafer-verification,feature-verification, image-verification, library-verification, orprocess-verification wafers, or any combination thereof. A processed S-Dwafer can be transferred to a S-D evaluation element in one or moreevaluation subsystems using a S-D transfer subsystem coupled to the oneor more evaluation subsystems when the S-D evaluation element isavailable, and the processed S-D wafer can be delayed using the S-Dtransfer subsystem coupled to the one or more evaluation subsystems whena S-D evaluation element is not available.

When a delayed S-D processed wafer has been identified, updated waferdata can be determined for the delayed processed wafer. After a firstdelay period, updated operational state data can be determined for theone or more S-D evaluation elements in the first evaluation subsystem,and one or more newly-available S-D evaluation elements can beidentified using the updated operational state data. When anewly-available S-D evaluation element is available, a delayed,processed, S-D wafer can be transferred to the first newly-available S-Devaluation element in the one or more evaluation subsystems using an S-Dtransfer subsystem coupled to the one or more evaluation subsystems.When the first S-D evaluation element is not available, the firstdelayed, processed, S-D wafer can be delayed for a second period of timeusing one or more S-D transfer subsystems coupled to the firstprocessing subsystem. A delayed processed S-D wafer can bepost-processed after being delayed for the second period of time, andthe post-processing can include stopping the processing, pausing theprocessing, re-evaluating one or more wafers, re-measuring one or morewafers, re-inspecting one or more wafers, re-working one or more wafers,storing one or more wafers, cleaning one or more wafers, or strippingone or more wafers, or any combination thereof. One or more wafers canbe delayed for the one or more periods of time using a transfer elementin the S-D transfer subsystem, and the transfer element can includemeans for supporting two or more wafers.

Continuing further with the first exemplary embodiment, a second S-Dtransfer sequence can be established can be established for each of theS-D wafers in the first set of evaluation wafers. Real-time operationalstates can be established for one or more of the first S-D evaluationelements (152) in the evaluation subsystem (150). Operational states canchange as wafers are transferred into and out of the S-D evaluationelements (152). Real-time transfer sequences can be established and usedto transfer wafers into and out of the first S-D evaluation elements(152) in the evaluation subsystem (150). Alternatively, the S-Devaluation elements (137) in the inspection subsystem (135) can be used.When a first number of first S-D evaluation elements are available, afirst number of the first set of S-D evaluation wafers can betransferred to the first number of the first S-D evaluation elements(152) in the evaluation subsystem (150) using the S-D transfer subsystem(101, 102). When first S-D evaluation elements are not available for theother S-D wafers in the first set of S-D evaluation wafers, the otherS-D wafers in the first set of S-D evaluation wafers can be delayed fora second amount of time using the S-D transfer subsystem (101, 102). Forexample, the other S-D wafers in the first set of S-D evaluation waferscan be delayed for the second amount of time using one or more transferelements (104) in the S-D transfer subsystem (101, 102). A transferelement (104) can be configured to support two or more wafers. The otherS-D wafers in the first set of S-D evaluation wafers can be evaluatedafter the second period of time. A similar set of steps can be used whenthe S-D wafers for the second damascene layer require transferring. Forexample, a third and fourth transfer sequence can be used.

In 735, a query can be performed to determine if the wafer requiresevaluation. When the wafer requires evaluation, procedure 700 can branchto 740, and when the wafer does not require evaluation, procedure 700can branch to 745.

In 740, one or more sites can be selected on one or more of the S-Dwafers. In various embodiments, the site can used in S-D procedures thatcan include site-verification procedures, feature-verificationprocedures, image-verification procedures, library-verificationprocedures, or process-verification procedures, or any combinationthereof. A site can be selected from the number of remaining sites onthe S-D wafer, and the site can have an unverified or verified featureassociated therewith.

In 745, one or more of the processed S-D wafers can be evaluated usingdata from one or more selected sites. For example, the first site can bethe most important site, and some verification decisions can be madeusing just the first site. Confidence data and/or risk assessment datacan be used in the evaluation procedure. For example, one or moreconfidence values can be established for the selected sites usingdifferences between the unverified data and the verification data, andone or more updated risk factors can be established for the S-Dprocedure.

In addition, updated confidence values can be established usingadditional confidence data from additional sites on one or more of thewafers, and total risk factors can be established and updated usingadditional confidence data from additional sites on one or more of thewafers. Other risk assessment data can also be used. In other cases, theverification decisions can be made using confidence values and/or riskfactors from one or more sites on one or more wafers. Confidence valuescan be determined for unprocessed wafers, processed wafers, or delayedwafers, or any combination thereof.

Continuing still further with the first exemplary embodiment, the firstevaluation procedure can be performed when the first damascene layer isbeing evaluated, and the second evaluation procedure can be performedwhen the second damascene layer is being evaluated. During the firstevaluation procedure, one or more S-D first evaluation procedures can beperformed. The first number of the first set of S-D evaluation waferscan be evaluated using the first damascene evaluation procedure, and afirst set of verified wafers can be established. The first damasceneevaluation procedure can be used to evaluate the first set of S-Ddamascene features created on the first set of S-D evaluation wafers,and the first set of S-D damascene features can include one or moreverification feature at one or more sites on each of the first set ofS-D evaluation wafers. During the second evaluation procedure, one ormore S-D second evaluation procedures can be performed. A first numberof the second set of S-D evaluation wafers can be evaluated using thesecond damascene evaluation procedure, and a second set of verifiedwafers can be established. The second damascene evaluation procedure canbe used to evaluate the second set of S-D damascene features created onthe second set of S-D evaluation wafers, and the second set of S-Ddamascene features can include one or more second verification featureat one or more sites on each of the second set of S-D evaluation wafers.

During and/or after the first evaluation procedure, a second set of S-Dprocessing can be established, and the second set of S-D processing caninclude one or more of the first set of verified wafers.

In 745, a query can be performed to determine when additional S-Devaluation wafers are required. When an additional S-D evaluation waferrequires processing, procedure 700 can branch to 740, and when theadditional evaluation wafer is not required, procedure 700 can branch to750.

In 750, a query can be performed to determine when additional S-Dcreation wafers are required. When an additional S-D creation waferrequires processing, procedure 700 can branch to 720, and whenadditional creation wafer is not required, procedure 700 can branch to755. In addition, additional verification data can be obtained from oneor more sites on one or more additional S-D wafers. Additionalconfidence values can be established for the additional sites onadditional S-D wafers. Additional risk factor can also be establishedusing the additional confidence data. Furthermore, when verifying a S-Dprocedure, the data from delayed S-D wafers that were processed at alater time can be evaluated

In 755, a query can be performed to determine when additional S-D and/ornon-S-D procedures are required. When additional S-D and/or non-S-Dprocedures are required, procedure 700 can branch to 715, and whenadditional S-D and/or non-S-D procedures are not required, procedure 700can branch to 760. Procedure 700 can end in 760.

In some multi-step examples, the lithography-related and/orscanner-related processing elements can perform mask layer depositionprocedures, mask layer exposure procedures, and/or developmentprocedures that can be S-D and/or non-S-D, and the S-D evaluationelements can be used to verify mask layer deposition procedures, masklayer exposure procedures, and/or development procedures that can be S-Dand/or non-S-D. In addition, one or more layers can be etched usingetch-related processing elements and the etched features can evaluatedusing one or more S-D evaluation elements

In other multi-step examples, Dual Damascene procedure can be performedon one or more wafers. During a Dual Damascene procedure, a firstdamascene process can be performed followed by a second damasceneprocess. In some embodiments, a Via First Trench Last (VFTL) procedurecan be performed. In other embodiments, a Trench First Via Last (TFVL)procedure can be performed. S-D measurement, inspection, verification,and/or evaluation procedures can be performed before, during, and/orafter a damascene process. Alternatively, one or more non-S-D proceduresmay be required. For example, etched features on a first patterneddamascene layer can be measured after a “via first” or a “trench first”etching procedure is performed. One or more S-D data collection (DC)plans and/or S-D mapping applications can be used. Alternatively,different procedures may be used.

S-D wafer thickness data and/or wafer temperature data can be usedduring lithography procedures to create S-D mask (photoresist) data, tocreate S-D mask post-immersion cleaning and/or drying data, and tocreate S-D mask developing and/or baking data. In addition, S-D waferthickness data and/or wafer temperature data can be used by the etchingsubsystem 140 to create S-D etching and/or ashing data. For example, thedata can include etching chemistry data, etching time data, processinggas ratio data, an expected endpoint time, heater power data, and/or RFpower data. In addition, S-D wafer thickness data and/or wafertemperature data can be used by the thermal processing subsystem 130 tocreate S-D heating and/or cooling data. The S-D wafer thickness dataand/or wafer temperature data can be used by the inspection subsystem135 to create S-D inspection, verification, and/or examination data. Inother examples, S-D wafer thickness data and/or wafer temperature datacan be used by the rework subsystem 155 to create S-D reworkingprocedures.

FIG. 8 illustrates another exemplary flow diagram for creating an S-Devaluation library. In the illustrated procedure 800, a number of stepsare shown. Alternatively, a different number of steps and differentsequences may be used.

In 810, one or more S-D wafers can be received using one or more S-Dtransfer systems. Alternatively, one or more non-S-D wafers may also bereceived. In addition, wafer data can be received for the one or morewafers. The wafer data can include historical and/or real-time data.Alternatively, wafers can be received by different subsystems.

In 815, S-D wafer data and/or non-S-D wafer data can be determined forthe one or more wafers can be received using one or more S-D transfersystem. The wafer data can be used to establish sets of S-D and non-S-Dwafers. In various examples, the S-D wafer data associated with an S-Dwafer can be S-D, chip-dependent, product-dependent, location-dependent,layer dependent, wafer-dependent, or die-dependent, or any combinationthereof. In addition, one or more S-D processing sequence can beestablished for the wafers, and the S-D processing sequences can beestablished using S-D wafer state data, chip-dependent wafer state data,and/or die-dependent wafer state data.

In 820, one or more S-D wafers can be transferred to one or more S-Dprocessing elements using the S-D transfer system.

In 825, one or more processed S-D wafer can be created. A processed S-Dwafer can have one or more S-D library-related features thereon thatwere created at one or more sites using one or more S-D creationprocedures.

In 830, a query can be performed to determine if the one or more S-Dcreation procedures were performed correctly. When the one or more S-Dcreation procedures were performed correctly, procedure 800 can branchto step 835, and when the one or more S-D creation procedures were notperformed correctly, procedure 800 can branch to step 880. For example,tool data, chamber data, and/or fault data may be used.

One or more sets of S-D evaluation wafers can be established using oneor more sets of processed S-D wafers.

In 835, one or more sets of S-D evaluation wafers can be transferred toone or more S-D evaluation elements using the S-D transfer system. Inaddition, one or more other sets of S-D evaluation wafers can be delayedand/or stored using the S-D transfer system.

In 840, one or more S-D evaluation procedures can be performed using oneor more of the S-D evaluation wafers that were transferred to the one ormore S-D evaluation elements. In addition, one or more S-D evaluationprocedures can be performed using one or more of the S-D evaluationwafers that were delayed and then transferred to the one or more S-Devaluation elements when they become available.

During some evaluation procedures, first confidence data can beestablished for a first S-D evaluation wafer by evaluating an S-Dlibrary-related feature at a first site on first S-D evaluation wafer.The first confidence data for first S-D evaluation wafer can be comparedto one or more first confidence limits, and different levels ofconfidence can be associated with different confidence limits.

When a first confidence limit is met, the first library-relatedreference feature can be identified as a high confidence feature havinga first level of confidence associated therewith, the first S-Devaluation wafer can be identified as a high confidence wafer having thefirst level of confidence associated therewith, and the firstlibrary-related evaluation data associated with the high confidencefeature and the first S-D evaluation wafer can be stored in a S-Devaluation library. The high confidence feature and the S-D evaluationwafer can have one or more levels of confidence associated with them.

In 845, a query can be performed to determine if the one or more S-Devaluation procedures were performed correctly. When the one or more S-Devaluation procedures were performed correctly, procedure 800 can branchto step 850, and when the one or more S-D evaluation procedures were notperformed correctly, procedure 800 can branch to step 880. For example,tool data, chamber data, and/or fault data may be used.

In 850, one or more corrective actions can be performed when one or moreconfidence limits are NOT met.

In 855, a query can be performed to determine if an additionalevaluation wafer requires evaluation. When an additional evaluationwafer requires evaluation, procedure 800 can branch to step 835, andwhen an additional evaluation wafer does not require evaluation,procedure 800 can branch to step 860.

In 860, a query can be performed to determine if an additional creationwafer is available for further processing. When an additional creationwafer is available, procedure 800 can branch to step 810, and when anadditional creation wafer is available, procedure 800 can branch to step870. Procedure 800 can end in 870.

In some examples, applying corrective action can include the followingsteps: a) determining a maximum number of evaluation sites on the firstS-D evaluation wafer; b) determining a minimum number of evaluationsites on the first S-D evaluation wafer; c) creating a first confidencemap for the first S-D evaluation wafer; d) determining a required numberof evaluation sites on the first S-D evaluation wafer; e) selecting anew site on the first S-D evaluation wafer; f) establishing newconfidence data for the first S-D evaluation wafer using a new S-Devaluation procedure, wherein a S-D library-related feature at the newsite on first S-D wafer is evaluated; g) adding the new site to thefirst confidence map for the first S-D evaluation wafer; h) comparingthe new confidence data to new first confidence limits for the first S-Devaluation wafer; i) identifying the S-D library-related feature at thenew site on the first S-D evaluation wafer as a new high confidencefeature having a new first level of confidence associated therewith,identifying the first S-D evaluation wafer as a high confidence waferhaving the new first level of confidence associated therewith; andstoring the first library-related evaluation data associated with thenew high confidence feature and the first S-D evaluation wafer in a S-Devaluation library when a new first confidence limit is met; j)identifying the S-D library-related feature at the new site on the firstS-D evaluation wafer as a new unverified feature having the newconfidence data associated therewith, decreasing the number of requiredsites by one, and increasing the number of visited sites by one, whenthe new first confidence limit is NOT met; k) repeating steps e)-j) whenthe number of required sites on the first S-D evaluation wafer isgreater than zero; and l) stopping the evaluation of the first S-Devaluation wafer when the number of required sites on the first S-Devaluation wafer is equal to zero.

In other examples, applying corrective action can include the followingsteps: a1) receiving an additional S-D wafer using the S-D transfersystem; b1) transferring the additional S-D wafer to an additional firstS-D processing element using the S-D transfer system; c1) creating oneor more additional processed S-D wafers, wherein one or more S-Dlibrary-related features are created at one or more sites on eachadditional S-D processed wafer using the first S-D creation procedure;d1) determining an additional S-D evaluation wafer using the additionalprocessed S-D wafers; e1) transferring the additional S-D wafer to anadditional first S-D evaluation element using the S-D transfer system;f1) establishing additional first confidence data for the additional S-Devaluation wafer using an additional first S-D evaluation procedure,wherein a S-D library-related feature at a first site on the additionalS-D evaluation wafer is evaluated; g1) comparing the additional firstconfidence data to additional first confidence limits for the additionalS-D wafer; h1) identifying the S-D library-related feature at the firstsite on the additional S-D evaluation wafer as an additional highconfidence feature having an additional first level of confidenceassociated therewith, identifying the additional S-D evaluation wafer asa high confidence wafer having the new first level of confidenceassociated therewith; and storing the additional library-relatedevaluation data associated with the additional high confidence featureand the additional S-D evaluation wafer in the S-D evaluation librarywhen an additional first confidence limit is met; and i1) applying asecond corrective action when the additional first confidence limit isNOT met.

In addition, applying second corrective action can include the followingsteps: a2) determining a maximum number of evaluation sites on theadditional S-D evaluation wafer; b2) determining a minimum number ofevaluation sites on the additional S-D evaluation wafer; c2) creating afirst confidence map for the additional S-D evaluation wafer; d2)determining a required number of evaluation sites on the additional S-Devaluation wafer; e2) selecting a new site on the additional S-Devaluation wafer; f2) establishing new additional confidence data forthe additional S-D evaluation wafer using an additional new S-Devaluation procedure, wherein a S-D library-related feature at the newsite on the additional S-D wafer is evaluated; g2) adding the new siteto the first confidence map for the additional S-D evaluation wafer; h2)comparing the new additional confidence data to new first confidencelimits for the additional S-D evaluation wafer; i2) identifying the S-Dlibrary-related feature at the new site on the additional S-D evaluationwafer as an additional new high confidence feature having an additionalnew first level of confidence associated therewith, identifying thefirst S-D evaluation wafer as a high confidence wafer having theadditional new first level of confidence associated therewith; andstoring the new additional library-related evaluation data associatedwith the additional new high confidence feature and the additional S-Devaluation wafer in the S-D evaluation library when an additional newfirst confidence limit is met; j2) identifying the S-D library-relatedfeature at the new site on the additional S-D evaluation wafer as anadditional new unverified feature having the new confidence dataassociated therewith, decreasing the number of required sites by one,and increasing the number of visited sites by one, when the additionalnew first confidence limit is NOT met; k2) repeating steps e2)-j2) whenthe number of required sites on the additional S-D evaluation wafer isgreater than zero; and l2) stopping the evaluation of the additional S-Devaluation wafer when the number of required sites is equal to zero.

In some examples, the first site can be one of the most important sitesand decisions can be made based on the results from first site data fromone or more S-D wafers.

Data from S-D and/or non-S-D procedures can be used to change ameasurement, inspection, verification, and/or evaluation process and todetermine when to establish a new measurement, inspection, verification,and/or evaluation site. In addition, when the confidence values are lowin one or more areas of the wafer, or when an error has occurred, one ormore new sites can be established. Furthermore, when the values on aconfidence map are consistently high for a particular process and/orwhen accuracy values are consistently within acceptable limits for aparticular process, a new measurement, inspection, verification, and/orevaluation plan may be establish that uses a smaller number of sites andthat can decrease the throughput time for each wafer.

In some cases, data for an entire wafer can be calculated during an S-Dprocedure. Alternatively, data may be calculated and/or predicted for aportion of the wafer. For example, a portion may include one or moreradial areas and/or quadrants. An error condition can be declared whenone or more of the measured values and/or calculated/predicted valuesare outside an accuracy limit established for the wafer. Some errors canbe eliminated by using an S-D accuracy improvement procedure. Othererrors can be resolved by a subsystem and/or controller.

Some portions of the wafer may have products having different confidencevalues and S-D processing can be used to obtain the maximum amount ofproduct from an S-D wafer at many different stages in the productdevelopment cycle.

Tolerance values and/or limits can be associated with the processresults and/or other maps can be used to identify allowable variationsin one or more processes. In addition, process results and/or other mapscan be used to establish confidence data and/or risk factors for one ormore processes in a process sequence. For example, process resultsand/or other maps may vary in response to chamber cleaning procedures,and S-D procedures can be used to improve and/or eliminate the “firstwafer” problems that can occur after a chamber cleaning.

In some embodiment, the S-D data can include layer fabricationinformation and the layer fabrication information can be different fordifferent layers. New S-D layer data can be obtained during an S-Dprocedure and can be used to update and/or optimize process recipes, canbe used to update and/or optimize process models, and can be used toupdate and/or optimize profile data. In addition, the S-D procedure cansend the new S-D layer data to the controllers in other subsystemsand/or the factory system. For example, the new S-D data can include newwafer thickness data and/or uniformity data.

The S-D procedures can utilize context information such as site ID, chipID, die ID, product ID, subsystem ID, time, wafer ID, slot ID, lot ID,recipe, and/or patterned structure ID as a means for organizing andindexing wafer data.

In addition, S-D modeling procedures can create, refine, and/or use awafer model, an accuracy model, a recipe model, an optical propertiesmodel, a structure model, a FDC model, a prediction model, a confidencemodel, a measurement model, an etching model, a deposition model, afirst wafer effect model, a chamber model, a tool model, a drift model,a delay time model, an electrical performance model, or a device model,or any combination thereof.

The S-D procedures can also use historical data, wafer data, accuracydata, process data, optical properties data, structure data, FDC data,prediction data, confidence data, measurement data, etching data,chamber data, tool data, drift data, electrical performance data, ordevice data, or any combination thereof.

The S-D parameters can include S-D layer information. S-D thickness datamay be provided after a lithography process, and S-D procedures can beused for communicating this information to the scanner subsystem. Inaddition, thickness data may be provided after a deposition process, andS-D procedures can be used for communicating this information to theother subsystems. By feed forwarding S-D wafer data in real-time to ameasurement and/or processing subsystem, improved wafer processing canbe provided. Material variations and/or process variations that affectthe layer thicknesses can change from site-to-site, from wafer to wafer,and from lot to lot. Thickness variation can be due to a depositionprocess not being uniform across the wafer, and this can includechamber-to-chamber variations and chamber drift in processing over time.Thickness variations can cause optical property variations and/orthermal variations to occur. S-D procedures can be used to reduce and/oreliminate these variations.

System and/or subsystem data can comprise non-S-D and/or S-D data thatcan include set-up data, configuration data, historical data, inputdata, output data, priority data, delay data, fault data, response data,error data, feed-forward data, feedback data, pass-through data,internal data, external data, optimization data, status data, timingdata, process results data, and/or measured data.

In some embodiments, the S-D wafer data and/or wafer data can includebottom CD data, middle CD data, top CD data, or angle data, or anycombination thereof. For example, a subsystem can comprise an etchingtool, and the etching tool can use the S-D new wafer and/or processstate data to determine an etching time to use when etching a deeptrench on the wafer, to determine an etching time to use when etching adual damascene structure on the wafer, to determine an etching time touse when etching a gate structure on the wafer. In addition, thereal-time processing data can include a calculated CD, a calculateddepth, and/or a calculated sidewall angle.

An S-D control application can be used to prevent wafers from beingtransferred to a processing element until the processing element isready to accept the wafer. The S-D control application can also be usedto prevent the S-D messages and/or data from being sent until therecipient is ready to use the S-D messages and/or data. S-D controlapplication can use delay time variables to delay wafers, calculations,processes, and/or measurements. For example, delay times can be used toprevent S-D data from arriving before it can be used by calculations,processes, and/or measurements for a wafer. Delay times can bedetermined by using wafer data, sequencing data, control data, and/orhistorical data. Delay time variables can be used by one or more of thecontrollers (114, 119, 124, 129, 134, 139, 144, 149, 154, and 159).

In addition, when judgment and/or intervention rules are associated withS-D procedures, they can be executed. Intervention and/or judgment ruleevaluation procedures and/or limits can be performed based on historicalprocedures, on the customer's experience, or process knowledge, orobtained from a host computer. Rules can be used in S-D FDC proceduresto determine how to respond to alarm conditions, error conditions, faultconditions, and/or warning conditions. The FDC S-D procedures canprioritize and/or classify faults, predict system performance, predictpreventative maintenance schedules, decrease maintenance downtime, andextend the service life of consumable parts in the system.

The subsystem can take various actions in response to an alarm/fault,depending on the nature of the alarm/fault. The actions taken on thealarm/fault can be context-based, and the context can be S-D and can bespecified by a rule, a system/process recipe, a chamber type,identification number, load port number, cassette number, lot number,control job ID, process job ID, slot number and/or the type of data.

One or more S-D simulation applications can be used to compute predicteddata for the wafer based on the input state, the processcharacteristics, and a process model. S-D metrology models can be usedto predict and/or calculate the smaller structures and/or featuresassociated with the design nodes below 65 nm. For example, predictionmodels can include process chemistry models, chamber models, EM models,SPC charts, PLS models, PCA models, FDC models, and MultivariateAnalysis (MVA) models.

As the physical dimensions of the structures decrease, real-time, S-Dprocessing may be required for a large percentage of the wafers toobtain data that are more accurate. In addition, some wafers may be usedto verify a new S-D process and/or to assess an existing S-D process.When a new S-D process is being developed and/or verified, the processresults can be varying, and an assessment or verification procedure canbe performed on a larger percentage of the wafers. When an assessment orverification procedure is performed, an S-D procedure can be used.

An S-D processing sequence can be executed and used to establish whenand how to use the evaluation sites. An S-D processing sequence can bespecified by a semiconductor manufacturer based on data stored in ahistorical database. For example, a semiconductor manufacturer may havehistorically chosen a number of sites on the wafer when making SEMmeasurements and would like to correlate the evaluation data to the datameasured using a SEM tool, TEM tool and/or FIB tool. In addition, thenumber of evaluation sites used can be reduced as the manufacturerbecomes more confident that the process is and will continue to producehigh quality products and/or devices.

An evaluation/inspection/measurement procedure can be time consuming andcan affect the throughput of a processing system. During process runs, amanufacturer may wish to minimize the amount of time used to create andevaluate a wafer. The S-D procedures can be context driven and differentS-D procedures may be performed based on the context of the wafer. Forexample, one or more wafers may not be measured and/or inspected, andS-D procedures may be performed using a subset of evaluation sitesincluded in the evaluation plan.

During a development portion of the semiconductor process, S-D and/ornon-S-D historical data can be created and stored for later use. The S-Dhistorical data can include data at a number of sites.

Before, during, and/or after a procedure is performed, simulation and/orprediction data can be created and/or modified. The simulation and/orprediction data can include S-D data and/or non-S-D data. The newsimulation and/or prediction data can be used in real time to update thecalculations, models, and/or results. In addition, before, during,and/or after a procedure is performed, confidence data can be createdand/or modified for the simulation and/or prediction data.

The S-D historical data can include GOF data, thermal data, thicknessdata, via-related data, CD data, CD profile data, material related data,trench-related data, sidewall angle data, differential width data, orany combination thereof. The data can also include site result data,site number data, CD measurement flag data, number of measurement sitesdata, coordinate X data, and coordinate Y data, among others.

S-D procedures can be used by a subsystem to adjust recipes and/ormodels in real-time to process three-dimensional structures, such asmemory structures, dual-damascene structures, trenches, vias, andmulti-gate transistors. In addition, S-D procedures can be used bysubsystems to adjust evaluation, inspection, verification, and/ormeasurement recipes and/or models in real-time to evaluate, inspect,verify, and/or measure three-dimensional structures. Thethree-dimensional structures can increase the S-D sensitivity ofthickness variations and require structure modeling and/or measurementsin multiple directions. Evaluation subsystems can cause throughputproblems and higher measurement throughput can be obtained by adjustingthe sampling locations, and structures dynamically in S-D procedures.

In an S-D semiconductor processing system, multiple processing and/ormeasurement tools can be present and tool matching can be a criticalissue. In some cases, data from internal tools must be matched with datafrom external and/or reference tools. S-D procedures can be used fordata matching between tools and can be used to create the calibrationadjustments needed by a subsystem. These adjustments can be made as R2Rcalculations.

One or more S-D procedures can be used to enable two-way communicationsfor exchanging S-D data and for handshaking. S-D procedures can querythe subsystems, controllers, and/or S-D procedures for current statusand configuration. S-D procedures can be used to communicate withmultiple devices in a subsystem by separating the unique parameters foreach device and by distributing the information to each device. Forexample, S-D parameters can be sent to the controllers, processingtools, metrology tools, OES tools, RF sensors, cameras, optical sensors,CCDs, endpoint detectors, temperature sensors, and depth sensors.

When the wafer is processed in a subsystem using the S-D data, theprocessed wafer can be identified as a processed S-D wafer by changingthe wafer state data for the wafer; and the processing data associatedwith the wafer can be identified and/or stored as new S-D processingdata. When the wafer is processed in a subsystem using the non-S-D data,the processed wafer can be identified as a processed non-S-D wafer bychanging the wafer state data for the wafer; and the processing dataassociated with the wafer can be identified and/or stored as new non-S-Dprocessing data.

The wafer data can include modeling data for the processed wafer thatcan be created, enhanced, and/or modified in the subsystem. When S-Dmodeling data is used, a new models and associated model parameters canbe identified and stored as S-D models and data. When non-S-D data isused, the models and associated model parameters can be identified andstored as non-S-D models and data. For example, the S-D models and datacan be stored in an S-D library and/or database, and the non-S-D modelsand data can be stored in a non-S-D library and/or database. When asimulation is performed using S-D or non-S-D data, the simulation modeland/or simulation data can be identified and/or stored.

S-D procedures can create, use, change, and/or verify wafer profiledata. For example, as dimensions get smaller S-D wafer profile data canhave a greater impact during aligning, measuring, and/or processing andthe wafer profile data can include radius data, curvature data, featuredata, temperature data, and/or thickness data.

In some subsystems, the S-D, and/or non-S-D wafer data can be used todetermine a contaminant level, a contamination probability, and/or anout-gassing rate. In other subsystems, nozzle position during adeposition procedure, and/or a probe position during an alignment and/ormeasurement procedure can be determined. The amount of energy radiatedby the wafer in a chamber can be determined. For example, the opticalelements, nozzles, and/or probes used may be position-sensitive,location-sensitive, site-sensitive, and/or temperature-sensitive. Inaddition, the optical properties for the wafer and/or a calibrationfactor for the optical properties can be determined. For example, thecharacteristics of a processed masking, and/or material layer can bedetermined.

The system data can comprise wafer state information, locationinformation, measurement information, vendor information, designinformation, chip layout information, library information, toolinformation, or searching information, or any combination thereof.

In some embodiments, one or more subsystems can receive one or morewafers and the associated wafer data. The subsystem can comprise anumber of processing elements for processing the one or more wafers atsubstantially the same time. For example, an inspection subsystem caninclude two or more inspection elements/modules for inspecting the oneor more wafers at substantially the same time. The controller associatedwith the subsystem can use an S-D process sequence to determine whichwafer is processed by each processing element. The transfer elementsinternal to and/or external from the subsystem can be used to moveand/or store wafers. In addition, one or more processing elements in oneor more subsystems can be used to process one or more wafer innon-real-time. A current wafer can be identified for each processingelement, wafer data can be established for each wafer, and the waferdata can include real-time and/or historical wafer data. A processingsequence can include internal and/or external procedures in which awafer can be sent to an external measurement and/or processing tool.Other wafers in a wafer lot can be sent to other subsystems or other IMtools.

Still other embodiments of the invention provide a method of creating aS-D image library, and the method can comprise obtaining a first S-Dinspection image from a first S-D feature in and/or on a patternedmasking layer, the first S-D feature being formed at a firstpre-determined site on the wafer, and a S-D inspection subsystemgenerates the first S-D inspection image; calculating a first S-Dsimulated image that corresponds to a hypothetical image of the firstS-D feature; calculating a first difference between the S-D inspectionimage and the first S-D simulated image; comparing the first differenceto a first S-D image creation criteria; and either identifying the firstS-D feature using the hypothetical image and storing in a S-D inspectionimage library the first S-D inspection image and associated site data,if the first S-D image creation criteria is met or applying a firstcorrective action if the first S-D image creation criteria is not met.

In addition, one or more additional procedures can be performed. Whenadditional procedures are performed, additional processing data can becreated. In some embodiments, a new S-D message and/or data may not beavailable because of timing issues.

In some embodiments, a wafer can be processed by one or more lithographysubsystems using one or more S-D procedures and S-D wafer thickness datacan be generated in real time by the one or more lithography subsystems.Then the wafer can be transferred to an etching subsystem and one ormore of the lithography subsystems can send S-D messages and/or data tothe etching subsystem. The etching subsystem can receive and process theS-D messages and can extract the S-D wafer thickness data. The etchingsubsystem can use the S-D wafer thickness data to establish S-D etchingdata that can include an etching recipe, an etching time, and/or anetching chemistry. Next, the etching subsystem can etch the wafer usingthe S-D etching data. In addition, when S-D layer thickness data isprovided to an etching tool, the calculation time can be reduced and theaccuracy can be improved.

Accuracy values can be determined for S-D and/or non-S-D proceduresand/or results, the accuracy values can be compared to accuracy limits,and refinement procedures can be performed if the accuracy values do notmeet the accuracy limits. Alternatively, other procedures can beperformed, other sites can be used, or other wafers can be used.

When a refinement procedure is used, the refinement procedure canutilize bilinear refinement, Lagrange refinement, Cubic Splinerefinement, Aitken refinement, weighted average refinement,multi-quadratic refinement, bi-cubic refinement, Turran refinement,wavelet refinement, Bessel's refinement, Everett refinement,finite-difference refinement, Gauss refinement, Hermite refinement,Newton's divided difference refinement, osculating refinement, orThiele's refinement algorithm, or a combination thereof.

In some embodiments, a completion time and/or execution time candetermined for the S-D and/or non-S-D procedures. The completion timeand/or execution time can be compared to a measurement and/or processingstart time to determine if there is enough time to establish the updatedrecipe. The wafer can be measured and/or processed using the updatedmeasurement recipe if the completion time and/or execution time are lessthan the processing start time, or the wafer can be measured using anon-updated measurement recipe if the completion time and/or executiontime are not less than the processing start time.

S-D processing sequences can change with time. When an S-D processingsequence is being developed, the throughput can be less than desiredbecause the confidence values are lower and the risk factors are higherfor new processes and additional measurement steps can be required toraise the confidence values and lower the risk factors. When wafers aremeasured using separate and/or external measurement tools, additionaltime is required.

When S-D systems, subsystems, and/or procedures are developed, stableS-D procedures are first developed and then the stable S-D procedurescan be optimized. S-D procedures can be used during processstabilization, process enhancement, and process optimization.

During a stabilization sequence, one or more additional S-D measurementsteps can be used to raise confidence values and/or decrease riskfactors before an optimization sequence is established. Delay times canbe used to wait for S-D data before performing a process.

One or more S-D measurements can be performed before the etching processis performed to obtain S-D data for a patterned mask layer that can beused to compare with the S-D data from a patterned etched layer. Inaddition, S-D measurements can be made after a deposition process, andthese S-D measurements can provide S-D thickness data, uniformity data,and/or optical properties data that can be fed forward in real-time asS-D data or historical data. S-D wafer data can be obtained fromprocessing tools, measurement tools, alignment tools, transfer tools,inspection tools, and/or pattern recognition tools.

In some fabrication environments, S-D procedures can provide S-D datathat was previously unavailable; can provide faster processing; canprovide a more complete understanding of a process, can replacedestructive methods; can provide higher confidence wafers, can provide afaster transfer rate, can improve uniformity, can reduce the number ofwafers at risk, and can provide shorter reaction times to process and/ortool excursions.

As noted above, current manufacturing methodology and factory designused for integrated circuits require many tools located as stand aloneplatforms or grouped in general areas, usually separated by a distanceof 2000 feet or more. Facilities to run these tools must therefore alsobe widely distributed throughout the factory. Typical functions requiredby these platforms are substrate coating (Adhesion, BARC, TARC, Resist,Top Coat), bake (post apply bake and post exposure bake) imaging(exposure), metrology (overlay, critical dimension, defect and filmthickness), pre and post exposure cleaning using in immersionprocessing, etch (defining the pattern in the underling thin films) andpost etch clean-up (polymer and other byproduct removal). Technologiestargeting sub 32 nm gate lengths will require many of these operationsto be repeated to complete a single active layer of the semiconductordevice i.e. double BARC, double or triple patterning, double or tripleimaging, etc. In order to move the integrated circuits between thesemanufacturing “islands”, FOUPs (Forward Opening Unified Pods) are usedto move the ICs between the separate platforms.

In order to speed the process and provide better produced 300 mm, 450 mmor other diameter wafers, the entire manufacturing process includingcoat, bake, exposure, develop, all inspection, etch, post etch clean,wafer scrap and wafer rework can ideally be completed in a singleplatform which is controlled by common control software within thesingle platform and includes feed forward and/or feed backward APC(Advanced Process Control) on post etch results that can be linked tothe very first process step. The APC enables post etch CD (criticaldimension), overlay and defect information to be evaluated and actedupon almost immediately by feeding data forward (to educate futureprocesses for the same wafer) or by feeding data backward (to educatethe current process for the current wafer or to educate the currentprocess for future wafers).

In addition, the feed forward and/or feed backward APC system andassociated S-D transfer subsystems may be used with site-specifictechnology. For instance, an S-D transfer subsystem can be used totransfer a wafer to a particular processing element, and APC adjustmentscould be made for a specific site of the wafer. In addition,manufacturing processes and transfer sequences can be developed based onthe site specific information gathered from the processes performed onthe specific site of the wafer.

Further, the manufacturing processes and transfer sequences can bedeveloped and perfected using “send ahead” wafers (i.e. process andevaluate one complete wafer before committing the lot) with minimalimpact to FAB (fabrication plant) utilization, something that isimpossible with conventional processes without a large loss of FABproductivity. For example, using S-D transfer sequences, a “Send ahead”wafer can be processed through etch and inspect, while the main lot isprocessed upstream. This allows adjustment of upstream manufacturingprocesses with minimal impact to the overall throughput.

Thus, wafers from thin film processing (or other upstream processes) canenter at one end of the platform and good, finished wafers can exit theother end. In other words, FOUP's will deliver wafers for processing atone end and new FOUP's will receive at the other end. In contrast to thesystem using manufacturing “islands” described above, the intermediatedelivery FOUP's will no longer be necessary after all wafers have beenloaded into the photolithography system.

In order to complete these necessary processes, the platform may includea number of modules containing all the necessary equipment to processwafers from adhesion to post etch clean inspection. Each module may beremovable and replacement is not required in order for a tool to be“rebooted”. This will facilitate repair and minimize lost productivitytime due to unplanned module level tool issues. In addition, the basicblock design with removable modules will allow sufficient space forspecialized sub assemblies (modules) to be added or removed as requiredwithout long down times and expensive removal and re-installation of thetool.

As the wafer moves between modules, the wafer can be managed by robotson a rail type system. The robots used to move wafers can comprise adouble or triple pincette balanced system that rotates on a centralaxis. These robots that move wafers from location to location can moveon rails on either side of the scanner allowing for fast cycle time andall possible configurations of process steps achieving improved processversatility. The “side transport” system can thus enable wafers toeasily travel from post develop IM back to the start of the coat processfor multiple lithography (double patterning or lithography) or rework,allowing increased utilization of the exposure tool. In addition,multiple patterning can be enabled with the “side transport” system suchthat a single wafer can be moved from post develop IM back to the inputof the photolithography system for multiple lithography. Wafersrequiring rework may also be handled this way if a rework process isavailable in the pre-lithography part of the photolithography system.Thus, wafers do not have to be reloaded into the FOUP and moved fromtool to tool by either people or overhead automation, reducing waferlevel defectivity.

The use of the above described rail system can also result in that thesystem does not have to process wafers sequentially. The modules thatmake up the entire process can be grouped with one or more robotsservicing the set of modules. In addition, lots do not have to wait forrework or scrap wafers. Good wafers can be processed to the end of theline, while “child lots” of rework wafers can be created, processed andcaught up to the main lot after etch. This same concept can be used tocull scrapped wafers from the primary lot without delaying the goodwafers in the main lot. Rework of non-compliant wafers may be immediateand automated. Thus, the entire manufacturing, inspection and controlfunctions can be incorporated into a single tool with a common softwarethat controls monitors the output and adjusts process inputs in realtime.

In one embodiment the present invention there are included modulescontaining all the necessary equipment to process wafers from adhesionto post etch clean inspection. The modules do not have to lie outsequentially as is illustrated in FIG. 9.

As shown in FIG. 9, wafers from thin film processing (or other upstreamprocesses) enter at a first end and, verified, completed wafers exit theother end. For instance, modules 1 and 3 may include resist spinners,bake plates, pre-immersion clean processes. Module 2 may manage highout-gassing chemistries to minimize defectivity. If so, Module 2 wouldcontain a “dirty” bake process, one that could contaminate the wafers.Accordingly, the present invention can allow these “dirty” processes tobe isolated from the rest of the tool, lowering defectivity andminimizing possible contamination. Airborne particle counters can beestablished in the wafer path and critical process areas to monitorambient defect levels. Detection could then enact alarm conditions.Further, the robot wafer handlers could ride a multiple rail type systemfrom wafer entrance to scanner found in Module 4. The scanner could haveits own internal wafer handler. Wafers would then be picked-up afterexposure by another robot on a multiple rail system to modules 5 and 6for post immersion clean, PEB, BWEE and developing. The wafers couldthen go to IM module 7 (Imaging module) for overlay, defect and criticaldimension check.

At this point the wafers can be reworked if they fail, scrapped if theycannot be reworked, sent back via overheard handling or a single wafer“side track” for double or triple patterning. Also APC adjustments tophotolithography system PAB, PEB, scanner or develop processes can bemade based on the metrology results at this point. However, APCadjustments and site specific APC adjustments may also be made at anypoint in the processing. For instance, in the present example, althoughIM module 7 is the first module that images the wafer informationregarding the wafer and specific sites on the wafer can be gleaned fromany step in the process. For example, the scanner found in module 4 canprovide information regarding the process performed on the wafer orinformation regarding the process performed on certain sites of thewafer. Thus, the APC adjustments can be made according to certain siteson the wafer and can be made using information from various sources inthe process.

In addition, the etch process may be carried out in its own internalhandler (module 8). Also included are the post etch cleaner (module 9)and the final IM tool (module 10). The final IM would contain criticaldimension, defect and overlay features as required. Good and bad waferscan be sorted at this point. True, full APC can be implemented with thepost etch critical dimension data driving resist photolithography systemPAB, PEB, exposure tool or photolithography system developer recipes.

Although only certain embodiments of this invention have been describedin detail above, those skilled in the art will readily appreciate thatmany modifications are possible in the embodiments without materiallydeparting from the novel teachings and advantages of this invention.Accordingly, all such modifications are intended to be included withinthe scope of this invention.

Thus, the description is not intended to limit the invention and theconfiguration, operation, and behavior of the present invention has beendescribed with the understanding that modifications and variations ofthe embodiments are possible, given the level of detail present herein.Accordingly, the preceding detailed description is not mean or intendedto, in any way, limit the invention—rather the scope of the invention isdefined by the appended claims.

1. A method of processing a plurality of wafers comprising: receivingthe plurality of wafers by a processing system, the processing systemincluding Site-Dependent (S-D) and Non-Site-Dependent (N-S-D)subsystems, each wafer having wafer data associated therewith, whereinthe wafer data includes S-D confidence data and/or N-S-D confidencedata; establishing a first set of S-D wafers using the S-D confidencedata and/or N-S-D confidence data; determining first S-D processingsequences for the first set of S-D wafers, the first set of S-D wafersbeing processed in first S-D subsystems using the first S-D processingsequences, wherein wafer state data is used to establish the first S-Dprocessing sequences; transferring the first set of S-D wafers to one ormore first S-D processing elements in the first S-D subsystems, thefirst S-D processing sequences being used to determine the one or morefirst S-D processing elements; collecting first S-D subsystem processingdata before, during, and/or after the first S-D processing sequences areperformed using the first set of S-D wafers; establishing first S-Dconfidence data for one or more wafers in the first set of S-D wafersusing the wafer data and/or the first S-D subsystem processing data;establishing additional sets of S-D wafers using the first S-Dconfidence data, the S-D confidence data, or the N-S-D confidence data,or any combination thereof; and transferring the additional sets of S-Dwafers to one or more additional S-D processing elements in additionalsubsystems, with additional S-D processing sequences being used todetermine the one or more additional S-D processing elements.
 2. Themethod of claim 1, further comprising: establishing a first set of N-S-Dwafers using the S-D confidence data and/or N-S-D confidence data;determining first N-S-D processing sequences for the first set of N-S-Dwafers, the first set of N-S-D wafers being processed in first N-S-Dsubsystems using the first N-S-D processing sequences, wherein waferstate data is used to establish the first N-S-D processing sequences;and transferring the first set of N-S-D wafers to one or more firstN-S-D processing elements in the first N-S-D subsystems, the first N-S-Dprocessing sequences being used to determine the one or more first N-S-Dprocessing elements.
 3. The method of claim 2, further comprising:establishing other sets of N-S-D wafers using the S-D confidence dataand/or N-S-D confidence data; determining other N-S-D processingsequences for the other sets of N-S-D wafers, the other sets of N-S-Dwafers being processed in other N-S-D subsystems using the other N-S-Dprocessing sequences, wherein wafer state data is used to establish theother N-S-D processing sequences; and transferring the other sets ofN-S-D wafers to one or more other N-S-D processing elements in the otherN-S-D subsystems, the other N-S-D processing sequences being used todetermine the one or more other N-S-D processing elements.
 4. The methodof claim 3, further comprising: collecting other N-S-D subsystemprocessing data before, during, and/or after the other N-S-D processingsequences are performed using the other sets of N-S-D wafers;establishing other N-S-D confidence data for one or more wafers in theother sets of N-S-D wafers using the wafer data and/or the othersubsystem N-S-D processing data; establishing additional sets of N-S-Dwafers using the other N-S-D confidence data, the S-D confidence data,or the N-S-D confidence data, or any combination thereof; andtransferring the additional sets of N-S-D wafers to one or moreadditional N-S-D processing elements in additional subsystems, withadditional N-S-D processing sequences being used to determine the one ormore additional N-S-D processing elements.
 5. The method of claim 4,wherein the establishing other N-S-D confidence data comprises:establishing a first N-S-D confidence value for a first N-S-D wafer inthe other sets of N-S-D wafers using the other N-S-D subsystemprocessing data; comparing the first N-S-D confidence value for thefirst N-S-D wafer to a first N-S-D confidence limit; and eithercontinuing to process the other sets of N-S-D wafers when the firstN-S-D confidence limit is met, or applying a first N-S-D correctiveaction when the first N-S-D confidence limit is not met.
 6. The methodof claim 5, wherein the applying a first N-S-D corrective actioncomprises: establishing N-S-D confidence values for one or moreadditional wafers in the other sets of N-S-D wafers using the otherN-S-D subsystem processing data; comparing the N-S-D confidence valuesfor one or more of the additional wafers in the other sets of N-S-Dwafers to additional first N-S-D confidence limits; and eithercontinuing to process the other sets of N-S-D wafers, when one or moreof the additional first N-S-D confidence limits are met, or stopping theestablishing and the comparing, when one or more of the additional firstN-S-D confidence limits are not met.
 7. The method of claim 2, furthercomprising: collecting first N-S-D subsystem processing data before,during, and/or after the first N-S-D processing sequences are performedusing the first set of N-S-D wafers; establishing first N-S-D confidencedata for one or more wafers in the first set of N-S-D wafers using thewafer data and/or the first subsystem N-S-D processing data;establishing additional sets of N-S-D wafers using the first N-S-Dconfidence data, the S-D confidence data, or the N-S-D confidence data,or any combination thereof; and transferring the additional sets ofN-S-D wafers to one or more additional N-S-D processing elements inadditional subsystems, with additional N-S-D processing sequences beingused to determine the one or more additional N-S-D processing elements.8. The method of claim 7, wherein the establishing first N-S-Dconfidence data comprises: establishing a first N-S-D confidence valuefor a first N-S-D wafer in the first set of N-S-D wafers using the firstN-S-D subsystem processing data; comparing the first N-S-D confidencevalue for the first N-S-D wafer to a first N-S-D confidence limit; andeither continuing to process the first set of N-S-D wafers when thefirst N-S-D confidence limit is met, or applying a first N-S-Dcorrective action when the first N-S-D confidence limit is not met. 9.The method of claim 8, wherein the applying a first N-S-D correctiveaction comprises: establishing N-S-D confidence values for one or moreadditional wafers in the first set of N-S-D wafers using the first N-S-Dsubsystem processing data; comparing the N-S-D confidence values for oneor more of the additional wafers to additional first N-S-D confidencelimits; and either continuing to process the first set of N-S-D wafers,when one or more of the additional first N-S-D confidence limits aremet, or stopping the establishing and the comparing, when one or more ofthe additional first N-S-D confidence limits are not met.
 10. The methodof claim 1, further comprising: establishing other sets of S-D wafersusing the S-D confidence data and/or N-S-D confidence data; determiningother S-D processing sequences for the other sets of S-D wafers, theother sets of S-D wafers being processed in other S-D subsystems usingthe other S-D processing sequences, wherein wafer state data is used toestablish the other S-D processing sequences; and transferring the othersets of S-D wafers to one or more other S-D processing elements in theother S-D subsystems, the other S-D processing sequences being used todetermine the one or more other S-D processing elements.
 11. The methodof claim 10, further comprising: collecting other S-D subsystemprocessing data before, during, and/or after the other S-D processingsequences are performed using the other sets of S-D wafers; establishingother S-D confidence data for one or more wafers in the other sets ofS-D wafers using the wafer data and/or the other S-D subsystemprocessing data; establishing additional sets of S-D wafers using theother S-D confidence data, the S-D confidence data, or the N-S-Dconfidence data, or any combination thereof; and transferring theadditional sets of S-D wafers to one or more additional S-D processingelements in additional subsystems, with additional S-D processingsequences being used to determine the one or more additional S-Dprocessing elements.
 12. The method of claim 11, wherein theestablishing other S-D confidence data comprises: establishing a firstS-D confidence value for a first S-D wafer in the other sets of S-Dwafers using the other S-D subsystem processing data; comparing thefirst S-D confidence value for the first S-D wafer to a first S-Dconfidence limit; and either continuing to process the other sets of S-Dwafers when the first S-D confidence limit is met, or applying a firstS-D corrective action when the first S-D confidence limit is not met.13. The method of claim 12, wherein the applying a first S-D correctiveaction comprises: establishing S-D confidence values for one or moreadditional wafers in the other sets of S-D wafers using the other S-Dsubsystem processing data; comparing the S-D confidence values for oneor more of the additional wafers in the other sets of S-D wafers toadditional first S-D confidence limits; and either continuing to processthe other sets of S-D wafers, when one or more of the additional firstS-D confidence limits are met, or stopping the establishing and thecomparing, when one or more of the additional first S-D confidencelimits are not met.
 14. The method of claim 1, wherein the establishingfirst S-D confidence data comprises: establishing a first S-D confidencevalue for a first S-D wafer in the first set of S-D wafers using thefirst S-D subsystem processing data; comparing the first S-D confidencevalue for the first S-D wafer to a first S-D confidence limit; andeither continuing to process the first set of S-D wafers when the firstS-D confidence limit is met, or applying a first S-D corrective actionwhen the first S-D confidence limit is not met.
 15. The method of claim14, wherein the applying a first S-D corrective action comprises:establishing S-D confidence values for one or more additional wafers inthe first set of S-D wafers using the first S-D subsystem processingdata; comparing the S-D confidence values for one or more of theadditional wafers to additional first S-D confidence limits; and eithercontinuing to process the first set of S-D wafers, when one or more ofthe additional first S-D confidence limits are met, or stopping theestablishing and the comparing, when one or more of the additional firstS-D confidence limits are not met.
 16. The method of claim 1, whereinthe first S-D processing sequences include at least one of one or morecoating procedures, one or more etching procedures, one or more thermalprocedures, one or more exposure procedures, one or more oxidationprocedures, one or more nitridation procedures, one or more developmentprocedures, one or more lithography procedures, one or morescanner-related procedures, one or more measurement procedures, one ormore inspection procedures, one or more evaluation procedures, one ormore simulation procedures, one or more prediction procedures, one ormore rework procedures, one or more storage procedures, one or moretransfer procedures, one or more loadlock procedures, or one or morecleaning procedures, or any combination thereof.
 17. The method of claim1, wherein the first S-D subsystems include at least one of one or morecoating subsystems, one or more etching subsystems, one or more thermalsubsystems, one or more exposure subsystems, one or more oxidationsubsystems, one or more nitridation subsystems, one or more developmentsubsystems, one or more lithography subsystems, one or morescanner-related subsystems, one or more measurement subsystems, one ormore inspection subsystems, one or more evaluation subsystems, one ormore simulation subsystems, one or more prediction subsystems, one ormore rework subsystems, one or more storage subsystems, one or moretransfer subsystems, one or more loadlock subsystems, or one or morecleaning subsystems, or any combination thereof.
 18. The method of claim1, wherein the first S-D processing elements include at least one of oneor more coating processing elements, one or more etching processingelements, one or more thermal processing elements, one or more exposureprocessing elements, one or more oxidation processing elements, one ormore nitridation processing elements, one or more development processingelements, one or more lithography processing elements, one or morescanner-related processing elements, one or more measurement processingelements, one or more inspection processing elements, one or moreevaluation processing elements, one or more simulation processingelements, one or more prediction processing elements, one or more reworkprocessing elements, one or more storage processing elements, one ormore transfer processing elements, one or more loadlock processingelements, or one or more cleaning processing elements, or anycombination thereof.
 19. The method of claim 1, wherein the plurality ofwafers comprise at least on of semiconductor material, carbon material,dielectric material, glass material, ceramic material, metallicmaterial, oxidized material, mask material, or planarization material,or a combination thereof.
 20. A method of processing a plurality ofwafers comprising: receiving the plurality of wafers by a non-sitedependent transfer subsystem in a processing system, the processingsystem including Site-Dependent (S-D) and Non-S-D (N-S-D) subsystems,each wafer having wafer data associated therewith, wherein the waferdata includes S-D confidence data and/or N-S-D confidence data, whereinat least one wafer has one or more evaluation structures thereon;establishing a first set of S-D measurement wafers by using the usingthe S-D confidence data and/or N-S-D confidence data, each wafer in thefirst set of S-D measurement wafers having one or more evaluationstructures thereon, wherein the first set of S-D measurement wafers aretransferred from a N-S-D transfer subsystem to a S-D transfer subsystem;determining first S-D measurement procedures for the first set of S-Dmeasurement wafers, the first set of S-D measurement wafers beingmeasured in first S-D measurement subsystems using the first S-Dmeasurement procedures, wherein the wafer data is used to establish thefirst S-D measurement procedures; transferring the first set of S-Dmeasurement wafers to one or more first S-D measurement-related elementsin the first S-D subsystems using the S-D transfer subsystem, a firstS-D transfer sequence, a first S-D processing sequence, or the first S-Dmeasurement procedures, or any combination thereof being used todetermine the one or more first S-D measurement-related elements; andperforming the first S-D measurement procedures.
 21. The method of claim20, wherein the performing the first S-D measurement procedurescomprises: selecting a first measurement wafer from the first set of S-Dmeasurement wafers, the first measurement wafer having a first S-Devaluation feature thereon; obtaining first measurement data includingfirst S-D measured signal data from the first S-D feature; selectingfirst S-D best estimate signal data and an associated first S-D bestestimate structure from a library of S-D measurement signals andassociated structures; calculating first S-D differences between thefirst S-D measured signal data and the first S-D best estimate signaldata; establishing first S-D confidence data for the first measurementwafer using the first S-D differences; comparing the first S-Dconfidence data to first S-D product requirements; and eitheridentifying the first measurement wafer as a first high confidence waferand continuing the processing when one or more of the first S-D productrequirements are met, or applying a first corrective action when one ormore of the first S-D product requirements are not met.
 22. The methodof claim 21, further comprising: identifying the first S-D evaluationfeature using the first S-D best estimate structure and the associatedfirst S-D best estimate signal data when one or more of the first S-Dproduct requirements are met.
 23. The method of claim 21, wherein theapplying a first corrective action comprises: selecting new S-D bestestimate signal data and an associated new S-D best estimate structurefrom a library of S-D diffraction signals and associated structures;calculating new S-D differences between the first S-D measured signaldata and the new S-D best estimate signal data; establishing new S-Dconfidence data for the first measurement wafer using the new S-Ddifferences; comparing the new S-D confidence data to new S-D productrequirements; and either identifying the first measurement wafer as anew high confidence wafer and continuing the processing when one or moreof the new S-D product requirements are met, or stopping the selecting,the calculating, the establishing, the comparing, and the identifyingwhen one or more of the new S-D product requirements are not met. 24.The method of claim 23, further comprising: identifying the first S-Devaluation feature using the new S-D best estimate structure and theassociated new S-D best estimate signal data when first S-D profilelibrary creation criteria is met.
 25. The method of claim 21, whereinthe applying a first corrective action comprises: selecting a secondmeasurement wafer from the first set of S-D measurement wafers, thesecond measurement wafer having the first S-D evaluation featurethereon; obtaining second measurement data including second S-D measuredsignal data from the first S-D feature; selecting second S-D bestestimate signal data and an associated second S-D best estimatestructure from the library of S-D measurement data and associatedstructures or a library of S-D diffraction signals and associatedstructures; calculating second S-D differences between the second S-Dmeasured signal data and the second S-D best estimate signal data;establishing second S-D confidence data for the second measurement waferusing the second S-D differences; comparing the second S-D confidencedata to second S-D product requirements; and either identifying thesecond measurement wafer as a second high confidence wafer andcontinuing the processing when one or more of the second S-D productrequirements are met, or applying a second corrective action when one ormore of the second S-D product requirements are not met.
 26. The methodof claim 25, further comprising: identifying the first S-D evaluationfeature using the second S-D best estimate structure and the associatedsecond S-D best estimate signal data when one or more of the second S-Dproduct requirements are met.
 27. The method of claim 25, wherein theapplying a second corrective action comprises: selecting new second S-Dbest estimate signal data and an associated new second S-D best estimatestructure from the library of S-D measurement data and associatedstructures or the library of S-D diffraction signals and associatedstructures; calculating new second S-D differences between the secondS-D measured signal data and the new second S-D best estimate signaldata; establishing new second S-D confidence data for the secondmeasurement wafer using the new second S-D differences; comparing thenew second S-D confidence data to new second S-D product requirements;and either identifying the second measurement wafer as a new second highconfidence wafer and continuing the processing when one or more of thenew second S-D product requirements are met, or stopping the selecting,the calculating, the establishing, the comparing, and the identifyingwhen one or more of the new second S-D product requirements are not met.28. The method of claim 27, further comprising: identifying the firstS-D evaluation feature using the new second S-D best estimate structureand the associated new second S-D best estimate signal data when one ormore of the new second S-D product requirements are met.
 29. The methodof claim 27, wherein the applying a second corrective action comprisesre-measuring, re-inspecting, re-working, storing, cleaning, and/orstripping the first measurement wafer, the second measurement wafer, orthe first set of S-D measurement wafers, or any combination thereof. 30.The method of claim 21, wherein the applying a first corrective actioncomprises: selecting a second S-D evaluation feature on the firstmeasurement wafer; obtaining second measurement data including secondS-D measured signal data from the second S-D feature; selecting secondS-D best estimate signal data and an associated second S-D best estimatestructure from the library of S-D measurement data and associatedstructures; calculating second S-D differences between the second S-Dmeasured signal data and the second S-D best estimate signal data;establishing second S-D confidence data for the first measurement waferusing the second S-D differences; comparing the second S-D confidencedata to second S-D product requirements; and either identifying thefirst measurement wafer as a second high confidence wafer and continuingthe processing when one or more of the second S-D product requirementsare met, or applying a second corrective action when one or more of thesecond S-D product requirements are not met.
 31. The method of claim 21,wherein the applying a first corrective action comprises: selecting asecond measurement wafer having a second S-D evaluation feature thereon;obtaining second measurement data including second S-D measured signaldata from the second S-D feature; selecting second S-D best estimatesignal data and an associated second S-D best estimate structure fromthe library of S-D measurement data and associated structures;calculating second S-D differences between the second S-D measuredsignal data and the second S-D best estimate signal data; establishingsecond S-D confidence data for the second measurement wafer using thesecond S-D differences; comparing the second S-D confidence data tosecond S-D product requirements; and either identifying the second,measurement wafer as a second high confidence wafer and continuing theprocessing when one or more of the second S-D product requirements aremet, or applying a second corrective action when one or more of thesecond S-D product requirements are not met.
 32. The method of claim 21,wherein the applying a first corrective action comprises re-measuring,re-inspecting, re-working, storing, cleaning, and/or stripping the oneor more of the first set of S-D measurement wafers.
 33. The method ofclaim 21, wherein applying a first corrective action further comprises:establishing a first S-D calculated evaluation structure and associatedfirst S-D calculated signal data from a new profile space outside aprofile space associated with the library of S-D measurement signals andassociated structures or a library of S-D diffraction signals andassociated structures; determining first S-D calculated differencesbetween the first measured signal data and the first S-D calculatedsignal data; establishing first S-D calculated confidence data for thefirst measurement wafer using the first S-D calculated differences;comparing the first S-D calculated confidence data to first S-D profilelibrary creation criteria; and either identifying the first measurementwafer as a first calculated high confidence wafer and continuing theprocessing when one or more of the first S-D profile library creationcriteria are met, or applying a second corrective action when one ormore of the first S-D profile library creation criteria are not met. 34.The method of claim 33, further comprising: creating a new S-Dcalculated evaluation structure and associated new S-D calculated signaldata by changing at least one of a height, a width, a thickness, adepth, a volume, an area, an angle, a dielectric property, a processrecipe parameter, a processing time, a critical dimension, a spacing, aperiod, a position, or a line width, or a combination of two or morethereof; determining new S-D calculated differences between the firstmeasured signal data and the new S-D calculated signal data;establishing new S-D calculated confidence data for the firstmeasurement wafer using the new S-D calculated differences; comparingthe new S-D calculated confidence data to new S-D profile librarycreation criteria; and either identifying the first measurement wafer asa new calculated high confidence wafer and continuing the processingwhen one or more of the new S-D profile library creation criteria aremet, or stopping the creating, the determining, the establishing, thecomparing, and the identifying when one or more of the new S-D profilelibrary creation criteria are not met.
 35. The method of claim 33,further comprising: storing the first S-D calculated evaluationstructure and the associated first S-D calculated signal data in thelibrary of S-D measurement signals and associated structures or thelibrary of S-D diffraction signals when the first S-D profile librarycreation criteria are met.
 36. The method of claim 33, furthercomprising: identifying the first S-D evaluation feature using the S-Dfirst calculated evaluation structure and the associated firstcalculated signal data when the first S-D profile library creationcriteria is met.
 37. The method of claim 21, wherein applying a firstcorrective action further comprises: determining a first outside datapoint in a first S-D profile data space outside a data space associatedwith a S-D profile library, wherein first outside S-D signal data, orfirst outside S-D profile data, or first outside S-D profile parameterdata, or a combination thereof are associated with the first outsidedata point; calculating first outside S-D differences between the firstS-D measured signal data and the first outside S-D signal data;establishing first outside S-D confidence data for the first measurementwafer using the first outside S-D differences; comparing the firstoutside S-D confidence data to first outside S-D product requirements;and either identifying the first measurement wafer as an outside highconfidence wafer and continuing the processing when one or more of thefirst outside S-D product requirements are met, or applying a secondcorrective action when one or more of the first outside S-D productrequirements are not met.
 38. The method of claim 37, furthercomprising: identifying the first S-D evaluation feature using the dataassociated with the first outside data point when one or more of thefirst outside S-D product requirements are met.
 39. The method of claim21, wherein the continuing the processing comprises: comparing the firstS-D differences to first accuracy requirements; and either identifying afirst set of inspection wafers as first high confidence wafers andcontinuing the processing when one or more of a first accuracyrequirements are met, or applying additional corrective actions when oneor more of the first accuracy requirements are not met.
 40. The methodof claim 20, wherein the applying a second corrective action comprises:selecting a third S-D evaluation feature on the first measurement wafer;obtaining third measurement data including third S-D measured signaldata from the third S-D feature; selecting third S-D best estimatesignal data and an associated third S-D best estimate structure from alibrary of S-D measurement data and associated structures or a libraryof S-D diffraction signals and associated structures; calculating thirdS-D differences between the third S-D measured signal data and the thirdS-D best estimate signal data; establishing third S-D confidence datafor the first measurement wafer using the third S-D differences;comparing the third S-D confidence data to third S-D productrequirements; and either identifying the first measurement wafer as athird high confidence wafer and continuing the processing when one ormore of the third S-D product requirements are met, or stopping theselecting, the calculating, the establishing, the comparing, and theidentifying when one or more of the third S-D product requirements arenot met.
 41. The method of claim 22, wherein the applying a secondcorrective action comprises: selecting new second S-D best estimatesignal data and an associated new second S-D best estimate structurefrom the library of S-D measurement data and associated structures;calculating new second S-D differences between the second measuredsignal data and the new second S-D best estimate signal data;establishing new second S-D confidence data for the second measurementwafer using the new second S-D differences; comparing the new second S-Dconfidence data to new second S-D product requirements; and eitheridentifying the second measurement wafer as a new second high confidencewafer and continuing the processing when one or more of the new secondS-D product requirements are met, or stopping the selecting, thecalculating, the comparing, and the identifying when one or more of thenew second S-D product requirements are not met.